Abstract: To provide a semiconductor device capable of preventing short circuit between first and second gate electrodes. The semiconductor device has a semiconductor substrate, gate insulating film, first gate electrode, stacked film, and second gate electrode. The semiconductor substrate has a first surface including a first region and a second region adjacent thereto. The gate insulating film is placed on the semiconductor substrate in the first region. The first gate electrode is placed on the gate insulating film and has a side surface. The stacked film has a first oxide film on the second region and on the side surface of the first gate electrode, a nitride film on the first oxide film, and a second oxide film on the nitride film. The second gate electrode is placed on the stacked film in the second region. The side surface above the second gate electrode includes a protrusion toward the side of the second gate electrode.

Abstract: A semiconductor device includes a silicon nitride film formed above a front surface side of a semiconductor substrate, a first wiring formed above the silicon nitride film, a second wiring containing aluminum formed over the first wiring via a first insulating film, a second insulating film having an opening over the second wiring, and aluminum nitride formed over the second wiring at a bottom surface of the opening.

Abstract: Characteristics of a semiconductor device are improved. An opening that exposes a pad region of a top-layer wiring containing aluminum is formed in a protection film over the wiring, and aluminum nitride is formed on a surface of the exposed wiring. Additionally, a silicon nitride film is formed on a back surface of a semiconductor substrate having the wiring. As described above, foreign substances generated over the pad region due to the silicon nitride film on the back surface of the semiconductor substrate can be prevented by providing an aluminum nitride film over the pad region. Particularly, even in a case of requiring time before an inspection step and a bonding step, after a formation step of the pad region, formation reaction of the foreign substances can be prevented in the pad region, and the characteristics of the semiconductor device can be improved.

Abstract: Characteristics of a semiconductor device are improved. An opening that exposes a pad region of a top-layer wiring containing aluminum is formed in a protection film over the wiring, and aluminum nitride is formed on a surface of the exposed wiring. Additionally, a silicon nitride film is formed on a back surface of a semiconductor substrate having the wiring. As described above, foreign substances generated over the pad region due to the silicon nitride film on the back surface of the semiconductor substrate can be prevented by providing an aluminum nitride film over the pad region. Particularly, even in a case of requiring time before an inspection step and a bonding step, after a formation step of the pad region, formation reaction of the foreign substances can be prevented in the pad region, and the characteristics of the semiconductor device can be improved.