Abstract: A plastic functional element comprising a lower electrode and a transparent upper electrode provided perpendicular to the contact surface between a first oxidation reduction material membrane and a second oxidation reduction material membrane, the oxidation reduction potentials of which being different each other, wherein, based on the difference in oxidation reduction potentials between the oxidation reduction material membranes, by irradiating light to the contact surface or applying a voltage between the electrodes, the condition of electron in the oxidation reduction material is controlled, so as to store information of incident light or applied voltage, and an operational function responding to an input voltage is given, thereby the minimization in size is possible to realize a high density and high speed operation.

Abstract: An organic electronic element material has been produced by modifying cytochrome c551 and cytochrome c552 by bonding at least a second electron transfer functional group to an amino acid residue of the cytochrome. The residue for attachment of the additional electron transfer groups could be introduced by genetic engineering or generated by chemical modification. A plurality of different electron transfer groups can be introduced to provide different redox potentials. Electron transfer can be caused to occur between the functional groups on the modified cytochromes to provide a desired electric property such as rectification, or switching in response to light.

Abstract: A visual information processing device having a neural network function and capable of visual information processing comprises a semiconductor integrated circuit section equipped with a plurality of neuronic circuit regions realizing a neuron function included in the neural network function, and first and second molecular film sections provided on the integrated circuit section. The first molecular film section comprises a light-receiving molecular film section including Tij input elements having a photoelectric function and to which coupling strength levels (Tij) between the plurality of neuronic circuit regions are optically written to realize electric connection between the neuronic circuit regions and image input elements for sensing visual images, each neuronic circuit region corresponding to one pixel.

Abstract: A visual information processing device having a neural network function and capable of visual information processing comprises a semiconductor integrated circuit device section equipped with a plurality of neuronic circuit regions realizing a neuron function included in the neural network function, and first and second molecular film sections provided on the integrated circuit device section. The first molecular film section comprises a light-receiving molecular film section including Tij input elements having a photoelectric function and to which coupling strength levels (Tij) between the plurality of neuronic circuit regions are optically written to realize electric connection between the neuronic circuit regions and image input elements for sensing visual images, each neuronic circuit region corresponding to one pixel.

Abstract: An information processing element for processing information with a function of neural network includes a semiconductor integrated circuit element portion comprising a plurality of neuron circuit regions constituting a neuron function among the neural network function, a molecular film element having a light-electricity function, provided on the circuit element portion, and the combination between the plurality of neurons is realized by utilizing a photoconductivity property of the molecular film element.

Abstract: A photoresponsive element utilizing a molecular heterojunction includes a first redox material film, a second redox material film having a different redox potential from that of the first redox material film and disposed in contact with the first redox material film, a first electrode connected to the first redox material film, and a second electrode connected to the second redox material film. The photoresponsive element is photoconductive and photovoltaic.

Abstract: A visual information processing device has a pair of neural networks which respectively comprise an upper layer and a lower layer of the device. Each of the pair of neural networks comprises a semiconductor integrated circuit having a plurality of neuron circuit regions which are disposed in a matrix form, each of the neuron circuit regions performing a neuron function; a molecule film having a photoelectric function and provided on the semiconductor integrated circuit, the molecule film having (i) a plurality of T.sub.ij signal input sections each performing a wiring function among the plurality of neuron circuit regions, in each of which a T.sub.

Abstract: Disclosed herein is a hybrid circuit element including a redox electrical element formed with redox materials such as biomaterials or pseud-biomaterials and a semiconductor element joined together with the redox electric element. The redox electrical element and the semiconductor element are provided to a common substrate and they are electrically connected to each other with electrical conductors.

Abstract: Disclosed herein is an electronic device including a redox electrical element formed with redox materials such as a flavin derivative and a porphyrin derivative. The size of this electronic device can be reduced to a hyperfine level. By utilizing this electronic device, furthermore, a high-speed integrated circuit of high density can be obtained.

Abstract: Disclosed herein is a hybrid circuit element including a redox electrial element formed with redox materials such as biomaterials or pseud-biomaterials and a semiconductor element together with the redox electric element. The redox electrical element and the semiconductor element are provided to a common substrate and they are electrically connected to each other with electrical conductors.

Abstract: The present invention relates to a redox electric element circuit formed by using oxidation-reduction substance such as electron-transport protein or the like. Oxidation-reduction substance arranged between redox electric elements and the like is inactivated by energy beam irradiation to form insulating matter, so that wirings and element separation structure are established between redox electric elements and the like.

Abstract: Layers constituting a rectifier or transistor element are respectively formed by oxidation-reduction substances so that a redox potential difference is provided between adjacent layers. The oxidation-reduction substances are selected from biogenic redox protein, pseudo-redox protein and the like. The element is implemented in hyperfine size in molecular level, so that an integrated circuit of super-high density can be attained by using the element.