Abstract: The purpose is to prevent the irradiation beam from leaking between the beam irradiation port of the radiation therapy device and the patient affected area that is the target of the emitted irradiation beam, a radiation shielding jig comprising a tare filled with shielding material particles; the tare is made of a resin fabric and has a hollow three-dimensional shape with a radiation pathway portion, the shielding material particles comprising a mixture of sintered particles having a predetermined particle diameter with radiation shielding performance and resin particles having a predetermined particle diameter.

Abstract: A light source device includes: a first light emitter configured to emit first light; a second light emitter configured to emit second light having an identical color component to the first light; and an illumination controller configured to cause, after causing the first light emitter to emit the first light, the second light emitter to emit the second light according to a set light amount in a state in which the first light emitter is caused to emit the first light.

Abstract: An infrared gas detector includes an infrared reception member, a package configured to accommodate the infrared reception member, and an optical filter. The infrared reception member includes a plurality of thermal infrared detection elements each configured to detect infrared based on heat caused by received infrared. The thermal infrared detection elements are placed side by side. The package is provided with a window opening configured to allow the infrared reception member to receive infrared. The optical filter is attached to the package so as to cover the window opening, and includes a plurality of filter elements respectively corresponding to the plurality of the thermal infrared detection elements. Each of the filter elements includes a filter substrate made of an infrared transparent material, a transmission filter configured to transmit infrared of a selected wavelength, and a cut-off filter configured to absorb infrared of a wavelength longer than the selected wavelength.

Abstract: The infrared optical filter of the present invention comprises a substrate formed of an infrared transmitting material and a plurality of filter parts arranged side by side on one surface side of the substrate. Each filter part includes: a first ?/4 multilayer film in which two kinds of thin films having mutually different refractive indices but an identical optical film thickness are alternately stacked; a second ?/4 multilayer film in which the two kinds of thin films are alternately stacked, said second ?/4 multilayer film being formed on the opposite side of the first ?/4 multilayer film from the substrate side, and; and a wavelength selection layer interposed between the first ?/4 multilayer film and the second ?/4 multilayer film, said wavelength selection layer having an optical film thickness different from the optical film thickness of each the thin film according to a desired selection wavelength.

Abstract: An infrared radiation element A heat insulating layer having sufficiently smaller thermal conductivity than a semiconductor substrate, is formed on a surface in the thickness direction of the semiconductor substrate. A heating layer, which is in the form of a lamina (plane) and has larger thermal conductivity and larger electrical conductivity than the heat insulating layer, is formed on the heat insulating layer. A pair of pads 4 for energization are formed on the heating layer. The semiconductor substrate is made of a silicon substrate. The heat insulating layer and the heating layer are formed by porous silicon layers having different porosities from each other, and the heating layer has smaller porosity than the heat insulating layer. By using the infrared radiation element as an infrared radiation source of a gas sensor, it becomes possible to extend a life of the infrared radiation source.

Abstract: In the infrared radiation element (A), a heat insulating layer 2, which has sufficiently smaller thermal conductivity than a semiconductor substrate 1, is formed on a surface in the thickness direction of the semiconductor substrate 1, and a heating layer 3, which is in the form of a lamina (plane) and has larger thermal conductivity and larger electrical conductivity than the heat insulating layer 2, is formed on the heat insulating layer 2, and a pair of pads 4 for energization are formed on the heating layer 3. The semiconductor substrate 1 is made of a silicon substrate. The heat insulating layer 2 and the heating layer 3 are formed by porous silicon layers having different porosities from each other, and the heating layer 3 has smaller porosity than the heat insulating layer 2. By using the infrared radiation element (A) as an infrared radiation source of a gas sensor, it becomes possible to extend a life of the infrared radiation source.

Abstract: A plasma treatment apparatus includes two or more pairs of electrodes for plasma generation, a treatment chamber for accommodating the electrodes, gas supply unit for supplying a plasma-generation gas such as rare gas into the chamber, and a power supply. A pulse-like or AC voltage is applied between the electrodes to generate dielectric barrier discharge plasma of the gas in the vicinity of atmospheric pressure, so that an object placed between the electrodes is treated by the plasma. At least one of the electrodes is provided with a tubular electrode substrate and a protection layer formed by heat-fusion coating a glass-based material on at least an outer surface exposed to plasma of the tubular electrode substrate.

Abstract: A plasma treatment apparatus capable of efficiently performing a plasma treatment to a large area of an object while preventing the occurrence of streamer discharge is provided. The apparatus includes at least one pair of electrodes, gas supply unit for supplying a gas for plasma generation to a discharge space defined between the electrodes, and an electric power supply for applying an AC voltage between the electrodes to generate plasma of the gas for plasma generation in the discharge space. At least one of the pair of electrodes has a dielectric layer at an outer surface thereof. At least one of the pair of electrodes has a curved surface jutting into the discharge space. It is preferred that the electrodes are of a cylindrical structure. In this case, it is particularly preferred that the plasma treatment apparatus further includes a coolant supply unit for supplying a coolant to the interior of the electrodes to reduce an electrode temperature during the plasma treatment.

Abstract: An apparatus for dispensing drinking water including of a chamber in which a container packed with drinking water is mounted, a conduit connected with the container in the chamber to dispense drinking water through the apparatus, and sterilizer installed adjacent the conduit means to apply sterilization with substantial heat thereto. The sterilizing means may include automatic control system to control automatically sterilizing with heat. The conduit may includes a storage area for storing drinking water within the conduit, and the storage area may includes two tanks for storing drinking water, one is a cold water tank including a refrigeration device to chill the drinking water, and the other is a hot water tank including heating device to heat the drinking water. The sterilization with heat may be done by heating the conduit with heaters installed surrounding thereof, or may be done by circulating hot water which is stored in the hot water tank through the apparatus.

Abstract: This invention deals with a substation in which one terminal of a breaker which consists of breaking sections elevationally contacted and separated is electrically connected to a transformer, said breaker is contained in an insulator which is substantially vertically arranged, the lower portion of said insulator is mechanically connected to the tank of said transformer, and a connecting terminal which is electrically connected to the other terminal of said breaker is securely fixed onto the upper portion of said insulator.