Abstract: A solid electrolytic capacitor includes a capacitor element having an anode portion, a dielectric film and a cathode portion, an anode lead frame, a cathode lead frame, and a molded resin for covering at least a part of the anode and cathode lead frames and the capacitor element. In a cathode lead frame opposed portion opposed to the capacitor element with a conductive adhesive material being interposed is provided with a through hole having a narrowed portion smaller in diameter than other portions between a capacitor-element-side opening portion and a molded-resin-side opening portion, and the conductive adhesive material is formed in the through hole.

Abstract: A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.

Abstract: An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

Abstract: An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

Abstract: An optical waveguide in which a groove is formed on the top surface of a substrate used as a lower clad and a core is formed in the groove, characterized in that the core is formed in such a way that the top face of the core within the groove is at a lower level than the top face of the substrate, and an upper clad may also be provided on the core, and the core is preferably formed from an organic-inorganic hybrid material.

Abstract: A solid electrolytic capacitor includes a capacitor element having an anode portion, a dielectric film and a cathode portion, an anode lead frame, a cathode lead frame, and a molded resin for covering at least a part of the anode and cathode lead frames and the capacitor element. In a cathode lead frame opposed portion opposed to the capacitor element with a conductive adhesive material being interposed is provided with a through hole having a narrowed portion smaller in diameter than other portions between a capacitor-element-side opening portion and a molded-resin-side opening portion, and the conductive adhesive material is formed in the through hole.

Abstract: Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.

Abstract: A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.

Abstract: A solid electrolytic capacitor includes a capacitor element having a niobium oxide layer arranged between an anode and a cathode, and an outer package covering the capacitor element. The niobium oxide layer contains fluorine and phosphorus, and the outer package contains epoxy resin, phenol resin, filler and an imidazole compound.

Abstract: A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.

Abstract: In the optical waveguide which comprises a core layer to be an optical transmission region and an upper clad layer and a lower clad layer covering the surrounding of the core layer and of which the upper clad layer is formed while being shrunk in the volume, a stress moderating layer formed a material with a smaller storage modulus than that of the upper clad layer is formed between the upper clad layer and the lower clad layer in at least a portion of a region where the upper clad layer and the lower clad layer are brought into contact with each other.

Abstract: An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

Abstract: An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

Abstract: A capacitor element comprises an anode, a dielectric layer formed on the anode, an electrolyte layer formed on the dielectric layer, and a cathode formed on the electrolyte layer. On the cathode formed by the surface of the capacitor element, a conductive adhesive layer containing silver particles and an organic silane layer made from aminopropyltriethoxysilane (APTES) are sequentially formed, and the cathode and a cathode terminal are connected through the conductive adhesive layer and the organic silane layer. In addition, an anode terminal is connected to an anode lead which exposed from the anode by welding.

Abstract: Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.

Abstract: The present invention provides an electrolytic capacitor having a large electrostatic capacity. In the solid electrolytic capacitor, a capacitor element provided with; an anode in which a part of an anode lead is embedded in the inside of an outer package made of an epoxy resin or the like; an oxide layer containing niobium oxide formed on the anode; and a cathode formed on the oxide layer; is embedded. The anode lead is composed of a niobium alloy containing at least one of vanadium and zirconium, and its one end is embedded in the anode composed of a porous sintered body of metal particles containing niobium, and the other end is connected to an anode terminal. The cathode is composed of a conductive polymer layer such as polypyrrole, a first conductive layer containing carbon particles, and a second conductive layer containing silver particles, and one end of a cathode terminal is connected to the cathode via a third conductive layer containing silver particles.

Abstract: Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.

Abstract: A solid electrolytic capacitor includes a capacitor element having a niobium oxide layer arranged between an anode and a cathode, and an outer package covering the capacitor element. The niobium oxide layer contains fluorine and phosphorus, and the outer package contains epoxy resin, phenol resin, filler and an imidazole compound.

Abstract: A capacitor element comprises an anode, a dielectric layer formed on the anode, an electrolyte layer formed on the dielectric layer, and a cathode formed on the electrolyte layer. On the cathode formed by the surface of the capacitor element, a conductive adhesive layer containing silver particles and an organic silane layer made from aminopropyltriethoxysilane (APTES) are sequentially formed, and the cathode and a cathode terminal are connected through the conductive adhesive layer and the organic silane layer. In addition, an anode terminal is connected to an anode lead which exposed from the anode by welding.

Abstract: An optical device includes a substrate, a core provided on the substrate, a first clad and a second clad formed around the core. The optical device further includes a light absorber layer, provided on the substrate, which absorbs light leaked from the core. The light absorber layer is formed of, for instance, the same material as that constituting the core.