Abstract: A transmission circuit for transmitting a data signal between circuit units through a signal wire. The data signal is transmitted for precharging the signal wire to high potential during a precharge period and discharging it to low potential according to data transmitted during an evaluation period or keeping the signal wire as it is. Latch type Source-Coupled-Logic as configured so that a first node and a second node used as an output terminal to the next stage are respectively charged together to high potential during the precharge period. The second node is discharged according to potential at the first node during the evaluation period, and the first node is discharged according to a potential on the signal wire. Thus, the operation of discharging the signal wire by the driver circuit can be sped up.

Abstract: To speed up the operation of a decoder circuit, reduce the power consumption of the decoder circuit and increase the cycle, each circuit such as a buffer, a predecoder and a main decoder in the decoder circuit is composed by a semiconductor logic circuit wherein the number of columns of transistors for pulling down at an output node is small even if the number of inputs is many and the true and a complementary output signal having approximately the same delay time are acquired and the output pulse length of each circuit in the decoder circuit is reduced.

Abstract: Disclosed herein is a transmission circuit for transmitting a data signal between circuit units on a semiconductor integrated circuit through a signal wire. The data signal is transmitted by a driver circuit for precharging the signal wire to a high potential during a precharge period and discharging the signal wire to a low potential according to data to be transmitted during an evaluation period or keeping the signal wire at a high potential as floating as it is.

Abstract: A clocked logic gate circuit is constituted so that a switch unit is constituted by a logic block and a reference MOS transistor, the source of the reference MOS transistor is connected to one output of the logic block, the gate of the reference MOS transistor is connected to the other output of the logic block, and MOS transistors (input transistors) constituting the logic block are connected in parallel. With this arrangement, complementary inputs are not required and a driving MOS transistor and an input transistor (or a driving MOS transistor and a reference MOS transistor) can be connected in series. As a result, a circuit is obtained which is simpler than the double rail logic in constitution is facilitated and can be operated at a higher speed than a CMOS logic circuit and a path transistor logic circuit.

Abstract: One of the factors determining cycle time of an SRAM is recovery time of a bit line after writing. When the size of a precharge PMOS transistor is increased to shorten the recovery time, delay time which is caused by making the precharge PMOS transistors non-conductive at the time of read operation, that is, access time increases. To avoid this, a semiconductor memory is provided with a second precharge circuit in addition to the conventional bit line precharge circuit. The second precharge circuit operates upon detection of completion of writing and stops operation when it detects that the bit line is precharged to a high potential. Consequently, the recovery time after write operation is shortened and the cycle time is reduced without increasing the access time.

Abstract: A clocked logic gate circuit is constituted so that a switch unit is constituted by a logic block and a reference MOS transistor, the source of the reference MOS transistor is connected to one output of the logic block, the gate of the reference MOS transistor is connected to the other output of the logic block, and MOS transistors (input transistors) constituting the logic block are connected in parallel. With this arrangement, complementary inputs are not required and a driving MOS transistor and an input transistor (or a driving MOS transistor and a reference MOS transistor) can be connected in series. As a result, a circuit is obtained which is simpler than the double rail logic in constitution is facilitated and can be operated at a higher speed than a CMOS logic circuit and a path transistor logic circuit.

Abstract: A semiconductor memory in accordance with the present invention includes a sense amplifier composed of a plurality of MOS transistors. When the sense amplifier is on standby, a first control circuit brings an input signal of the sense amplifier to zero. A second control circuit uses voltages developed because of an offset voltage occurring in the sense amplifier to feed back the potentials in the wells of the MOS transistors so that the offset voltage will be nullified. When the offset voltage occurring in the sense amplifier is nullified, a delay time required by the sense amplifier is shortened. This results in the high-speed semiconductor memory.

Abstract: A clocked logic gate circuit is constituted so that a switch unit is constituted by a logic block and a reference MOS transistor, the source of the reference MOS transistor is connected to one output of the logic block, the gate of the reference MOS transistor is connected to the other output of the logic block, and MOS transistors (input transistors) constituting the logic block are connected in parallel. With this arrangement, complementary inputs are not required and a driving MOS transistor and an input transistor (or a driving MOS transistor and a reference MOS transistor) can be connected in series. As a result, a circuit is obtained which is simpler than the double rail logic in constitution is facilitated and can be operated at a higher speed than a CMOS logic circuit and a path transistor logic circuit.

Abstract: A clocked logic gate circuit is constituted so that a switch unit is constituted by a logic block and a reference MOS transistor, the source of the reference MOS transistor is connected to one output of the logic block, the gate of the reference MOS transistor is connected to the other output of the logic block, and MOS transistors (input transistors) constituting the logic block are connected in parallel. With this arrangement, complementary inputs are not required and a driving MOS transistor and an input transistor (or a driving MOS transistor and a reference MOS transistor) can be connected in series. As a result, a circuit is obtained which is simpler than the double rail logic in constitution is facilitated and can be operated at a higher speed than a CMOS logic circuit and a path transistor logic circuit.

Abstract: A semiconductor memory has a plurality of word lines a plurality of bit line pairs and a plurality of memory cells formed at intersection points between the word lines and the bit line pairs. A word decoder generates a word line select signal upon receipt of an address signal and a bit decoder generates a bit line select signal on receiving the address signal. A bit line load circuit receives a signal current from the applicable memory cell, a sense circuit detects an output signal from the bit line load circuit, and a bit line pull-down circuit and a bit line recovery circuit drives the applicable bit lines upon writing data to the memory cell in question.

Abstract: Disclosed is a static type memory cell with high immunity from alpha ray-induced soft errors. The memory cell has a coupling capacitance C.sub.c between two data storage nodes 1 and 2. The p-well (or p-substrate) in which the driver-MOS transistors MN3, MN4 and the transfer MOS transistors MN1, MN2 are formed is connected to a V.sub.bb generator. The voltage V.sub.bb is set lower than the low level V.sub.L of the memory cell signal potential. Even when the potential variation .DELTA.V.sub.L of the low-voltage side node 2 is large, the parasitic diode present between the n-type diffusion layer corresponding to the source or drain of MN1-MN4 and the p-well (or p-substrate) does not turn on. Erroneous operations can therefore be prevented.

Abstract: A decoder formed of multiple circuit blocks each including bipolar transistors Q1 and Q2 having their collectors connected to resistors R1 and R2, respectively, a bipolar transistor Q3 having its collector supplied with a power voltage, and a current source I1 connected commonly to the emitters of Q1-Q3. This circuit configuration permits the decoder and BiCMOS memories using it to operate with a low supply voltage.

Abstract: A semiconductor memory device has a primary memory cell array, a primary decoder having a first circuit producing an intermediate signal from an address signal and a second circuit producing a first cell selection signal from the intermediate signal for selectively driving a word line and a bit line, an auxiliary memory cell array having a plurality of memory cells, each being used for a defective memory cell found in the primary memory cell array, an auxiliary decoder connected to the primary decoder to receive the intermediate signal, a non-volatile memory for storing first information indicating that the primary memory cell array contains a defective memory cell from which a cell defect signal is produced and for storing second information indicating an address of the defective memory cell from which a defective cell address signal is produced, and a control circuit responsive to the cell defect signal and the defective cell address signal for producing a first control signal to be supplied to the second c

Abstract: A circuit technique suitable to attain a high speed of a memory which is constructed in a manner such that memory cells include a field effect transistor and peripheral circuits include a bipolar transistor and a field effect transistor. According to the invention, a bipolar transistor whose collector is connected to a differential amplifier and which supplies a current to the differential amplifier in accordance with a signal which is inputted to a base or an emitter is added, and a bipolar transistor to supply a current only when writing to bit lines is connected. According to the invention, a high speed of the access time when information is read out by switching the selection bit line is accomplished. Further, the charge/discharge time of the bit line when information is written is reduced and a high speed of the writing time can be also accomplished.

Abstract: A semiconductor integrated circuit device including a level conversion circuit in which the simplifying of the circuit and the increasing of the speed of operation have been attained is provided.A pair of complementary output signals amplified to a required signal level by a current switch circuit including differential transistors which receive an input signal and a reference voltage are inputted into a pair of emitter follower circuits. An emitter follower output transistor is driven by an output signal from one emitter follower circuit, while an N-channel MOSFET provided between the output transistor and a current source used as a load is driven by an output signal from the other emitter follower circuit, to obtain a level-amplified output signal from an emitter of the output transistor.

Abstract: The disclosure includes feeding a current I.sub.R to only BIT lines selected, or feeding current I.sub.R transiently to only the BIT lines switched from unselected to selected states; and a sense amplifier for detecting the difference between the currents flowing in selected BIT lines to read out stored information, wherein current I.sub.R and cell current I.sub.cell have a relation of I.sub.R >I.sub.cell. The BiC MOS memory has high speed, low power and high integration density. Diodes are provided between the memory cell and the BIT lines.

Abstract: A semiconductor circuit having a plurality of circuit blocks, each having latch circuits each one thereof being controlled by an internally provided clock signal for preventing malfunction of the circuit. Each circuit is provided with the latch function so that the cycle time is made shorter than the access time. Moreover, the latch means are driven in such a manner that the adjoining ones are prevented from being put to through-state simultaneously, whereby malfunction is prevented.

Abstract: A semiconductor memory device capable of operating at high speeds, and a sense circuit and a decoder circuit that can be suitably used for the memory device. A latch function is imparted to at least either one of the decoder circuit or the sense circuit in the semiconductor memory device.

Abstract: This invention is effective in the speeding up of a decoder circuit and maintenance of output amplitude. The invention is characterized in that, in a decoder circuit composed of a multi-emitter transistor or at least one diode group in which the anodes of a plurality of diodes are connected, and a charge circuit having an output emitter follower transistor, the multi-emitter transistor or the forward voltage of the diodes are larger than the voltage between the base and the emitter of the output emitter follower transistor.