Abstract: A silicon carbide wafer manufacturing apparatus includes a mounting unit disposed in a reaction chamber. The mounting unit includes a susceptor portion having a mounting surface on which a rear surface of a seed substrate is to be mounted, and a guide portion disposed on the susceptor portion in a state of surrounding the seed substrate. The mounting unit is configured such that a first interval between the seed substrate and the guide portion on an upstream side in a step-flow growth direction is narrower than a second interval between the seed substrate and the guide portion on a downstream side in the step-flow growth direction when an epitaxial layer is grown. The guide portion is configured such that a temperature of the guide portion is lower than a temperature of the seed substrate when the epitaxial layer is grown.

Abstract: A radiated electromagnetic wave estimation is performed by a computer. The estimation process includes: converting a circuit diagram of an electronic circuit board into a combination of a plurality of partial circuits; and predicting radiated electromagnetic waves from the electronic circuit board by using a prediction result of a radiated electromagnetic wave for each of the partial circuits obtained by the converting.

Abstract: Provided is a hydrogen production system including at least one first osmosis device, a circulation flow path, and an alkaline water electrolyzer. The at least one first osmosis device includes a semipermeable membrane which separates a first chamber to which water to be treated is supplied and a second chamber to which an alkaline aqueous solution having a higher osmotic pressure than that of the water to be treated is supplied, and which permeates water in the water to be treated from the first chamber to the second chamber. The circulation flow path is connected to the second chamber and the alkaline aqueous solution is circulated therethrough. The alkaline water electrolyzer is provided in the circulation flow path, and electrolyzes water in an alkaline aqueous solution supplied from the second chamber and produces hydrogen.

Abstract: A gasified gas production system of the present disclosure includes a gasification furnace which produces a gasified gas by gasifying a gasification raw material, a flow passage through which the gasified gas produced in the gasification furnace flows, a catalyst-holding unit which holds a catalyst which promotes reforming of tar included in the gasified gas inside the flow passage, and an oxidation agent supply unit which supplies an oxidation agent with a temperature of 200° C. to 900° C. to the catalyst.

Abstract: A gasified gas production system of the present disclosure includes a gasification furnace which produces a gasified gas by gasifying a gasification raw material, a flow passage through which the gasified gas produced in the gasification furnace flows, a catalyst-holding unit which holds a catalyst which promotes reforming of tar included in the gasified gas inside the flow passage, and an oxidation agent supply unit which supplies an oxidation agent with a temperature of 200° C. to 900° C. to the catalyst.

Abstract: Ammonia off-gas, which is separated and recovered by an ammonia recovery device from gasification gas produced in a gasification furnace in a two-column gasification system, is injected as reducing agent for denitration into an inlet of a cyclone for separation of bed material heated in a combustion furnace from combustion exhaust gas and for returning the bed material to the gasification furnace. The ammonia off-gas is contacted with the high-temperatured combustion exhaust gas to reduce and remove NOx through non-catalytic decomposition. Any excess of the ammonia off-gas is distributed for burning to primary air to the combustion furnace.

Abstract: Reforming of a gasification gas is performed by supplying both a tar-containing gasification gas and oxygen to a reforming furnace and burning a part of the gasification gas to heat an inside of the reforming furnace to a target reforming temperature required for reforming. Oxygen 9 and a first stage gasification gas 3a are supplied to a reforming furnace at an end of the furnace in amounts so as to attain the target reforming temperature required for reforming by combustion of the gasification gas with the oxygen to form a heating zone A in the reforming furnace 1. The remaining gasification gas is supplied as second stage gasification gas 3b to a vicinity downstream of the heating zone A in the reforming furnace 1 to form a reforming zone B.

Abstract: In a circulating fluidized-bed gasification system, an ammonia-off gas 30 from an ammonia remover 25 is fed to a catalytic denitrator 15 with a flow rate regulated such that a molar ratio of the ammonia in the ammonia off-gas 30 from the ammonia recover 25 to nitrogen oxides in an exhaust gas 6 from a combustion furnace 1 is kept within a setting range, and a reminder of the ammonia off-gas 30 is fed to the combustion furnace 1.

Abstract: Ammonia off-gas 17 (ammonia) separated and recovered by an ammonia recovery device 13 from gasification gas 6 produced in a gasification furnace 1 in a two-column gasification system is injected as reducing agent for denitration into an inlet of a cyclone 10 for separation of bed material 4 heated in a combustion furnace 2 from combustion exhaust gas 9 and for returning the bed material to the gasification furnace 1, so that the ammonia off-gas 17 is contacted with the high-temperatured combustion exhaust gas 9 to reduce and remove NOx through non-catalytic decomposition. Any excess of the ammonia off-gas 17 is distributed for burning to primary air 8 to the combustion furnace 2.

Abstract: In a circulating fluidized-bed gasification system, an ammonia-off gas 30 from an ammonia remover 25 is fed to a catalytic denitrator 15 with a flow rate regulated such that a molar ratio of the ammonia in the ammonia off-gas 30 from the ammonia recover 25 to nitrogen oxides in an exhaust gas 6 from a combustion furnace 1 is kept within a setting range, and a reminder of the ammonia off-gas 30 is fed to the combustion furnace 1.

Abstract: Reforming of a gasification gas is performed by supplying both a tar-containing gasification gas and oxygen to a reforming furnace and burning a part of the gasification gas to heat an inside of the reforming furnace to a target reforming temperature required for reforming. Oxygen 9 and a first stage gasification gas 3a are supplied to a reforming furnace at an end of the furnace in amounts so as to attain the target reforming temperature required for reforming by combustion of the gasification gas with the oxygen to form a heating zone A in the reforming furnace 1. The remaining gasification gas is supplied as second stage gasification gas 3b to a vicinity downstream of the heating zone A in the reforming furnace 1 to form a reforming zone B.

Abstract: A ceramic heat exchanger 3 is provided for heat-exchanging of a gasification gas (600-900° C.) containing tar and produced in a gasification furnace 1 with a reformed gasification gas (1100-1500° C.) from a reforming furnace 2 for temperature raising before introduction of the gasification gas into the reforming furnace.