Abstract: The present invention provides a socket and a pipe joint which facilitate coupling and uncoupling of the socket and a plug and which can prevent the plug from jumping out of the socket in the uncoupling. In a socket 10 of the present invention, fluid in a built-in plug part 22 is released to the outside via communication holes 40 of a second base portion 18 and a through hole 51 of a third base portion 19 in a semi-inserted state. Accordingly, the pressure in a hole portion 34 does not become excessively high and an engaged part 42 is not unexpectedly pushed upward. Thus, an engagement portion 38 and a second engaged portion 26 can surely engage with each other. Hence, the plug 12 can be prevented from jumping out toward the front end side in the semi-inserted state.

Abstract: The present invention provides a socket compatible with multiple types of plugs having front end portions varying in length and a pipe connector having this socket. The socket 10 of the present invention mainly includes a base portion 18, first steel balls 22 and second steel balls 24 housed in housing holes of the base portion 18, an outer support portion 26 supporting the first steel balls 22 and the like from the outer side, and an inner support portion 25 supporting the first steel balls 22 and the like from the inner side. The socket 10 includes first housing holes 50 in which the first steel balls 22 are housed and second housing holes 52 in which the second steel balls 24 are housed and which are longer than the first housing holes 50 in an axial direction.

Abstract: Disclosed are antibodies (immunoglobulins) and fragments thereof that hydrolyze or bind polypeptide antigens belonging to Staphylococcus aureus, hepatitis C virus, human immunodeficiency virus and Alzheimer's disease. Also disclosed are novel methods to improve the antigen reactivity of the immunoglobulins and to treat a pathophysiological condition using the immunoglobulins as therapeutics.

Abstract: After melting raw materials, a distance between a raw material melt surface and a heat-shielding member disposed so as to face to the melt surface is adjusted based on temporal changes in chamber inside conditions, such as the heater temperature at the time of completion of the seed crystal equilibration operation carried out after completion of the raw material melting procedure and/or lag time required for completion of the seed crystal equilibration operation following completion of the raw material melting procedure. As a result, single crystals can be produced efficiently and in high yield, and further, by controlling the crystal interior temperature gradient by modifying the distance between the melt surface and the heat-shielding member, it becomes possible to control the ratio V/G (V:pulling speed, G:crystal interior temperature gradient) to thereby produce single crystals free of crystal defects such as COPs and/or dislocation clusters.

Abstract: Disclosed are antibodies (immunoglobulins) and fragments thereof that hydrolyze or bind polypeptide antigens belonging to Staphyloccus aureus, hepatitis C virus, human immunodeficiency virus and Alzheimer's disease. Also disclosed are novel methods to improve the antigen reactivity of the immunoglobulins and to treat a pathophysiological condition using the immunoglobulins as therapeutics.

Abstract: A fluid fitting of an embodiment mainly includes a socket part, a spherical valve inserted in the socket part, and a plug part configured to be inserted at a tip portion thereof into the spherical valve. Moreover, the plug part is fixed in the direction of turn by engaging an expanded-diameter portion of the plug part with a recess of the socket part. Thus, the plug part is prevented from being detached from the socket part while the fluid fitting is in use.

Abstract: In a socket of the present invention, an incorporated plug part is disposed in a third base part. The socket is in an inserted state when an engaging portion of this incorporated plug part is engaged with a first engaged portion of an engaged part. In this state, an engaging portion of a plug is engaged with steel balls disposed in the incorporated plug part, thereby allowing the plug and the socket to be fitted to each other, so that an airtight condition is established in a pipe fitting.

Abstract: A fluid fitting of an embodiment mainly includes: a first connecting part connected to a supply path through which compressed air is supplied; a second connecting part connected to a use path through which the compressed air is used; a rotary fitting body by which the first connecting part and the second connecting part are rotatably connected; and a third connecting part rotatably connected to the second connecting part. Further, the rotary fitting body is capable of rotating such that the first connecting part can bend at an angle of 90 degrees with respect to the second connecting part.

Abstract: A fluid fitting of an embodiment mainly includes a socket part, a spherical valve inserted in the socket part, and a plug part configured to be inserted at a tip portion thereof into the spherical valve. Moreover, the plug part is fixed in the direction of turn by engaging an expanded-diameter portion of the plug part with a recess of the socket part. Thus, the plug part is prevented from being detached from the socket part while the fluid fitting is in use.

Abstract: A single crystal pulling apparatus comprises: a chamber; a crucible disposed within the chamber for containing a melt; a water-cooling means disposed within the chamber in such a manner as surrounding a single crystal pulled up from the melt in the crucible; water piping for feeding cooling water to and discharging the same from the water-cooling means; and supporting arms connected to the chamber for supporting the water-cooling means, wherein the supporting arms are disposed between the single crystal and the water piping. According to this configuration, the supporting arms can prevent the water piping from being damaged in the event of fall and collapse of the single crystal due to failure of the seed neck portion or in the event of rupture of the single crystal due to thermal stress, for instance.

Abstract: In a socket of the present invention, an incorporated plug part is disposed in a third base part. The socket is in an inserted state when an engaging portion of this incorporated plug part is engaged with a first engaged portion of an engaged part. In this state, an engaging portion of a plug is engaged with steel balls disposed in the incorporated plug part, thereby allowing the plug and the socket to be fitted to each other, so that an airtight condition is established in a pipe fitting.

Abstract: By determining a control direction of a pulling-up velocity without using a position or a width of an OSF region as an index, a subsequent pulling-up velocity profile is fed back and adjusted. A silicon single crystal ingot that does not include a COP and a dislocation cluster is grown by a CZ method, a silicon wafer is sliced from the silicon single crystal ingot, reactive ion etching is performed on the silicon wafer in an as-grown state, and a grown-in defect including silicon oxide is exposed as a protrusion on an etching surface. A growing condition in subsequent growing is fed back and adjusted on the basis of an exposed protrusion generation region. As a result, feedback with respect to a nearest batch can be performed without performing heat treatment to expose a defect.

Abstract: It is possible to provide a silicon wafer that as well as being free of COPs and dislocation clusters, has defects (grown-in defects including silicon oxides), which are not overt in an as-grown state, such as OSF nuclei and oxygen precipitate nuclei existing in the PV region, to be vanished or reduced, by adopting a method for producing a silicon wafer, the method comprising the steps of: growing a single crystal silicon ingot by the Czochralski method; cutting a silicon wafer out of the ingot; subjecting the wafer to an RTP at 1,250° C. or more for 10 seconds or more in an oxidizing atmosphere; and removing a grown-in defect region including silicon oxides in the vicinity of wafer surface layer after the RTP.

Abstract: It is possible to provide a silicon wafer that as well as being free of COPs and dislocation clusters, has defects (grown-in defects including silicon oxides), which are not overt in an as-grown state, such as OSF nuclei and oxygen precipitate nuclei existing in the PV region, to be vanished or reduced, by adopting a method for producing a silicon wafer, the method comprising the steps of: growing a single crystal silicon ingot by the Czochralski method; cutting a silicon wafer out of the ingot; subjecting the wafer to an RTP at 1,250° C. or more for 10 seconds or more in an oxidizing atmosphere; and removing a grown-in defect region including silicon oxides in the vicinity of wafer surface layer after the RTP.

Abstract: This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of phosphorus and arsenic.

Abstract: Disclosed are antibodies (immunoglobulins) and fragments thereof that hydrolyze or bind polypeptide antigens belonging to Staphyloccus aureus, hepatitis C virus, human immunodeficiency virus and Alzheimer's disease. Also disclosed are novel methods to improve the antigen reactivity of the immunoglobulins and to treat a pathophysiological condition using the immunoglobulins as therapeutics.

Abstract: By determining a control direction of a pulling-up velocity without using a position or a width of an OSF region as an index, a subsequent pulling-up velocity profile is fed back and adjusted. A silicon single crystal ingot that does not include a COP and a dislocation cluster is grown by a CZ method, a silicon wafer is sliced from the silicon single crystal ingot, reactive ion etching is performed on the silicon wafer in an as-grown state, and a grown-in defect including silicon oxide is exposed as a protrusion on an etching surface. A growing condition in subsequent growing is fed back and adjusted on the basis of an exposed protrusion generation region. As a result, feedback with respect to a nearest batch can be performed without performing heat treatment to expose a defect.

Abstract: After melting raw materials, a distance between a raw material melt surface and a heat-shielding member disposed so as to face to the melt surface is adjusted based on temporal changes in chamber inside conditions, such as the heater temperature at the time of completion of the seed crystal equilibration operation carried out after completion of the raw material melting procedure and/or lag time required for completion of the seed crystal equilibration operation following completion of the raw material melting procedure. As a result, single crystals can be produced efficiently and in high yield, and further, by controlling the crystal interior temperature gradient by modifying the distance between the melt surface and the heat-shielding member, it becomes possible to control the ratio V/G (V:pulling speed, G:crystal interior temperature gradient) to thereby produce single crystals free of crystal defects such as COPs and/or dislocation clusters.

Abstract: By giving a shoulder portion height of at least 100 mm in growing silicon single crystals having a diameter of 450 mm (weighing up to 1100 kg) by the CZ method, it becomes possible to inhibit the occurrence of dislocations in the shoulder formation step to thereby achieve a yield improvement and increase productivity. Furthermore, when this method is applied under application of a transverse magnetic field with a predetermined intensity, the occurrence of dislocations can be further inhibited and, accordingly, defect-free silicon single crystals suited for wafer manufacture can be grown with high production efficiency. Thus, the method is best suited for the production of large-diameter silicon single crystals having a diameter of 450 mm, which are applied in the manufacture of semiconductor devices.