Patents by Inventor Hiroaki Tamemoto

Hiroaki Tamemoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11289621
    Abstract: A method includes preparing a wafer including a substrate and a semiconductor structure, and irradiating an inner portion of the substrate at a predetermined depth in a thickness direction a plurality of times with laser pulses at a first time interval and a predetermined distance interval between irradiations. Each irradiation performed at the first time intervals in the step of irradiating the substrate with laser pulses includes irradiating the substrate at a first focal position in the thickness direction with a first laser pulse having a first pulse-energy; and after irradiating with the first laser pulse, irradiating the substrate with a second laser pulse performed after a second time interval, the second time interval being shorter than the first time interval and being in a range of 3 ps to 900 ps, and the second laser pulse having a second pulse-energy 0.5 to 1.5 times the first pulse-energy.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: March 29, 2022
    Assignees: NICHIA CORPORATION, IMRA AMERICA, INC.
    Inventors: Minoru Yamamoto, Naoto Inoue, Hiroaki Tamemoto, Yoshitaka Hotta, Hideyuki Ohtake
  • Publication number: 20210036182
    Abstract: A method of manufacturing a light emitting element according to certain embodiments of the present disclosure includes: scanning and irradiating a first laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines collectively in a shape of a tessellation of a plurality of hexagonal shapes in a top view to create a plurality of first modified regions along the predetermined dividing lines; and scanning and irradiating a second laser light having a second irradiation intensity greater than the first irradiation intensity to the sapphire substrate along the predetermined dividing lines to create a plurality of second modified regions overlapping the plurality of first modified regions.
    Type: Application
    Filed: July 31, 2020
    Publication date: February 4, 2021
    Applicant: NICHIA CORPORATION
    Inventors: Masayuki IBARAKI, Minoru YAMAMOTO, Naoto INOUE, Hiroaki TAMEMOTO
  • Publication number: 20210005777
    Abstract: A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.
    Type: Application
    Filed: June 22, 2020
    Publication date: January 7, 2021
    Inventors: Naoto INOUE, Minoru YAMAMOTO, Satoshi OKUMURA, Hiroki OKAMOTO, Hiroaki TAMEMOTO
  • Publication number: 20200365758
    Abstract: A method includes preparing a wafer including a substrate and a semiconductor structure, and irradiating an inner portion of the substrate at a predetermined depth in a thickness direction a plurality of times with laser pulses at a first time interval and a predetermined distance interval between irradiations. Each irradiation performed at the first time intervals in the step of irradiating the substrate with laser pulses includes irradiating the substrate at a first focal position in the thickness direction with a first laser pulse having a first pulse-energy; and after irradiating with the first laser pulse, irradiating the substrate with a second laser pulse performed after a second time interval, the second time interval being shorter than the first time interval and being in a range of 3 ps to 900 ps, and the second laser pulse having a second pulse-energy 0.5 to 1.5 times the first pulse-energy.
    Type: Application
    Filed: November 26, 2018
    Publication date: November 19, 2020
    Applicants: NICHIA CORPORATION, IMRA AMERICA, INC.
    Inventors: Minoru YAMAMOTO, Naoto INOUE, Hiroaki TAMEMOTO, Yoshitaka HOTTA, Hideyuki OHTAKE
  • Patent number: 10672660
    Abstract: A method of manufacturing a semiconductor element includes: providing a wafer having a semiconductor layered body on a sapphire substrate; irradiating a laser light in an interior region of the sapphire substrate to create cracks in the sapphire substrate by performing a first scan to irradiate the laser light at a first depth with a first pulse energy to create a first modified region, and a second scan following the first scan to irradiate the laser light at a second depth with a second pulse energy greater than the first pulse energy along and within the first modified region; and dividing the wafer by extending the cracks to obtain a semiconductor element.
    Type: Grant
    Filed: February 22, 2018
    Date of Patent: June 2, 2020
    Assignee: NICHIA CORPORATION
    Inventors: Naoto Inoue, Sho Kusaka, Minoru Yamamoto, Masayuki Ibaraki, Hiroaki Tamemoto
  • Patent number: 10388827
    Abstract: A method for manufacturing a semiconductor element is provided. The method includes providing a semiconductor wafer including a substrate and a semiconductor structure on the substrate, forming a cleavage starting portion in the semiconductor wafer, and dividing the semiconductor wafer into a plurality of semiconductor elements by transferring a pressing member on the semiconductor wafer in a state where the pressing member is pressed against the semiconductor wafer to separate the semiconductor wafer at the cleavage starting portion. The pressing member includes a tip portion to be pressed on the semiconductor wafer, and the tip portion has a spherical surface.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: August 20, 2019
    Assignee: NICHIA CORPORATION
    Inventors: Hiroki Okamoto, Hiroaki Tamemoto, Junya Narita
  • Publication number: 20190035973
    Abstract: A method for manufacturing a semiconductor element is provided. The method includes providing a semiconductor wafer including a substrate and a semiconductor structure on the substrate, forming a cleavage starting portion in the semiconductor wafer, and dividing the semiconductor wafer into a plurality of semiconductor elements by transferring a pressing member on the semiconductor wafer in a state where the pressing member is pressed against the semiconductor wafer to separate the semiconductor wafer at the cleavage starting portion. The pressing member includes a tip portion to be pressed on the semiconductor wafer, and the tip portion has a spherical surface.
    Type: Application
    Filed: October 2, 2018
    Publication date: January 31, 2019
    Applicant: NICHIA CORPORATION
    Inventors: Hiroki OKAMOTO, Hiroaki TAMEMOTO, Junya NARITA
  • Patent number: 10115857
    Abstract: A method for manufacturing a semiconductor element is provided. The method includes providing a semiconductor wafer including a substrate and a semiconductor structure on the substrate, forming a cleavage starting portion in the semiconductor wafer, and dividing the semiconductor wafer into a plurality of semiconductor elements by transferring a pressing member on the semiconductor wafer in a state where the pressing member is pressed against the semiconductor wafer to separate the semiconductor wafer at the cleavage starting portion. The pressing member includes a tip portion to be pressed on the semiconductor wafer, and the tip portion has a spherical surface.
    Type: Grant
    Filed: June 29, 2016
    Date of Patent: October 30, 2018
    Assignee: NICHIA CORPORATION
    Inventors: Hiroki Okamoto, Hiroaki Tamemoto, Junya Narita
  • Patent number: 10084108
    Abstract: A method for manufacturing a light emitting element that includes preparing a wafer having a substrate and a semiconductor structure, the substrate including a plurality of protrusions at positions corresponding to lattice points on a regular triangular lattice. The method includes forming a plurality of first modified parts in the substrate by irradiating the substrate with a laser beam along first dividing lines, forming a plurality of second modified parts in the substrate by irradiating the substrate with a laser beam along second dividing lines, and dividing the wafer along the first modified parts and the second modified parts to obtain a plurality of light emitting elements.
    Type: Grant
    Filed: March 28, 2017
    Date of Patent: September 25, 2018
    Assignee: NICHIA CORPORATION
    Inventors: Hiroaki Tamemoto, Chihiro Juasa
  • Publication number: 20180247871
    Abstract: A method of manufacturing a semiconductor element includes: providing a wafer having a semiconductor layered body on a sapphire substrate; irradiating a laser light in an interior region of the sapphire substrate to create cracks in the sapphire substrate by performing a first scan to irradiate the laser light at a first depth with a first pulse energy to create a first modified region, and a second scan following the first scan to irradiate the laser light at a second depth with a second pulse energy greater than the first pulse energy along and within the first modified region; and dividing the wafer by extending the cracks to obtain a semiconductor element.
    Type: Application
    Filed: February 22, 2018
    Publication date: August 30, 2018
    Inventors: Naoto INOUE, Sho KUSAKA, Minoru YAMAMOTO, Masayuki IBARAKI, Hiroaki TAMEMOTO
  • Publication number: 20170200855
    Abstract: A method for manufacturing a light emitting element that includes preparing a wafer having a substrate and a semiconductor structure, the substrate including a plurality of protrusions at positions corresponding to lattice points on a regular triangular lattice. The method includes forming a plurality of first modified parts in the substrate by irradiating the substrate with a laser beam along first dividing lines, forming a plurality of second modified parts in the substrate by irradiating the substrate with a laser beam along second dividing lines, and dividing the wafer along the first modified parts and the second modified parts to obtain a plurality of light emitting elements.
    Type: Application
    Filed: March 28, 2017
    Publication date: July 13, 2017
    Inventors: Hiroaki TAMEMOTO, Chihiro JUASA
  • Patent number: 9653644
    Abstract: A method for manufacturing a semiconductor element includes providing a wafer having a sapphire substrate and a semiconductor stacked body disposed on the sapphire substrate, performing a first scanning of a portion of the sapphire substrate in which a laser beam is irradiated into an interior of the sapphire substrate, performing a second scanning of the portion of the sapphire substrate in which a laser beam is irradiated into the interior of the sapphire substrate, the second scanning occurring after the first scanning and before a void is produced in the interior of the sapphire substrate irradiated with the laser beam in the first scanning, and separating the wafer into a plurality of semiconductor elements.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: May 16, 2017
    Assignee: NICHIA CORPORATION
    Inventors: Hiroaki Tamemoto, Ryota Taoka
  • Patent number: 9640714
    Abstract: A method for manufacturing a light emitting element that includes preparing a wafer having a substrate and a semiconductor structure, the substrate including a plurality of protrusions at positions corresponding to lattice points on a triangular lattice. The method includes forming a plurality of first modified parts in the substrate by irradiating the substrate with a laser beam along first dividing lines, forming a plurality of second modified parts in the substrate by irradiating the substrate with a laser beam along second dividing lines, and dividing the wafer along the first modified parts and the second modified parts to obtain a plurality of light emitting elements.
    Type: Grant
    Filed: August 22, 2014
    Date of Patent: May 2, 2017
    Assignee: NICHIA CORPORATION
    Inventors: Hiroaki Tamemoto, Chihiro Juasa
  • Publication number: 20170098733
    Abstract: A method for manufacturing a semiconductor element includes providing a wafer having a sapphire substrate and a semiconductor stacked body disposed on the sapphire substrate, performing a first scanning of a portion of the sapphire substrate in which a laser beam is irradiated into an interior of the sapphire substrate, performing a second scanning of the portion of the sapphire substrate in which a laser beam is irradiated into the interior of the sapphire substrate, the second scanning occurring after the first scanning and before a void is produced in the interior of the sapphire substrate irradiated with the laser beam in the first scanning, and separating the wafer into a plurality of semiconductor elements.
    Type: Application
    Filed: September 29, 2016
    Publication date: April 6, 2017
    Inventors: Hiroaki TAMEMOTO, Ryota TAOKA
  • Publication number: 20170005225
    Abstract: A method for manufacturing a semiconductor element is provided. The method includes providing a semiconductor wafer including a substrate and a semiconductor structure on the substrate, forming a cleavage starting portion in the semiconductor wafer, and dividing the semiconductor wafer into a plurality of semiconductor elements by transferring a pressing member on the semiconductor wafer in a state where the pressing member is pressed against the semiconductor wafer to separate the semiconductor wafer at the cleavage starting portion. The pressing member includes a tip portion to be pressed on the semiconductor wafer, and the tip portion has a spherical surface.
    Type: Application
    Filed: June 29, 2016
    Publication date: January 5, 2017
    Applicant: NICHIA CORPORATION
    Inventors: Hiroki OKAMOTO, Hiroaki TAMEMOTO, Junya NARITA
  • Patent number: 9324791
    Abstract: A semiconductor element includes a substrate and a semiconductor layer. The substrate has a first main face and a second main face. The semiconductor layer is formed on a side of one of the first main face and the second main face of the substrate. The substrate has a plurality of isolated processed portions and an irregularity face that runs from the processed portions at least to the first main face of the substrate and links adjacent ones of the processed portions.
    Type: Grant
    Filed: April 10, 2014
    Date of Patent: April 26, 2016
    Assignee: NICHIA CORPORATION
    Inventor: Hiroaki Tamemoto
  • Publication number: 20150357514
    Abstract: A method for manufacturing a light emitting element includes: preparing a wafer that has a substrate in which a first main face is provided with a plurality of convex components; and dividing the wafer along first dividing lines and second dividing lines. The convex components are in the form of circular cones or truncated circular cones, each of which having a circular bottom face and a side face that is connected to the bottom face, and disposed regularly so that a plurality of bounded regions are present around the convex components, and a shortest distance between the convex components and the centers of the bounded regions is less than a radius of the bottom faces of the convex components. The first and second dividing lines extend in a direction that intersects straight lines that link the centers of the plurality of bounded regions around a single convex component.
    Type: Application
    Filed: August 19, 2015
    Publication date: December 10, 2015
    Inventor: Hiroaki TAMEMOTO
  • Patent number: 9209351
    Abstract: A method for manufacturing a light emitting element includes: preparing a wafer that has a substrate in which a first main face is provided with a plurality of convex components; and dividing the wafer along first dividing lines and second dividing lines. The convex components are in the form of circular cones or truncated circular cones, each of which having a circular bottom face and a side face that is connected to the bottom face, and disposed regularly so that a plurality of bounded regions are present around the convex components, and a shortest distance between the convex components and the centers of the bounded regions is less than a radius of the bottom faces of the convex components. The first and second dividing lines extend in a direction that intersects straight lines that link the centers of the plurality of bounded regions around a single convex component.
    Type: Grant
    Filed: August 19, 2015
    Date of Patent: December 8, 2015
    Assignee: NICHIA CORPORATION
    Inventor: Hiroaki Tamemoto
  • Patent number: 9142712
    Abstract: A method for manufacturing a light emitting element, including steps of preparing a wafer that has a substrate with a first main face and a second main face, in which the first main face is provided with a plurality of convex components and valleys that connect these convex components, and a semiconductor structure that is provided on the first main face; and dividing the wafer by laser scribing in which a laser beam is emitted from the second main face side along first dividing lines and second dividing lines to obtain a plurality of light emitting elements. The convex components are in the form of pyramids, prisms, or truncated pyramids, each of which having a polyhedral bottom face with a plurality of apexes, edge lines that extend from the apexes, and side faces that link the edge lines to each other.
    Type: Grant
    Filed: December 1, 2014
    Date of Patent: September 22, 2015
    Assignee: NICHIA CORPORATION
    Inventor: Hiroaki Tamemoto
  • Publication number: 20150155431
    Abstract: A method for manufacturing a light emitting element, including steps of preparing a wafer that has a substrate with a first main face and a second main face, in which the first main face is provided with a plurality of convex components and valleys that connect these convex components, and a semiconductor structure that is provided on the first main face; and dividing the wafer by laser scribing in which a laser beam is emitted from the second main face side along first dividing lines and second dividing lines to obtain a plurality of light emitting elements. The convex components are in the form of pyramids, prisms, or truncated pyramids, each of which having a polyhedral bottom face with a plurality of apexes, edge lines that extend from the apexes, and side faces that link the edge lines to each other.
    Type: Application
    Filed: December 1, 2014
    Publication date: June 4, 2015
    Inventor: Hiroaki TAMEMOTO