Abstract: Provided an electrophotographic electro-conductive member that can stably suppress an occurrence of fogging in an electrophotographic image. The member comprises a support having an electro-conductive outer surface, and an electro-conductive layer on the outer surface of the support, the electro-conductive layer having a matrix including a cross-linked product of a first rubber, and domains dispersed in the matrix, the domains each includes a cross-linked product of a second rubber and an electro-conductive particle, at least some of the domains is exposed to the outer surface of the electro-conductive member to constitute protrusions on an outer surface of the member, the outer surface of the electro-conductive member is constituted by the matrix and the domains exposed to the outer surface of the electrophotographic electro-conductive member, the electrophotographic electro-conductive member has an impedance of 1.0×103? or more and 1.0×108? or less, and some of the domains satisfy two specific requirements.

Abstract: An active matrix substrate includes a first TFT disposed in each of pixel regions, a first flattened layer covering the first TFT, and a pixel electrode provided on the first flattened layer. The first TFT includes a lower gate electrode, a lower gate insulating layer, an oxide semiconductor layer, an upper gate insulating layer, and an upper gate electrode. The active matrix substrate further includes a first connection electrode for electrically connecting a drain contact region of the oxide semiconductor layer and the pixel electrode. The first flattened layer includes a pixel contact hole formed so as to expose a part of the first connection electrode. The bottom face of the pixel contact hole at least partially overlaps, of a lower gate metal layer including a lower gate electrode and an upper gate metal layer including an upper gate electrode, at least the lower gate metal layer when viewed from the normal direction of the substrate.

Abstract: An endless belt, in which an outer peripheral surface of the endless belt has a coefficient of dynamic friction of 0.85 or less, and in a case where polyester resin particles having a volume-average particle size of 4.7 ?m are caused to adhere to the outer peripheral surface under a load of 0 g/cm2, and then air is sprayed on the outer peripheral surface from above the outer peripheral surface at a spray pressure that keeps increasing, all the polyester resin particles having adhered to the outer peripheral surface are spaced apart from the outer peripheral surface at the spray pressure of 6 kPa or less.

Abstract: An endless belt includes a resin and conductive particles, in which a content of the conductive particles with respect to the endless belt is 5% by volume or more and 20% by volume or less in terms of a volume ratio, a Young's modulus of the endless belt is 3,000 MPa or more, and the number of times of bending endurance of the endless belt measured by an MIT test specified in JIS P8115:2001 is 10,000 or more.

Abstract: One conductor region of a crystalline silicon semiconductor layer in a first transistor is electrically connected to one conductor region of an oxide semiconductor layer in a second transistor through a first contact hole and a second contact hole communicating with each other.

Abstract: An active matrix substrate includes: a thin film transistor located in each pixel region; and a pixel electrode electrically coupled with the thin film transistor. The thin film transistor includes a lower gate electrode, a lower gate insulating layer, an oxide semiconductor layer, an upper gate insulating layer, and an upper gate electrode. The width of an upper gate line electrically coupled with the upper gate electrode is greater than the width of a lower gate line electrically coupled with the lower gate electrode.

Abstract: A display device includes a pixel circuit and a light-emitting element, the pixel circuit including: a transistor with a first structure including a crystalline silicon semiconductor film and a first gate electrode; and a transistor with a second structure including an oxide semiconductor film and a second gate electrode, the display device further includes: a first interlayer insulation film; and a second interlayer insulation film, wherein the pixel circuit includes: a drive transistor that has the first structure: and a capacitive element, the capacitive element includes: a first capacitor electrode electrically connected to a first gate electrode of the drive transistor; a second capacitor electrode opposite the first capacitor electrode; and a dielectric film between the first capacitor electrode and the second capacitor electrode, and the dielectric film is disposed in a different layer than are the first interlayer insulation film and the second interlayer insulation film.

Abstract: An active matrix substrate includes a substrate, a pixel TFT that is supported by the substrate, provided corresponding to each of a plurality of pixel areas, and includes an oxide semiconductor layer, an organic insulating layer disposed above at least the oxide semiconductor layer of the pixel TFT, and an inorganic insulating layer disposed in contact with an upper surface of the organic insulating layer on the organic insulating layer. The organic insulating layer and the inorganic insulating layer are provided with a plurality of dual-layer hole structure portions, each of the dual-layer hole structure portions includes a through-hole provided in the inorganic insulating layer and a bottomed hole provided in the organic insulating layer and positioned below the through-hole, and the through-hole is positioned on an inner side of an outer edge of the bottomed hole when viewed from a normal direction of the substrate.

Abstract: An active matrix substrate includes a first TFT disposed in each of pixel regions, a first flattened layer covering the first TFT, and a pixel electrode provided on the first flattened layer. The first TFT includes a lower gate electrode, a lower gate insulating layer, an oxide semiconductor layer, an upper gate insulating layer, and an upper gate electrode. The active matrix substrate further includes a first connection electrode for electrically connecting a drain contact region of the oxide semiconductor layer and the pixel electrode. The first flattened layer includes a pixel contact hole formed so as to expose a part of the first connection electrode. The bottom face of the pixel contact hole at least partially overlaps, of a lower gate metal layer including a lower gate electrode and an upper gate metal layer including an upper gate electrode, at least the lower gate metal layer when viewed from the normal direction of the substrate.

Abstract: An oxide semiconductor layer includes a second channel region and a second conductor region. The lower metal layer includes a contact wire in contact with the second conductor region. The upper metal layer includes an upper wire. A second interlayer insulating film is provided with a second contact hole overlapping an upper wire and the contact wire. The second conductor region and the upper wire electrically connect together through the contact wire.

Abstract: A crystalline silicon semiconductor layer includes a first channel region and a second conductor region. An oxide semiconductor layer includes a second channel region and a second conductor region. An lower metal layer includes a lower wire. The lower wire is in contact with a first conductor region in a first contact hole. The first conductor region and the second conductor region are electrically connected together through the lower wire.

Abstract: One conductor region of a crystalline silicon semiconductor layer in a first transistor is electrically connected to one conductor region of an oxide semiconductor layer in a second transistor through a first contact hole and a second contact hole communicating with each other.

Abstract: Provided are an active matrix substrate having a reduced driving voltage and excellent adhesion between a dielectric layer and a water-repellent layer and a microfluidic device including the substrate. The active matrix substrate includes an array electrode, a dielectric layer covering the array electrode, and a first water-repellent layer in this order on a first substrate. The dielectric layer includes a silicon nitride film located on the side in contact with the first water-repellent layer, and the silicon nitride film has a surface layer region containing oxygen in the surface on the side in contact with the first water-repellent layer.

Abstract: An active matrix substrate includes: a first substrate; and first electrodes, a dielectric layer covering the first electrodes, and a first water-repelling layer in this sequence on the first substrate, wherein the dielectric layer has a multilayer structure including two or more layers and includes a silicon nitride film and a metal-oxide film between the silicon nitride film and the first water-repelling layer, and the silicon nitride film has an oxygen-containing surface layer region on a surface thereof that is in contact with the metal-oxide film.

Abstract: Provided are an active matrix substrate having a reduced driving voltage and excellent adhesion between a dielectric layer and a water-repellent layer and a microfluidic device including the substrate. The active matrix substrate includes an array electrode, a dielectric layer covering the array electrode, and a first water-repellent layer in this order on a first substrate. The dielectric layer includes a silicon nitride film located on the side in contact with the first water-repellent layer, and the silicon nitride film has a surface layer region containing oxygen in the surface on the side in contact with the first water-repellent layer.

Abstract: In order to identify fluorescent X-rays and diffracted X-rays in a software without changing a configuration of an X-ray fluorescence analysis apparatus and to display fluorescent X-ray information and diffracted X-ray information on peaks in a spectrum, the X-ray fluorescence analysis apparatus having an X-ray tube that emits X-rays to a sample and a detector that detects X-rays from the sample and generating and displaying a spectrum indicating a relationship between X-ray energy and an element content based on the X-rays detected by the detector, includes: an identification information generation unit that generates identification information specifying a peak position by a diffracted X-ray caused by a crystal structure of the sample; and a display control unit that displays the diffracted X-ray information on a peak in the spectrum based on the identification information.

Abstract: An active matrix substrate includes a demultiplexer circuit which includes multiple TFTs. Each TFT includes a gate electrode, an oxide semiconductor layer that includes a source contact area, a drain contact area, and an area between a source and a drain that includes a channel region, a channel protection layer that covers only a portion of the area between the source and the drain, a source electrode that is brought into contact with the source contact area, and a drain electrode that is brought into contact with the drain contact area. At a cross-section in a channel length direction, of each TFT, an end portion facing toward the channel region, of one of the source and drain electrodes is brought into contact with the channel protection layer, and an end portion facing toward the channel region, of the other is positioned at a distance away from the channel protection layer.

Abstract: An active matrix substrate includes: a first substrate; and first electrodes, a dielectric layer covering the first electrodes, and a first water-repelling layer in this sequence on the first substrate, wherein the dielectric layer has a multilayer structure including two or more layers and includes a silicon nitride film and a metal-oxide film between the silicon nitride film and the first water-repelling layer, and the silicon nitride film has an oxygen-containing surface layer region on a surface thereof that is in contact with the metal-oxide film.

Abstract: A method of producing an element substrate includes (A) a process of forming a transparent electrode film containing a transparent metal oxide on an upper side of an insulating film located above a conductive film, (B) a process of forming a photoresist film on an upper side of the transparent electrode film and patterning the photoresist film, (C) a process of removing a portion of the transparent electrode film not covered by the photoresist film to form an opening H extending through the transparent electrode film, and (D) a process of removing a portion of the insulating film not covered by the photoresist film and the transparent electrode film to form a contact hole extending to the conductive film. The element substrate produced by the method includes an electrode including the transparent electrode film electrically connected to the conductive film at the contact hole.

Abstract: A resin discriminating apparatus includes an X-ray tube which emits X-rays, an X-ray detector which detects X-rays emitted from a sample irradiated with X-rays, a data processing section which creates a spectrum on the basis of a detection signal obtained by the X-ray detector, a peak extraction section which extracts a spectral line due to Compton scattering and a spectral line due to Rayleigh scattering derived from a target element of the X-ray tube on the spectrum, and obtains a peak intensity, and a discrimination section which calculates a scattering intensity ratio which is a ratio of the Rayleigh scattering intensity to the Compton scattering intensity and discriminates the type of resin contained in the sample from the scattering intensity ratio.