Abstract: A space S into which a finger of an operator can be inserted is arranged under buttons 11, 12 as an input operating portion of a mouse M that is used as a pointing device for an information processing unit such as a personal computer in order to make it possible to operate the mouse naturally irrespective of a size of a hand.

Abstract: A mouse M that is used as a pointing device for an information processing unit such as a personal computer comprises a body 1 having at least buttons 11, 12 as an input operating portion, a traveling direction detecting portion 3 that locates at a bottom end portion and detects a direction of traveling and a hand placing portion 2 on which an operator can put his or her hand and is so arranged that the operator can move the mouse M with keeping the hand put on the hand placing portion 2 in order to prevent the hand from rubbing against a top plate of a desk due to an operation of the mouse M.

Abstract: Gas discharge is caused in a predetermined discharging gas at atmospheric pressure or a pressure close to atmospheric pressure, and an organic material which is liquid at room temperature and which is previously contained in the discharging gas or applied to a surface of a treated member is dissociated or excited by a plasma caused by the gas discharge to generate activated species. By using these excited activated species, a polymerized film of organic material is formed on the surface of the treated member. By variously selecting the organic material or the kind of the discharging material and variously combining them, a water repellent film, a hydrophilic film or a film having a high hardness can easily be formed on the surface of the treated member according to use, or the polymerization speed of the organic material can be increased, or the polymerization can be limited.

Abstract: A CMOS semiconductor device comprises a well and a MOSFET adjacent to the well, wherein the distance between the channel region of the MOSFET is larger than the distance between the well and any of the source and drain of the MOSFET. The larger distance between the channel region and the well provides less fluctuation of the threshold voltage of the MOSFET.

Abstract: For preventing a field effect transistor from driftage of the threshold voltage due to injection of hot carriers, there is disclosed a field effect transistor fabricated on a semiconductor substrate and comprising a thin dielectric film with two openings covering the major surface and having a portion serving as a gate insulating film, a gate electrode formed on the portion of the thin dielectric film and covered with an isolation film, first and second lightly doped impurity regions formed in the semiconductor substrate in spacing relationship from each other and having respective edge portions located below the two side portions of the gate electrode, respectively, side walls projecting from the isolation film covering the two side portions, respectively, and directly contacting the major surface through the two openings, respectively, and first and second heavily doped impurity regions formed in the semiconductor substrate partially overlapped with the first and second lightly doped impurity regions, respe