Patents by Inventor Hiroaki Tamemoto

Hiroaki Tamemoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240001622
    Abstract: A method for producing a resin part includes: preparing an intermediate body comprising a first member and a second member, the first member containing a resin; and welding the first member with the second member by performing scanning of the intermediate body with a first laser beam and a second laser beam. In the welding of the first member with the second member, the scanning with the first laser beam and the second laser beam is performed in a state in which a center of a second spot is located on a rear side in a direction of the scanning with the first laser beam and the second laser beam as compared to a center of a first spot while at least a part of the first spot and at least a part of the second spot overlap with each other.
    Type: Application
    Filed: June 28, 2023
    Publication date: January 4, 2024
    Applicants: Nichia Corporation, Laser Systems Inc.
    Inventors: Ryota TAOKA, Ryota TAKAO, Minoru YAMAMOTO, Hiroaki TAMEMOTO, Hiroshi YAGUCHI
  • Publication number: 20230387344
    Abstract: A method of producing a semiconductor device, the method includes steps of: detecting a defect included in a semiconductor layer; forming a metal film on the semiconductor layer; after forming the metal film on the semiconductor layer, exposing the semiconductor layer through the metal film by removing a portion of the metal film by irradiation with a first laser emitting red or infrared light; and after the step of exposing the semiconductor layer, removing a portion of the semiconductor layer by irradiation with a second laser emitting ultraviolet light, said portion of the semiconductor layer including the defect. A diameter of said portion of the metal film is greater than a diameter of said portion of the semiconductor layer in a plan view. Said portion of the metal film overlaps with said portion of the semiconductor layer in the plan view.
    Type: Application
    Filed: May 1, 2023
    Publication date: November 30, 2023
    Applicant: NICHIA CORPORATION
    Inventors: Yoshiki YAMAGUCHI, Hiroki HAYASHI, Satoshi OKUMURA, Minoru YAMAMOTO, Hiroaki TAMEMOTO
  • Patent number: 11769852
    Abstract: A method of manufacturing a light emitting element according to certain embodiments of the present disclosure includes: scanning and irradiating a first laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines collectively in a shape of a tessellation of a plurality of hexagonal shapes in a top view to create a plurality of first modified regions along the predetermined dividing lines; and scanning and irradiating a second laser light having a second irradiation intensity greater than the first irradiation intensity to the sapphire substrate along the predetermined dividing lines to create a plurality of second modified regions overlapping the plurality of first modified regions.
    Type: Grant
    Filed: July 31, 2020
    Date of Patent: September 26, 2023
    Assignee: NICHIA CORPORATION
    Inventors: Masayuki Ibaraki, Minoru Yamamoto, Naoto Inoue, Hiroaki Tamemoto
  • Publication number: 20230138592
    Abstract: A method for manufacturing a light-emitting element includes preparing a wafer; a laser beam irradiation process; and a separation process. The laser beam irradiation process includes a first irradiation process of forming a plurality of first modified portions, and a second irradiation process of forming a plurality of second modified portions. The second modified portions are formed in the second irradiation process so that a length in a thickness direction of the sapphire substrate of the second modified portions is greater than a length in the thickness direction of the first modified portions.
    Type: Application
    Filed: October 12, 2022
    Publication date: May 4, 2023
    Applicants: NICHIA CORPORATION, HAMAMATSU PHOTONICS K.K.
    Inventors: Naoto INOUE, Minoru YAMAMOTO, Taichi OKUBO, Hiroaki TAMEMOTO, Ryota SUGIO, Yusuke SEKIMOTO
  • Publication number: 20220371130
    Abstract: This laser processing apparatus is for forming modified regions in an object, which includes a sapphire substrate having a C-plane as a main surface, along cutting lines by focusing laser light on the object, and is provided with a laser light source, a spatial light modulator, and a focusing optical system. The spatial light modulator performs aberration correction by a first aberration correction amount smaller than an ideal aberration correction amount when the modified region is formed along a first cutting line along an a-axis direction of the sapphire substrate, and performs aberration correction by a second aberration correction amount smaller than the ideal aberration correction amount and different from the first aberration correction amount when the modified region is formed along a second cutting line along an in-axis direction of the sapphire substrate.
    Type: Application
    Filed: August 7, 2020
    Publication date: November 24, 2022
    Applicants: NICHIA CORPORATION, HAMAMATSU PHOTONICS K.K.
    Inventors: Hiroaki TAMEMOTO, Minoru YAMAMOTO, Yusuke SEKIMOTO, Ryota SUGIO, Tominori NAKAMURA
  • Publication number: 20220354063
    Abstract: A plant treatment apparatus includes: a plant holding unit; an ultraviolet irradiation unit configured to irradiate a plant held by the plant holding unit with light comprising ultraviolet light in a wavelength range of no less than 270 nm and no more than 290 nm; and either (i) a plant immersion unit configured to immerse the plant held by the plant holding unit into a liquid that comprises water and is held by the plant immersion unit, or (ii) a liquid ejection unit that ejects the liquid towards the plant held by the plant holding unit.
    Type: Application
    Filed: July 10, 2020
    Publication date: November 10, 2022
    Applicant: NICHIA CORPORATION
    Inventors: Yasuo FUJIKAWA, Tomohiro TSURUMOTO, Hiroaki TAMEMOTO
  • Patent number: 11489086
    Abstract: A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.
    Type: Grant
    Filed: June 22, 2020
    Date of Patent: November 1, 2022
    Assignee: NICHIA CORPORATION
    Inventors: Naoto Inoue, Minoru Yamamoto, Satoshi Okumura, Hiroki Okamoto, Hiroaki Tamemoto
  • Publication number: 20220324180
    Abstract: A method for processing a resin member includes: irradiating a first member comprising a resin with first light of a first wavelength that causes electronic excitation of the resin; and irradiating the resin electronically excited through irradiation with the first light with second light of a second wavelength longer than the first wavelength. A wavelength range of the second wavelength is within a wavelength range in which light absorption of the resin increases through electronic excitation of the resin.
    Type: Application
    Filed: June 23, 2022
    Publication date: October 13, 2022
    Applicants: Laser Systems Inc., NICHIA CORPORATION
    Inventors: Yuichi ASAKAWA, Yasuyuki TSUBOI, Hiroaki TAMEMOTO, Ryota TAOKA, Minoru YAMAMOTO
  • Patent number: 11289621
    Abstract: A method includes preparing a wafer including a substrate and a semiconductor structure, and irradiating an inner portion of the substrate at a predetermined depth in a thickness direction a plurality of times with laser pulses at a first time interval and a predetermined distance interval between irradiations. Each irradiation performed at the first time intervals in the step of irradiating the substrate with laser pulses includes irradiating the substrate at a first focal position in the thickness direction with a first laser pulse having a first pulse-energy; and after irradiating with the first laser pulse, irradiating the substrate with a second laser pulse performed after a second time interval, the second time interval being shorter than the first time interval and being in a range of 3 ps to 900 ps, and the second laser pulse having a second pulse-energy 0.5 to 1.5 times the first pulse-energy.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: March 29, 2022
    Assignees: NICHIA CORPORATION, IMRA AMERICA, INC.
    Inventors: Minoru Yamamoto, Naoto Inoue, Hiroaki Tamemoto, Yoshitaka Hotta, Hideyuki Ohtake
  • Publication number: 20210036182
    Abstract: A method of manufacturing a light emitting element according to certain embodiments of the present disclosure includes: scanning and irradiating a first laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines collectively in a shape of a tessellation of a plurality of hexagonal shapes in a top view to create a plurality of first modified regions along the predetermined dividing lines; and scanning and irradiating a second laser light having a second irradiation intensity greater than the first irradiation intensity to the sapphire substrate along the predetermined dividing lines to create a plurality of second modified regions overlapping the plurality of first modified regions.
    Type: Application
    Filed: July 31, 2020
    Publication date: February 4, 2021
    Applicant: NICHIA CORPORATION
    Inventors: Masayuki IBARAKI, Minoru YAMAMOTO, Naoto INOUE, Hiroaki TAMEMOTO
  • Publication number: 20210005777
    Abstract: A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.
    Type: Application
    Filed: June 22, 2020
    Publication date: January 7, 2021
    Inventors: Naoto INOUE, Minoru YAMAMOTO, Satoshi OKUMURA, Hiroki OKAMOTO, Hiroaki TAMEMOTO
  • Publication number: 20200365758
    Abstract: A method includes preparing a wafer including a substrate and a semiconductor structure, and irradiating an inner portion of the substrate at a predetermined depth in a thickness direction a plurality of times with laser pulses at a first time interval and a predetermined distance interval between irradiations. Each irradiation performed at the first time intervals in the step of irradiating the substrate with laser pulses includes irradiating the substrate at a first focal position in the thickness direction with a first laser pulse having a first pulse-energy; and after irradiating with the first laser pulse, irradiating the substrate with a second laser pulse performed after a second time interval, the second time interval being shorter than the first time interval and being in a range of 3 ps to 900 ps, and the second laser pulse having a second pulse-energy 0.5 to 1.5 times the first pulse-energy.
    Type: Application
    Filed: November 26, 2018
    Publication date: November 19, 2020
    Applicants: NICHIA CORPORATION, IMRA AMERICA, INC.
    Inventors: Minoru YAMAMOTO, Naoto INOUE, Hiroaki TAMEMOTO, Yoshitaka HOTTA, Hideyuki OHTAKE
  • Patent number: 10672660
    Abstract: A method of manufacturing a semiconductor element includes: providing a wafer having a semiconductor layered body on a sapphire substrate; irradiating a laser light in an interior region of the sapphire substrate to create cracks in the sapphire substrate by performing a first scan to irradiate the laser light at a first depth with a first pulse energy to create a first modified region, and a second scan following the first scan to irradiate the laser light at a second depth with a second pulse energy greater than the first pulse energy along and within the first modified region; and dividing the wafer by extending the cracks to obtain a semiconductor element.
    Type: Grant
    Filed: February 22, 2018
    Date of Patent: June 2, 2020
    Assignee: NICHIA CORPORATION
    Inventors: Naoto Inoue, Sho Kusaka, Minoru Yamamoto, Masayuki Ibaraki, Hiroaki Tamemoto
  • Patent number: 10388827
    Abstract: A method for manufacturing a semiconductor element is provided. The method includes providing a semiconductor wafer including a substrate and a semiconductor structure on the substrate, forming a cleavage starting portion in the semiconductor wafer, and dividing the semiconductor wafer into a plurality of semiconductor elements by transferring a pressing member on the semiconductor wafer in a state where the pressing member is pressed against the semiconductor wafer to separate the semiconductor wafer at the cleavage starting portion. The pressing member includes a tip portion to be pressed on the semiconductor wafer, and the tip portion has a spherical surface.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: August 20, 2019
    Assignee: NICHIA CORPORATION
    Inventors: Hiroki Okamoto, Hiroaki Tamemoto, Junya Narita
  • Publication number: 20190035973
    Abstract: A method for manufacturing a semiconductor element is provided. The method includes providing a semiconductor wafer including a substrate and a semiconductor structure on the substrate, forming a cleavage starting portion in the semiconductor wafer, and dividing the semiconductor wafer into a plurality of semiconductor elements by transferring a pressing member on the semiconductor wafer in a state where the pressing member is pressed against the semiconductor wafer to separate the semiconductor wafer at the cleavage starting portion. The pressing member includes a tip portion to be pressed on the semiconductor wafer, and the tip portion has a spherical surface.
    Type: Application
    Filed: October 2, 2018
    Publication date: January 31, 2019
    Applicant: NICHIA CORPORATION
    Inventors: Hiroki OKAMOTO, Hiroaki TAMEMOTO, Junya NARITA
  • Patent number: 10115857
    Abstract: A method for manufacturing a semiconductor element is provided. The method includes providing a semiconductor wafer including a substrate and a semiconductor structure on the substrate, forming a cleavage starting portion in the semiconductor wafer, and dividing the semiconductor wafer into a plurality of semiconductor elements by transferring a pressing member on the semiconductor wafer in a state where the pressing member is pressed against the semiconductor wafer to separate the semiconductor wafer at the cleavage starting portion. The pressing member includes a tip portion to be pressed on the semiconductor wafer, and the tip portion has a spherical surface.
    Type: Grant
    Filed: June 29, 2016
    Date of Patent: October 30, 2018
    Assignee: NICHIA CORPORATION
    Inventors: Hiroki Okamoto, Hiroaki Tamemoto, Junya Narita
  • Patent number: 10084108
    Abstract: A method for manufacturing a light emitting element that includes preparing a wafer having a substrate and a semiconductor structure, the substrate including a plurality of protrusions at positions corresponding to lattice points on a regular triangular lattice. The method includes forming a plurality of first modified parts in the substrate by irradiating the substrate with a laser beam along first dividing lines, forming a plurality of second modified parts in the substrate by irradiating the substrate with a laser beam along second dividing lines, and dividing the wafer along the first modified parts and the second modified parts to obtain a plurality of light emitting elements.
    Type: Grant
    Filed: March 28, 2017
    Date of Patent: September 25, 2018
    Assignee: NICHIA CORPORATION
    Inventors: Hiroaki Tamemoto, Chihiro Juasa
  • Publication number: 20180247871
    Abstract: A method of manufacturing a semiconductor element includes: providing a wafer having a semiconductor layered body on a sapphire substrate; irradiating a laser light in an interior region of the sapphire substrate to create cracks in the sapphire substrate by performing a first scan to irradiate the laser light at a first depth with a first pulse energy to create a first modified region, and a second scan following the first scan to irradiate the laser light at a second depth with a second pulse energy greater than the first pulse energy along and within the first modified region; and dividing the wafer by extending the cracks to obtain a semiconductor element.
    Type: Application
    Filed: February 22, 2018
    Publication date: August 30, 2018
    Inventors: Naoto INOUE, Sho KUSAKA, Minoru YAMAMOTO, Masayuki IBARAKI, Hiroaki TAMEMOTO
  • Publication number: 20170200855
    Abstract: A method for manufacturing a light emitting element that includes preparing a wafer having a substrate and a semiconductor structure, the substrate including a plurality of protrusions at positions corresponding to lattice points on a regular triangular lattice. The method includes forming a plurality of first modified parts in the substrate by irradiating the substrate with a laser beam along first dividing lines, forming a plurality of second modified parts in the substrate by irradiating the substrate with a laser beam along second dividing lines, and dividing the wafer along the first modified parts and the second modified parts to obtain a plurality of light emitting elements.
    Type: Application
    Filed: March 28, 2017
    Publication date: July 13, 2017
    Inventors: Hiroaki TAMEMOTO, Chihiro JUASA
  • Patent number: 9653644
    Abstract: A method for manufacturing a semiconductor element includes providing a wafer having a sapphire substrate and a semiconductor stacked body disposed on the sapphire substrate, performing a first scanning of a portion of the sapphire substrate in which a laser beam is irradiated into an interior of the sapphire substrate, performing a second scanning of the portion of the sapphire substrate in which a laser beam is irradiated into the interior of the sapphire substrate, the second scanning occurring after the first scanning and before a void is produced in the interior of the sapphire substrate irradiated with the laser beam in the first scanning, and separating the wafer into a plurality of semiconductor elements.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: May 16, 2017
    Assignee: NICHIA CORPORATION
    Inventors: Hiroaki Tamemoto, Ryota Taoka