Abstract: Provided is a storage apparatus provided with a plurality of storage elements having storage layers comprising a plurality of layers and electrodes, one layer among the plurality of layers being extended in a first direction and being shared by the plurality of storage elements disposed in the first direction, the electrodes being extended in a second direction that differs from the first direction and being shared by the plurality of storage elements disposed in the second direction.

Abstract: Provided is a storage apparatus provided with a plurality of storage elements having storage layers comprising a plurality of layers and electrodes, one layer among the plurality of layers being extended in a first direction and being shared by the plurality of storage elements disposed in the first direction, the electrodes being extended in a second direction that differs from the first direction and being shared by the plurality of storage elements disposed in the second direction.

Abstract: A modified phenolic resin that is an alternate copolymer of at least one phenolic compound selected from phenol, naphthols, and their derivatives and a compound having a divalent connecting group, said modified phenolic resin having a side chain attached to an aromatic ring having a hydroxy group, said side chain being represented by defined formula (1-1). The modified phenolic resin can be used as a hardener for epoxy resins and a cured product thereof has excellent adhesion and flame retardancy without impairing properties of conventional phenolic resins such as gel time, glass transition temperature, moisture absorption, and mechanical properties. The epoxy resin composition can provide excellent adhesion and flame retardancy as hardeners for semiconductor sealing epoxy resins, insulating materials for electrical/electronic components, and laminates (printed circuit boards).

Abstract: It is intended to provide a storage element having an arrangement which becomes able to be manufactured easily with high density. A storage element includes resistance changing elements 10 having recording layers 2, 3 provided between two electrodes 1, 4 and in which resistance values of the recording layers 2, 3 are reversibly changed with application of electric potential with different polarities to these two electrodes 1, 4, at least part of the layers 2, 3 constructing the recording layers of the resistance changing elements 10 being formed commonly by the same layer in a plurality of adjacent memory cells.

Abstract: It is intended to provide a storage element having an arrangement which becomes able to be manufactured easily with high density. A storage element includes resistance changing elements 10 having recording layers 2, 3 provided between two electrodes 1, 4 and in which resistance values of the recording layers 2, 3 are reversibly changed with application of electric potential with different polarities to these two electrodes 1, 4, at least part of the layers 2, 3 constructing the recording layers of the resistance changing elements 10 being formed commonly by the same layer in a plurality of adjacent memory cells.

Abstract: The modified phenolic resin of the present invention has a specific structure in which a side chain of an aromatic ring having a hydroxyl group in a phenolic resin that is an alternate copolymer of a phenolic compound and a compound having a divalent connecting group, is substituted with a group represented by general formula (1-1). By using the modified phenolic resin as a hardener for epoxy resins, there are provided an epoxy resin, a composition thereof, and a cured product thereof having excellent adhesion and flame retardancy without impairing properties of conventional phenolic resins such as gel time, glass transition temperature, moisture absorption, and mechanical properties. (In the formula, R1 represents a C1-8 linear, branched, or cyclic hydrocarbon group.

Abstract: In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time.

Abstract: In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time.

Abstract: A phenolic resin composition which is stable against an environmental moisture change and, further, excellent in fast curing property, flexibility and heat resistance. The phenolic resin composition contains 70-97% by weight of a phenolic resin and 3-30% by weight of a silicone-based rubber component and has a ratio of an ortho-bonding to a para-bonding at a methylene bonding in the phenolic resin of 2-9.

Abstract: Preparation process for a novolak aralkyl resin having excellent heat resistance and curing property by reacting 0.4 to 0.8 mol of an aralkyl compound based on one mol of the low molecular weight novolak containing 90% by weight or more of bi-nuclear novolak in the presence of an acidic catalyst, the process comprising at first melting the low molecular weight novolak, heating it up to a reaction temperature, then adding 0.001 to 0.05% by weight of the acidic catalyst to the total amount of the low molecular weight novolak and the aralkyl compound, then continuously adding the aralkyl compound for reaction, neutralizing the residual acidic catalyst after the completion of the reaction, a novolak aralkyl resin obtained by the preparation process and a novolak aralkyl resin composition containing said resin.

Abstract: A manufacturing method of a magnetic memory device, wherein the inventive method does not require any special technique for forming pattern, but bilaterally ensures precision for processing a tunnel magneto-resistive effect element (called TMR element) and self-matching formation of connecting elements. The manufacturing method of a magnetic memory device comprises a processing step of forming a tunnel magneto-resistive effect film sandwiching a tunnel barrier layer between a magnetic pinned layer and a memory layer into a predetermined elementary configuration by applying a mask layer, wherein the mask layer is formed by applying a plating process.

Abstract: A manufacturing method of a magnetic memory device, wherein the inventive method does not require any special technique for forming pattern, but bilaterally ensures precision for processing a tunnel magneto-resistive effect element (called TMR element) and self-matching formation of connecting elements. The manufacturing method of a magnetic memory device comprises a processing step of forming a tunnel magneto-resistive effect film sandwiching a tunnel barrier layer between a magnetic pinned layer and a memory layer into a predetermined elementary configuration by applying a mask layer, wherein the mask layer is formed by applying a plating process.

Abstract: An object of the present invention is to provide a phenolic resin composition which is stable against an environmental moisture change and, further, excellent in fast curing property, flexibility and heat resistance. According to the present invention, the phenolic resin composition, containing 70-97% by weight of a phenolic resin and 3-30% by weight of a silicone-based rubber component, which is characterized in that a ratio of an ortho-bonding to a para-bonding at a methylene bonding in the phenolic resin is 2-9 can be provided.

Abstract: Preparation process for a novolak aralkyl resin having excellent heat resistance and curing property by reacting 0.4 to 0.8 mol of an aralkyl compound based on one mol of the low molecular weight novolak containing 90% by weight or more of bi-nuclear novolak in the presence of an acidic catalyst, the process comprising at first melting the low molecular weight novolak, heating it up to a reaction temperature, then adding 0.001 to 0.05% by weight of the acidic catalyst to the total amount of the low molecular weight novolak and the aralkyl compound, then continuously adding the aralkyl compound for reaction, neutralizing the residual acidic catalyst after the completion of the reaction, a novolak aralkyl resin obtained by the preparation process and a novolak aralkyl resin composition containing said resin.

Abstract: A magneto-resistive effect type magnetic head employing a spin valve film in which the direction of magnetization of a free layer is constant even in the absence of an external magnetic field to assure magnetic stability. The magneto-resistive effect type magnetic head includes a magneto-resistive effect film of a planar substantially rectangular configuration, having its longitudinal direction substantially perpendicular to a magnetic recording medium sliding surface, a first electrode connected to a longitudinal end of the magneto-resistive effect film, a second electrode connected to the other longitudinal end of the magneto-resistive effect film and hard magnetic films arranged on both ends along the width of the magneto-resistive effect film. The magneto-resistive effect film is made up of at least a first ferromagnetic layer, a non-magnetic layer, a second ferromagnetic layer and an anti-ferromagnetic layer, layered together.

Abstract: A nitrile resin for a carrier resulting from graft-copolymerization of 100 parts by weight of a monomer mixture containing unsaturated nitrile and alkyl acrylate in the presence of 1 to 30 parts by weight of a rubber-like polymer containing 50% by weight or more of conjugated diene units. The nitrile resin comprises having a glass transition temperature of 50 to 69.degree. C., having a matrix component except rubber ingredient containing 45 to 80% by weight of unsaturated nitrile units and 20 to 55% by weight of alkyl acrylate units and having a weight average molecular weight of 30,000 to 150,000. The invention further relates to a preparation process of nitrile resin and an electrophotographic carrier containing the nitrile resin. The nitrile resin for a carrier of the invention has an excellent processing ability in the carrier preparation step and good balance of electrostatic charge stability of the carrier. Consequently, the resin is highly suitable for use in the electrophotographic carrier.

Abstract: A nitrile resin composition having excellent transparency, antistatic properties and practical physical properties. The composition comprises (A) 80 to 97 wt. % of a nitrile resin which is obtained by graft copolymerization, in the presence of 3 to 30 parts by weight of a rubbery polymer containing at least 50 wt. % of a conjugated diene unit, of 100 parts by weight of a monomer mixture containing an unsaturated nitrile and an alkyl methacrylate, and has, as a matrix component, 65 to 80 wt. % of an unsaturated nitrile unit and 20 to 35 wt. % in total of an alkyl (meth)acrylate unit and a unit of a further monomer copolymerizable with the unsaturated nitrile and alkyl (meth)acrylate; and (B) 3 to 20 wt. % of a polyether ester amide, wherein the ratio of the melt viscosity of the component (A) to that of the component (B) at 210.degree. C. is 0.5 to 5 at a shear rate of 10.sup.2 sec.sup.-1 and 0.5 to 3 at a shear rate of 10.sup.3 sec.sup.

Abstract: The present invention provides a high quality magnetoresistance effect type magnetic head having an increased reproduction output and capable of applying a uniform bias magnetic field to a magnetoresistance effect layer without increasing an impedance. The magnetoresistance effect type magnetic head according to the present invention includes: a magnetic layer 11 magnetized approximately in a vertical direction to a plane 14 opposing to a magnetic recording medium; a non-magnetic insulation layer 12 formed on the magnetic layer 11; and a magnetoresistance effect layer 13 formed on the non-magnetic insulation layer 12 and exhibiting the magnetoresistance effect. In the longitudinal type magnetoresistance effect type magnetic head according to the present, the detection current supplied to a magnetoresistance element is prevented from flowing into a hard magnetic film to lower the head reproduction output.

Abstract: A heat-resistant high-nitrile polymer composition obtained by the graft copolymerization of 100 parts by weight of a monomer mixture comprising 50 to 80% by weight of an unsaturated nitrile monomer, a maleimide monomer, an aromatic vinyl monomer, and a monomer copolymerizable with the foregoing monomers, in the presence of 1 to 40 parts by weight of a conjugated diene-based synthetic rubber containing not less than 50% by weight of a conjugated diene monomer unit, wherein the concentration of residual maleimide monomer in the polymer composition is not greater than 200 ppm by weight. This polymer composition is suitable for use as a molding material for extrusion molding, blow molding, injection molding and the like, and is useful in applications which require gas barrier properties, chemical resistance, non-adsorptive properties and the like, and which require use in automobiles, heat resistance sufficient for heat filling, and safety and hygienic properties.

Abstract: A thin film magnetic head has a lower magnetic layer and an upper magnetic layer formed over the lower magnetic layer so that a small gap is formed between a magnetic gap section of the lower magnetic layer near a sliding surface to be brought into sliding contact with a magnetic recording medium and a magnetic gap section of the upper magnetic layer extending in parallel to the magnetic gap section of the lower magnetic layer near the sliding surface. The upper magnetic layer has a first sloping section extending from the magnetic gap section at an inclination .theta..sub.1 in a range defined by 2.degree..ltoreq..theta..sub.1 .ltoreq.25.degree. to the upper surface of the lower magnetic layer, and a second sloping section extending from the first sloping section at an inclination .theta..sub.2 in a range defined by: 30.degree..ltoreq..theta..sub.2 .ltoreq.80.degree. to the upper surface of the lower magnetic layer.