Abstract: In a process of dividing gates of multi-layered films in fabricating a NAND flash memory having a three-dimensional structure, a pattern is prevented from deforming and falling. A ratio of a length L to a height h of control gate groups configuring a memory cell of the flash memory is set to be less than 1.65 which is a range in which buckling does not occur. It is desirable that a ratio of a length L to a width W of the control gate groups is set to be less than 16.5.

Abstract: The present invention provides a plasma processing method in which sideetching and microloading can be suppressed in a plasma processing method of forming trenches with a mask having a minimum opening width of 20 nm or less. The plasma processing method of the present invention is characterized by including the steps of forming trenches by plasma etching, forming a nitride film on sidewalls of trenches using plasma, and forming an oxide film on sidewalls and bottom surfaces of the trenches using plasma.

Abstract: In a process of dividing gates of multi-layered films in fabricating a NAND flash memory having a three-dimensional structure, a pattern is prevented from deforming and falling. A ratio of a length L to a height h of control gate groups configuring a memory cell of the flash memory is set to be less than 1.65 which is a range in which buckling does not occur. It is desirable that a ratio of a length L to a width W of the control gate groups is set to be less than 16.5.

Abstract: The present invention provides a plasma etching method with an EUV-exposed resist capable of preventing variations of device feature dimensions. The plasma etching method of the present invention is to plasma-etch a target material with a multilayer resist that serves as a mask and composed of an EUV-exposed resist, an antireflective coating, an inorganic film and an organic film. The plasma etching method includes a first step of depositing a deposition film on a surface of the EUV-exposed resist before the antireflective coating is etched, a second step of etching the deposition film deposited on the antireflective coating and the antireflective coating with a gas mixture of Cl2 gas, HBr gas and N2 gas after the first step, a third step of etching the inorganic film after the second step, and a fourth step of etching the organic film after the third step.

Abstract: In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.

Abstract: The present invention provides a plasma processing method in which sideetching and microloading can be suppressed in a plasma processing method of forming trenches with a mask having a minimum opening width of 20 nm or less. The plasma processing method of the present invention is characterized by including the steps of forming trenches by plasma etching, forming a nitride film on sidewalls of trenches using plasma, and forming an oxide film on sidewalls and bottom surfaces of the trenches using plasma.

Abstract: The invention provides a dry etching method capable of obtaining a good profile with little side etch without receiving the restriction of a micro loading effect. A dry etching method for etching a sample having formed on the surface thereof a pattern with an isolated portion and a dense portion using plasma comprises a first etching step using an etching gas containing a CF-based gas and a nitrogen gas in which an etching rate of a dense portion of the pattern is greater than the etching rate of the isolated portion of the mask pattern, and a second etching step in which the etching rate of the isolated portion of the pattern is greater than the etching rate of the dense portion of the pattern.

Abstract: In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.

Abstract: The invention provides a dry etching method capable of obtaining a good profile with little side etch without receiving the restriction of a micro loading effect. A dry etching method for etching a sample having formed on the surface thereof a pattern with an isolated portion and a dense portion using plasma comprises a first etching step using an etching gas containing a CF-based gas and a nitrogen gas in which an etching rate of a dense portion of the pattern is greater than the etching rate of the isolated portion of the mask pattern, and a second etching step in which the etching rate of the isolated portion of the pattern is greater than the etching rate of the dense portion of the pattern.

Abstract: In a plasma processing apparatus using electrostatic chuck, increase of plasma potential is prevented and abnormal discharge is avoided. The plasma processing apparatus comprises an RF source for generating plasma in a vacuum container, another RF source for applying an RF bias power to a sample, a sample stage having an electrostatic chuck electrode, a DC power supply for applying an electrostatic chuck voltage to the electrode, and a controller for shifting the electrostatic chuck voltage to negative by a potential difference of quarter to half of peak-to-peak voltage of the RF bias power for suppressing increase of plasma potential.

Abstract: A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

Abstract: In a plasma processing apparatus using electrostatic chuck, increase of plasma potential is prevented and abnormal discharge is avoided. The plasma processing apparatus comprises an RF source for generating plasma in a vacuum container, another RF source for applying an RF bias power to a sample, a sample stage having an electrostatic chuck electrode, a DC power supply for applying an electrostatic chuck voltage to the electrode, and a controller for shifting the electrostatic chuck voltage to negative by a potential difference of quarter to half of peak-to-peak voltage of the RF bias power for suppressing increase of plasma potential.

Abstract: A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

Abstract: A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

Abstract: A method for manufacturing a semiconductor device comprises etching a semiconductor substrate having an insulation film as mask using a mixed gas composed of HBr and CHF3, thereby having a reaction product composed of the semiconductor substrate and reaction gas to be adhered gradually on the side walls of the mask, and as a result creating a trench having a sufficient roundness formed to the upper end portion thereof.

Abstract: A method for manufacturing a semiconductor device comprises etching a semiconductor substrate having an insulation film as mask using a mixed gas composed of HBr and CHF3, thereby having a reaction product composed of the semiconductor substrate and reaction gas to be adhered gradually on the side walls of the mask, and as a result creating a trench having a sufficient roundness formed to the upper end portion thereof.

Abstract: A method for manufacturing a semiconductor device comprises etching a semiconductor substrate having an insulation film as mask using a mixed gas composed of HBr and CHF3, thereby having a reaction product composed of the semiconductor substrate and reaction gas to be adhered gradually on the side walls of the mask, and as a result creating a trench having a sufficient roundness formed to the upper end portion thereof.

Abstract: A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

Abstract: A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.