Abstract: A semiconductor device includes a polycrystalline silicon part buried in a termination region of a silicon layer. The polycrystalline silicon part contacts the silicon layer, has a higher crystal grain density than the silicon layer, and includes a heavy metal. The silicon layer includes a drift layer located in a cell region and the termination region. The drift layer has a lower first-conductivity-type impurity concentration than a silicon substrate. The drift layer includes a same element of heavy metal as the heavy metal included in the polycrystalline silicon part.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, first to fourth semiconductor regions, a gate electrode, and a second electrode. The third semiconductor region is located on a portion of the second semiconductor region. The fourth semiconductor region includes a first portion positioned on the third semiconductor region and a second portion arranged with the first portion in a second direction. A first-conductivity-type impurity concentration of the first portion is less than a first-conductivity-type impurity concentration of the second portion. The gate electrode faces the second semiconductor region via a gate insulating layer in the second direction. The second electrode is located on the second and fourth semiconductor regions. The second electrode contacts the first and second portions. The second electrode includes a connection part that contacts the third semiconductor region and the portion of the second semiconductor region in the second direction.

Abstract: A semiconductor device according to the present embodiment includes a drain electrode, a source electrode, a semiconductor region disposed between the drain electrode and the source electrode, a gate electrode disposed in the semiconductor region via a first insulation film, and a second insulation film disposed between the gate electrode and the source electrode and having a specific dielectric constant higher than a specific dielectric constant of the first insulation film.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first region, a second region, a third region, a first conductive portion, a second conductive portion, a gate electrode, a first insulating portion, a second insulating portion, a third insulating portion, and a fourth insulating portion. The second electrode has a first portion and a second portion extending from the first portion toward the first electrode. The first region is between the first electrode and the second electrode. The second region is between the first region and the second electrode. The third region is between the second semiconductor region and the second electrode. The first conductive portion is in the first semiconductor region. The gate electrode is between the second region and the second portion. The second conductive portion is between the first conductive portion and the gate electrode.

Abstract: A semiconductor device according to the present embodiment includes: a first electrode; a first semiconductor region of a first conductivity type disposed above the first electrode; a second semiconductor region of a second conductivity type disposed on the first semiconductor region; a third semiconductor region of the first conductivity type disposed on the second semiconductor region; a second electrode disposed in the first semiconductor region; a third electrode facing the second semiconductor region via a second insulating film; a fourth electrode having a portion adjacent to a part of the second semiconductor region and the third semiconductor region in the second direction, the second semiconductor region, and the third semiconductor region; and a fifth electrode disposed in the first insulating film, having a bottom located closer to the first electrode than a bottom of the portion, having a top located on an upper surface of the first insulating film.

Abstract: A semiconductor device includes a first electrode, a second electrode located on the first electrode, a semiconductor part located between the first electrode and the second electrode, a first interconnect located between the semiconductor part and the second electrode, a third electrode located in the semiconductor part and separated from the semiconductor part, a fourth electrode located lower than the third electrode in the semiconductor part, a first plug connecting the second electrode to the fourth electrode, and a second plug. The third electrode includes a ring portion, and an extension portion extending from the ring portion into an interior of the ring portion. The fourth electrode is located in the interior of the ring portion in a plane perpendicular to a vertical direction. The fourth electrode is separated from the semiconductor part. The second plug connects the first interconnect to the extension portion.

Abstract: A semiconductor device of embodiments includes a first electrode, a second electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a conductive portion, a first insulating portion, a gate electrode, a second insulating portion, and a third insulating portion. The first to third semiconductor regions are provided between the first electrode and the second electrode. The conductive portion includes a first conductive portion and a second conductive portion on the second electrode side and having a lower impurity concentration than the first conductive portion. The first insulating portion is provided between the first conductive portion and the first semiconductor region. The gate electrode is provided between the second semiconductor region and the second conductive portion. The second insulating portion is provided between the second conductive portion and the gate electrode.

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, first to third semiconductor regions, first and second conductive parts, first and second gate electrodes, and a first connection part. The first semiconductor region is located on the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on a portion of the second semiconductor region. The first conductive part is located in the first semiconductor region with a first insulating part interposed. The first gate electrode is located in the first insulating part. The second conductive part is located in the first semiconductor region with a second insulating part interposed. The second gate electrode is located in the second insulating part. The first connection part is located higher than the second and third semiconductor regions. The second electrode is located on the second and third semiconductor regions.

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, first to third semiconductor regions, a conductive body, and a gate electrode. The first semiconductor region is located on the first electrode and electrically connected with the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on a portion of the second semiconductor region. The conductive body is located in the first semiconductor region with an insulating part interposed. A lower surface of the conductive body includes first and second surfaces. The gate electrode is located in the insulating part. The gate electrode faces the second semiconductor region via a gate insulating layer. The second electrode is located on the second and third semiconductor regions. The second electrode is electrically connected with the second and third semiconductor regions.

Abstract: A semiconductor device includes a semiconductor part, an first electrode, a control electrode and second electrodes. The control electrode and the second electrodes are provided between the semiconductor part and the first electrode, and provided inside trenches, respectively. The second electrodes include first to third ones. The first and second ones of the second electrodes are adjacent to each other with a portion of the semiconductor part interposed. The second electrodes each are electrically isolated from the semiconductor part by a insulating film including first and second insulating portions adjacent to each other. The first insulating portion has a first thickness. The second insulating portion has a second thickness thinner than the first thickness. The first insulating portion is provided between the first and second ones of the second electrodes. The second insulating portion is provided between the first and third ones of the second electrodes.

Abstract: A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; a control electrode provided inside a trench of the semiconductor part; a third electrode provided inside the trench; a diode element provided at the front surface of the semiconductor part; a resistance element provided on the front surface of the semiconductor part via an insulating film, the diode element being electrically connected to the second electrode; a first interconnect electrically connecting the diode element and the resistance element, the first interconnect being electrically connected to the third electrode; and a second interconnect electrically connecting the resistance element and the semiconductor part. The resistance element is connected in series to the diode element. The diode element is provided to have a rectifying property reverse to a current direction flowing from the resistance element to the second electrode.

Abstract: A semiconductor device includes: a first semiconductor layer of first conductivity type; a second semiconductor layer of first conductivity type provided on the first semiconductor layer; a first semiconductor region of second conductivity type provided on the second semiconductor layer; a second semiconductor region of first conductivity type provided on the first semiconductor region; a first electrode provided in a first trench, the first trench reaching the second semiconductor layer from above the first semiconductor region, the first electrode facing the first semiconductor region via a first insulating film; a second electrode provided in a second trench, the second trench reaching the second semiconductor layer from above the first semiconductor region, the second electrode facing the first semiconductor region via a second insulating film; a third electrode including a first electrode portion, a second electrode portion provided on the first electrode portion and a third electrode portion provided on

Abstract: A semiconductor device includes first and second electrodes; a semiconductor part between the first and second electrodes; a control electrode and a third electrode in a trench between the semiconductor part and the second electrode. The device further includes a first insulating part insulating the control electrode from the semiconductor part; a second insulating part insulating the third electrode from the semiconductor part; and a third insulating part insulating the third electrode from the control electrode. The second insulating part includes first and second insulating films and a portion of a third insulating film. The first insulating film is provided between the semiconductor part and the third electrode. The second insulating film is provided between the first insulating film and the third electrode. The third insulating film includes the portion between the first insulating film and the second insulating film, and another portion inside the third insulating part.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first conductive member, a connecting member, a first member, and an insulating member. The semiconductor member includes first to third semiconductor regions. The first semiconductor region is between the first electrode and the third semiconductor region. The first semiconductor region includes first to third partial regions. The second semiconductor region is between the first and third semiconductor regions. The second semiconductor region includes third and fourth semiconductor portions. The third semiconductor region includes first and second semiconductor portions. The second electrode is electrically connected with the third semiconductor region. The third electrode includes a first electrode portion. The first conductive member includes first to third conductive regions. The connecting member is electrically connected with the first conductive member.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, first, second, and third semiconductor regions, an insulating portion, a conductive portion, a gate electrode, and a second electrode. The first semiconductor region is provided on the first electrode and electrically connected to the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The insulating portion are arranged with a portion of the first semiconductor region, and the second and third semiconductor regions. The conductive portion is provided inside the insulating portion and arranged with the first semiconductor region. The gate electrode is provided inside the insulating portion and arranged with the second semiconductor region. The second electrode is provided on the third semiconductor region and electrically connected to the third semiconductor region.

Abstract: A semiconductor device includes: a first semiconductor layer of first conductivity type; a second semiconductor layer of first conductivity type provided on the first semiconductor layer; a first semiconductor region of second conductivity type provided on the second semiconductor layer; a second semiconductor region of first conductivity type provided on the first semiconductor region; a first electrode provided in a first trench, the first trench reaching the second semiconductor layer from above the first semiconductor region, the first electrode facing the first semiconductor region via a first insulating film; a second electrode provided in a second trench, the second trench reaching the second semiconductor layer from above the first semiconductor region, the second electrode facing the first semiconductor region via a second insulating film; a third electrode including a first electrode portion, a second electrode portion provided on the first electrode portion and a third electrode portion provided on

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, and a semiconductor layer between the first electrode and the second electrode. A third electrode is in the semiconductor layer. The third electrode extends in a second direction orthogonal to the first direction. A plurality of fourth electrodes are connected to the second electrode and extend in the first direction into the semiconductor layer. The fourth electrodes are spaced from one another along the second direction. A fifth electrode that is electrically isolated from the first electrode and between the first electrode and the plurality of fourth electrodes. The fifth electrode extends in the second direction and contacts the lower ends of the plurality of fourth electrodes in the trench.

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, first, second and third semiconductor regions, a first conductive portion, a gate electrode, and a second insulating portion. The first and second semiconductor regions are provided on the first semiconductor region. The third semiconductor regions are selectively provided respectively on the second semiconductor regions. The first conductive portion is provided inside the first semiconductor region with a first insulating portion interposed. The gate electrode is provided on the first conductive portion and the first insulating portion and separated from the first conductive portion. The gate electrode includes first and second electrode parts. The second insulating portion is provided between the first and second electrode parts. The second insulating portion includes first and second insulating parts. The second electrode is provided on the second and third semiconductor regions.

Abstract: According to one embodiment, a semiconductor device includes first, second, and third conductive members, a semiconductor member, and a first insulating member. The semiconductor member includes a first semiconductor region provided on the first conductive member, a second semiconductor region provided on a portion of the first semiconductor region, and a third semiconductor region provided on the second semiconductor region. An impurity concentration in the third semiconductor region is greater than in the first semiconductor region. The second conductive member includes a first conductive portion electrically connected to the second and third semiconductor regions. The third conductive member is provided on an other portion of the first semiconductor region. At least a portion of the first insulating member is between the semiconductor member and the third conductive member.

Abstract: A semiconductor device includes a polycrystalline silicon part buried in a termination region of a silicon layer. The polycrystalline silicon part contacts the silicon layer, has a higher crystal grain density than the silicon layer, and includes a heavy metal. The silicon layer includes a drift layer located in a cell region and the termination region. The drift layer has a lower first-conductivity-type impurity concentration than a silicon substrate. The drift layer includes a same element of heavy metal as the heavy metal included in the polycrystalline silicon part.