Abstract: Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus with which low-particle generation can be improved, as well as a semiconductor manufacturing apparatus including the same. A composite structure including a base material and a structure that is provided on the base material and has a surface, in which the structure comprises Y3Al5O12 as a main component, and has an indentation hardness being larger than 8.5 GPa features excellent low-particle generation and is suitably used as a member for a semiconductor apparatus.

Abstract: A laser machining apparatus that separates a workpiece into a machined product and a remnant material by cutting using irradiation with a laser beam includes: a nozzle that squirts gas at a machining point; a rotation mechanism that causes the nozzle or the workpiece to rotate about an optical axis; and a controller that performs control of the rotation mechanism. This control causes the nozzle, which squirts the gas at the machining point, to be at the machined product side during the cutting.

Abstract: A film forming method includes: repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas; and supplying a hydrazine-based compound gas as a part or all of the nitriding gas.

Abstract: A method of forming a group V metal nitride film on a substrate includes: providing the substrate within a processing container; and forming the group V metal nitride film on the substrate by alternately supplying, into the processing container, a raw material gas including a group V metal and a reducing gas including a nitrogen-containing gas.

Abstract: Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus as well as a semiconductor manufacturing apparatus. A composite structure including a base material and a structure that is provided on the base material and has a surface to be exposed to a plasma atmosphere, in which the structure has an yttrium-aluminum oxide as a main component, and has a lattice constant a calculated by the following formula (1) being larger than 12.080 ?: a=d·(h2+k2+l2)1/2??(1) where d represents a lattice plane spacing, and (hkl) represents a Miller index. This structure features excellent low-particle generation and is suitably used a member for a semiconductor apparatus.

Abstract: Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus with which low-particle generation can be improved, as well as a semiconductor manufacturing apparatus including the same. A composite structure including a base material and a structure that is provided on the base material and has a surface, in which the structure comprises Y3Al5O12 as a main component, and has an indentation hardness being larger than 8.5 GPa features excellent low-particle generation and is suitably used as a member for a semiconductor apparatus.

Abstract: A laser machining apparatus that separates a workpiece into a machined product and a remnant material by cutting using irradiation with a laser beam includes: a nozzle that squirts gas at a machining point; a rotation mechanism that causes the nozzle or the workpiece to rotate about an optical axis; and a controller that performs control of the rotation mechanism. This control causes the nozzle, which squirts the gas at the machining point, to be at the machined product side during the cutting.

Abstract: A step of constantly supplying first and second carrier gases into a processing container having a substrate therein through first and second carrier gas flow paths, respectively, and supplying a source gas into the processing container through a source gas flow path, a step of purging the source gas by supplying a purge gas into the processing container through a purge gas flow path provided separately from the carrier gas, a step of supplying a reactant gas into the processing container through a reactant gas flow path, and a step of purging the reactant gas by supplying a purge gas into the processing container through the purge gas flow path are performed in a predetermined cycle. An additive gas having a predetermined function is supplied as at least a part of the purge gas in at least one of the purging steps.

Abstract: Disclosed is provision of a ceramic coat having an excellent low-particle generation as well as a method for assessing the low-particle generation of the ceramic coat. A composite structure including a substrate and a structure which is formed on the substrate and has a surface, wherein the structure includes a polycrystalline ceramic and the composite structure has luminance Sa satisfying a specific value calculated from a TEM image analysis thereof, can be suitably used as an inner member of a semiconductor manufacturing apparatus required to have a low-particle generation.

Abstract: A structure includes a polycrystalline substance of yttrium fluoride, wherein an average crystallite size in the polycrystalline substance is less than 100 nanometers. When taking a peak intensity detected near diffraction angle 2?=24.3° by X-ray diffraction as ?, and taking a peak intensity detected near diffraction angle 2?=25.7° as ?, a peak intensity ratio ?/? of the structure is not less than 0% and less than 100%.

Abstract: A method of forming a TiSiN film having a desired film characteristic includes: forming a TiN film by executing an operation of supplying, into a process container in which a substrate is accommodated, a Ti-containing gas and a nitrogen-containing gas in this order a number of times X, X being an integer of 1 or more; and forming a SiN film by executing an operation of supplying, into the process container, a Si-containing gas and a nitrogen-containing gas in this order a number of times Y, Y being an integer of 1 or more, wherein forming a TiN film and forming a SiN film are executed in this order a number of times Z, Z being an integer of 1 or more, and wherein, in forming a SiN film, a flow rate of the Si-containing gas is controlled to be a flow rate determined according to the desired film characteristic.

Abstract: A film forming method includes: repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas; and supplying a hydrazine-based compound gas as a part or all of the nitriding gas.

Abstract: Disclosed is provision of a ceramic coat having an excellent low-particle generation as well as a method for assessing the low-particle generation of the ceramic coat. A composite structure including a substrate and a structure which is formed on the substrate and has a surface, wherein the structure includes a polycrystalline ceramic and the composite structure has luminance Sa satisfying a specific value calculated from a TEM image analysis thereof, can be suitably used as an inner member of a semiconductor manufacturing apparatus required to have a low-particle generation.

Abstract: There is provided a substrate mounting method of bringing a substrate close to a mounting table to mount the substrate on the mounting table by reducing a protrusion amount of a plurality of projections configured to protrude from a substrate-mounting surface of the mounting table and to support the substrate, the protrusion amount being defined to protrude from the substrate-mounting surface. The method includes: after at least a portion of the substrate is brought into contact with the substrate-mounting surface, halting an operation of bringing the substrate close to the mounting table; and after the halting the operation of bringing the substrate close to the mounting table, resuming the operation of bringing the substrate close to the mounting table.

Abstract: A structure includes a polycrystalline substance of yttrium fluoride, wherein an average crystallite size in the polycrystalline substance is less than 100 nanometers. When taking a peak intensity detected near diffraction angle 2?=24.3° by X-ray diffraction as ?, and taking a peak intensity detected near diffraction angle 2?=25.7° as ?, a peak intensity ratio ?/? of the structure is not less than 0% and less than 100%.

Abstract: According to one embodiment, a structure includes a polycrystalline substance of yttrium oxyfluoride as a main component. The yttrium oxyfluoride has a rhombohedral crystal structure, and an average crystallite size of the polycrystalline substance is less than 100 nanometers. When taking a peak intensity of rhombohedron detected near diffraction angle 2?=13.8° by X-ray diffraction as r1, taking a peak intensity of rhombohedron detected near diffraction angle 2?=36.1° as r2, and taking a proportion ?1 as ?1(%)=r2/r1×100, the proportion ?1 is not less than 0% and less than 100%.

Abstract: A step of constantly supplying first and second carrier gases into a processing container having a substrate therein through first and second carrier gas flow paths, respectively, and supplying a source gas into the processing container through a source gas flow path, a step of purging the source gas by supplying a purge gas into the processing container through a purge gas flow path provided separately from the carrier gas, a step of supplying a reactant gas into the processing container through a reactant gas flow path, and a step of purging the reactant gas by supplying a purge gas into the processing container through the purge gas flow path are performed in a predetermined cycle. An additive gas having a predetermined function is supplied as at least a part of the purge gas in at least one of the purging steps.

Abstract: According to one embodiment, a structure includes a polycrystalline substance of yttrium oxyfluoride as a main component. The yttrium oxyfluoride has an orthorhombic crystal structure, and an average crystallite size of the polycrystalline substance is less than 100 nanometers. When taking a peak intensity detected near diffraction angle 2?=32.0° by X-ray diffraction as ?, and taking a peak intensity detected near diffraction angle 2?=32.8° as ?, a peak intensity ratio ?/? is not less than 0% and not more than 150%.

Abstract: According to one embodiment, a structure includes a polycrystalline substance of yttrium oxyfluoride as a main component. The yttrium oxyfluoride has a rhombohedral crystal structure, and an average crystallite size of the polycrystalline substance is less than 100 nanometers. When taking a peak intensity of rhombohedron detected near diffraction angle 2?=13.8° by X-ray diffraction as r1, taking a peak intensity of rhombohedron detected near diffraction angle 2?=36.1° as r2, and taking a proportion ?1 as ?1(%)=r2/r1×100, the proportion ?1 is not less than 0% and less than 100%.

Abstract: According to one embodiment, a structure includes a polycrystalline substance of yttrium oxyfluoride as a main component. The yttrium oxyfluoride has an orthorhombic crystal structure, and an average crystallite size of the polycrystalline substance is less than 100 nanometers. When taking a peak intensity detected near diffraction angle 2?=32.0° by X-ray diffraction as ?, and taking a peak intensity detected near diffraction angle 2?=32.8° as ?, a peak intensity ratio ?/? is not less than 0% and not more than 150%.