Abstract: There is provided a method for producing a magnetic refrigeration module. The method comprises: a step (1) of preparing a mixture powder A containing an La(Fe,Si)13-based alloy powder, an M powder, and optionally an organic binder, the La(Fe,Si)13-based alloy powder having a main phase with an NaZn13-type crystal structure, and the M powder containing a metal and/or an alloy and having a melting point of 1090° C. or lower; a step (2) of subjecting the mixture powder A to a heat treatment in a reducing atmosphere at a temperature close to the melting point of the M powder to obtain a sintered body B; and a step (3) of subjecting the sintered body B to a hydrogenation treatment in a hydrogen-containing atmosphere.

Abstract: There is provided a method for producing a magnetic refrigeration module. The method comprises: a step (1) of preparing a mixture powder A containing an La(Fe,Si)13-based alloy powder, an M powder, and optionally an organic binder, the La(Fe,Si)13-based alloy powder having a main phase with an NaZn13-type crystal structure, and the M powder containing a metal and/or an alloy and having a melting point of 1090° C. or lower; a step (2) of subjecting the mixture powder A to a heat treatment in a reducing atmosphere at a temperature close to the melting point of the M powder to obtain a sintered body B; and a step (3) of subjecting the sintered body B to a hydrogenation treatment in a hydrogen-containing atmosphere.

Abstract: Provided is a magnetic refrigeration material which has a Curie temperature near room temperature or higher, and provides refrigeration performance well over that of conventional materials when subjected to a field change up to 2 Tesla, which is assumed to be achievable with a permanent magnet. The magnetic refrigeration material is of a composition represented by the formula La1-fREf(Fe1-a-b-c-d-eSiaCObXcYdZe)13 (RE: at least one of rare earth elements including Sc and Y and excluding La; X: Ga and/or Al; Y: at least one of Ge, Sn, B, and C; Z: at least one of Ti, V, Cr, Mn, Ni, Cu, Zn, and Zr; 0.03?a?0.17, 0.003?b?0.06, 0.02?c?0.10, 0?d?0.04, 0?e?0.04, 0?f?0.50), and has Tc of not lower than 220 K and not higher than 276 K, and the maximum (??Smax) of magnetic entropy change (??SM) of the material when subjected to a field change up to 2 Tesla is not less than 5 J/kgK.

Abstract: Provided is a safe and efficient method for producing lithium metal which facilitates efficient production of anhydrous lithium chloride without corrosion of the system materials by chlorine gas or molten lithium carbonate, and which allows production of lithium metal by molten salt electrolysis of the produced anhydrous lithium chloride as a raw material. The method includes the steps of (A) contacting and reacting lithium carbonate and chlorine gas in a dry process to produce anhydrous lithium chloride, and (B) subjecting the raw material for electrolysis containing the anhydrous lithium chloride to molten salt electrolysis under such conditions as to produce lithium metal, wherein the chlorine gas generated by the molten salt electrolysis in step (B) is used as the chlorine gas in step (A) to continuously perform steps (A) and (B).

Abstract: Provided is a magnetic refrigeration material which has a Curie temperature near room temperature or higher, and provides refrigeration performance well over that of conventional materials when subjected to a field change up to 2 Tesla, which is assumed to be achievable with a permanent magnet. The magnetic refrigeration material is of a composition represented by the formula La1-fREf(Fe1-a-b-c-d-eSiaCObXcYdZe)13 (RE: at least one of rare earth elements including Sc and Y and excluding La; X: Ga and/or Al; Y: at least one of Ge, Sn, B, and C; Z: at least one of Ti, V, Cr, Mn, Ni, Cu, Zn, and Zr; 0.03?a?0.17, 0.003?b?0.06, 0.02?c?0.10, 0?d?0.04, 0?e?0.04, 0?f?0.50), and has Tc of not lower than 220 K and not higher than 276 K, and the maximum (??Smax) of magnetic entropy change (??SM) of the material when subjected to a field change up to 2 Tesla is not less than 5 J/kgK.

Abstract: An image reading apparatus includes an image reader, a storage unit, and a control unit, wherein the storage unit includes a command storage unit, and the control unit includes a mark detecting unit that detects at least one mark matching the characteristic information of the mark from the margin of the manuscript read by the image reader to acquire the characteristic information of the detected mark, a positional information determining unit that detects coordinates of the mark in the manuscript to determine the positional information corresponding to the detected coordinates, a command searching unit that searches the command storage unit for the command associated with the characteristic information and the positional information using the characteristic information and the positional information as search keys, and a command executing unit that executes the processing specified for the command searched for on the manuscript.

Abstract: Provided is a safe and efficient method for producing lithium metal which facilitates efficient production of anhydrous lithium chloride without corrosion of the system materials by chlorine gas or molten lithium carbonate, and which allows production of lithium metal by molten salt electrolysis of the produced anhydrous lithium chloride as a raw material. The method includes the steps of (A) contacting and reacting lithium carbonate and chlorine gas in a dry process to produce anhydrous lithium chloride, and (B) subjecting the raw material for electrolysis containing the anhydrous lithium chloride to molten salt electrolysis under such conditions as to produce lithium metal, wherein the chlorine gas generated by the molten salt electrolysis in step (B) is used as the chlorine gas in step (A) to continuously perform steps (A) and (B).

Abstract: A mobile device includes a control unit, a storage unit, a display unit, and a displacement detecting unit that detects displacement of a physical value caused when the mobile device moves, wherein the control unit includes an icon displaying unit that displays the icon in the display area, an icon moving unit that moves the icon displayed, in the display area and based on the displacement of the physical value, an area determining unit that compares coordinates of the icon moved and displayed in the display area to the specific area to thereby determine whether the icon is in the specific area, and an area-specific processing executing unit that retrieves the area-specific processing corresponding to the specific area and executes the area-specific processing when the area determining unit determines that the icon is in the specific area.

Abstract: Provided is an information processing device which includes: a transparent display element display unit (21) that displays a transparent window in association with display position information for specifying a display position on a display (2), the transparent window being displayed as transparent at least in part such that display information covered with the transparent window is visually recognized through the transparent window; an information acquisition unit (22) that acquires the display information covered with the transparent window based on the display position information; a superimposition detection unit (27) that detects that a plurality of the transparent windows are in a positional relation in which the plurality of the transparent windows overlap one another to be displayed, based on the display position information; and a processing execution unit (28) that executes, in a case where the superimposition of the plurality of the transparent windows is detected, predetermined processing based on

Abstract: An object management apparatus comprising an image photographing unit, a storage unit, and a control unit communicably connected to at least one operation target device and a mobile terminal including a displacement detecting unit that detects a displacement of a physical quantity caused when the mobile terminal moves and a display unit via a network, wherein the storage unit includes, a display object storing unit, an operation target object storing unit, and a processing command storing unit, and the control unit includes, a display object transmitting unit, a mobile terminal position acquiring unit, an region determining unit, an operation target object determining unit, a processing command determining physical quantity displacement receiving unit, a display object acquiring unit, a processing command searching unit, and a processing command executing unit.

Abstract: Provided is a safe and efficient method for producing lithium metal which facilitates efficient production of anhydrous lithium chloride without corrosion of the system materials by chlorine gas or molten lithium carbonate, and which allows production of lithium metal by molten salt electrolysis of the produced anhydrous lithium chloride as a raw material. The method includes the steps of (A) contacting and reacting lithium carbonate and chlorine gas in a dry process to produce anhydrous lithium chloride, and (B) subjecting the raw material for electrolysis containing the anhydrous lithium chloride to molten salt electrolysis under such conditions as to produce lithium metal, wherein the chlorine gas generated by the molten salt electrolysis in step (B) is used as the chlorine gas in step (A) to continuously perform steps (A) and (B).

Abstract: Provided is an information processing device which includes: a transparent display element display unit (21) that displays a transparent window in association with display position information for specifying a display position on a display (2), the transparent window being displayed as transparent at least in part such that display information covered with the transparent window is visually recognized through the transparent window; an information acquisition unit (22) that acquires the display information covered with the transparent window based on the display position information; a superimposition detection unit (27) that detects that a plurality of the transparent windows are in a positional relation in which the plurality of the transparent windows overlap one another to be displayed, based on the display position information; and a processing execution unit (28) that executes, in a case where the superimposition of the plurality of the transparent windows is detected, predetermined processing based on

Abstract: A mobile device includes a control unit, a storage unit, a display unit, and a displacement detecting unit that detects displacement of a physical value caused when the mobile device moves, wherein the control unit includes an icon displaying unit that displays the icon in the display area, an icon moving unit that moves the icon displayed, in the display area and based on the displacement of the physical value, an area determining unit that compares coordinates of the icon moved and displayed in the display area to the specific area to thereby determine whether the icon is in the specific area, and an area-specific processing executing unit that retrieves the area-specific processing corresponding to the specific area and executes the area-specific processing when the area determining unit determines that the icon is in the specific area.

Abstract: An object management apparatus comprising an image photographing unit, a storage unit, and a control unit communicably connected to at least one operation target device and a mobile terminal including a displacement detecting unit that detects a displacement of a physical quantity caused when the mobile terminal moves and a display unit via a network, wherein the storage unit includes, a display object storing unit, an operation target object storing unit, and a processing command storing unit, and the control unit includes, a display object transmitting unit, a mobile terminal position acquiring unit, an region determining unit, an operation target object determining unit, a processing command determining physical quantity displacement receiving unit, a display object acquiring unit, a processing command searching unit, and a processing command executing unit.

Abstract: An image reading apparatus includes an image reader, a storage unit, and a control unit, wherein the storage unit includes a command storage unit, and the control unit includes a mark detecting unit that detects at least one mark matching the characteristic information of the mark from the margin of the manuscript read by the image reader to acquire the characteristic information of the detected mark, a positional information determining unit that detects coordinates of the mark in the manuscript to determine the positional information corresponding to the detected coordinates, a command searching unit that searches the command storage unit for the command associated with the characteristic information and the positional information using the characteristic information and the positional information as search keys, and a command executing unit that executes the processing specified for the command searched for on the manuscript.

Abstract: The invention relates to a method for producing high-performance Cr—Ti—V hydrogen storage alloys utilizing a thermit process, whereby residence of adversely affecting impurities is inhibited, addition of not less than 10 at % of Ti as an alloy component is realized, and thermal burden on the crucible used in the method is reduced. The method includes the steps of: (A) providing an alloy material (1) comprising a Cr oxide, a V oxide, and a reducing agent Al, and an alloy material (2) comprising Ti; (B) placing the alloy materials in a crucible for thermit reduction so that the alloy material (1) is placed above the alloy material (2); (C) igniting the alloy material (1) placed in step (B) and melting all metal elements contained in the alloy materials the with heat of the thermit reaction of the alloy material (1); and (D) making the alloy melt obtained in step (C) into an alloy.

Abstract: The invention relates to a method for producing high-performance Cr—Ti—V hydrogen storage alloys utilizing thermit process, whereby residence of adversely affecting impurities is inhibited, addition of not less than 10 at % of Ti as an alloy component is realized, and thermal burden on the crucible used in the method is reduced. The method includes the steps of: (A) providing an alloy material (1) comprising a Cr oxide, a V oxide, and a reducing agent Al, and an alloy material (2) comprising Ti; (B) placing said alloy materials in a crucible for thermit reduction so that the alloy material (1) is placed above the alloy material (2); (C) igniting the alloy material (1) placed in step (B) and melting all metal elements contained in the alloy materials with heat of thermit reaction of the alloy material (1); and (D) making an alloy melt obtained in step (C) into an alloy.

Abstract: A manuscript text composition system and a program storage medium for the same specify data groups with a plurality of dimensions using a parameter table having two or more dimensional coordinate axes to manage data. In pasting specific data, a manuscript text composition system and a program storage medium for the same make it possible to paste specific data after various processing has been conducted. In pasting specific data using templates that enable characters and images to be pasted in a replaceable manner using replacement detection keys, a manuscript text composition system and a program storage medium for the same set parameters used in each corresponding template, and specify the parameters by the replacement detection keys themselves so that each specific processing can be conducted.

Abstract: A semiconductor epitaxial substrate, characterized in that a crystal is formed by epitaxial growth on a gallium arsenide single crystal substrate whose crystallographic plane azimuth is slanted from that of one of {100} planes at an angle of not more than 1.degree., that at least part of the epitaxial crystal is an In.sub.x Ga.sub.(1-x) As crystal (wherein 0<x<1), and that the epitaxial growth is carried out by chemical vapor deposition. Since the In.sub.x Ga.sub.(1-x) As layer has reduced microscopic unevenness and reduced variation in thickness, the epitaxial substrate of the present invention can be used as a channel layer of a field effect transistor or as an active layer of a semiconductor laser to endow these devices with excellent characteristics.

Abstract: A semiconductor epitaxial substrate and a process for producing the same, the semiconductor epitaxial substrate comprising a GaAs single-crystal substrate having thereon an In.sub.y Ga.sub.(1-y) As (0<y.ltoreq.1) crystal layer as a channel layer, the composition and the thickness of the In.sub.y Ga.sub.(1-y) As layer being in the ranges within the elastic deformation limit of crystals constituting the In.sub.y Ga.sub.(1-y) As layer and the vicinity of the In.sub.y Ga.sub.(1-y) As layer, the semiconductor epitaxial substrate further comprising a semiconductor layer between the channel layer and an electron donating layer for supplying electrons to the channel layer, the semiconductor layer having a thickness of from 0.5 to 5 nm and a bandgap width within the range of from the bandgap width of GaAs to the bandgap width of the electron donating layer.