Patents by Inventor Hiro Nishi

Hiro Nishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of forming the same
    Patent number: 8487362
    Abstract: A semiconductor device includes a semiconductor substrate having first and second regions, a first pillar transistor, and a second pillar transistor, wherein the first pillar transistor comprises a first semiconductor pillar disposed in the first region, and a first gate electrode covering a side surface of the first semiconductor pillar, wherein the second pillar transistor comprises a second semiconductor pillar disposed in the second region, and a second gate electrode covering a side surface of the second semiconductor pillar, wherein the first gate electrode is different in height from the second gate electrode, and the first and second pillar transistors form a CMOS device.
    Type: Grant
    Filed: December 14, 2012
    Date of Patent: July 16, 2013
    Assignee: Elpida Memory, Inc.
    Inventors: Hiro Nishi, Eiichirou Kakehashi
  • Semiconductor device and method of forming the same
    Patent number: 8343832
    Abstract: A method of forming a semiconductor device includes the following processes. A first pillar and a second pillar are formed on a semiconductor substrate. A semiconductor film is formed which includes first and second portions. The first portion is disposed over a side surface of the first pillar. The second portion is disposed over a side surface of the second pillar. The first and second portions are different from each other in at least one of impurity conductivity type and impurity concentration. A part of the semiconductor film is removed by etching back. The first and second portions are etched at first and second etching rates that are different from each other.
    Type: Grant
    Filed: May 13, 2010
    Date of Patent: January 1, 2013
    Assignee: Elpida Memory, Inc.
    Inventors: Hiro Nishi, Eiichirou Kakehashi
  • Semiconductor device and method of forming the same
    Publication number: 20100291743
    Abstract: A method of forming a semiconductor device includes the following processes. A first pillar and a second pillar are formed on a semiconductor substrate. A semiconductor film is formed which includes first and second portions. The first portion is disposed over a side surface of the first pillar. The second portion is disposed over a side surface of the second pillar. The first and second portions are different from each other in at least one of impurity conductivity type and impurity concentration. A part of the semiconductor film is removed by etching back. The first and second portions are etched at first and second etching rates that are different from each other.
    Type: Application
    Filed: May 13, 2010
    Publication date: November 18, 2010
    Applicant: Elpida Memory, Inc.
    Inventors: Hiro Nishi, Eiichirou Kakehashi