Abstract: This laser processing apparatus is for forming modified regions in an object, which includes a sapphire substrate having a C-plane as a main surface, along cutting lines by focusing laser light on the object, and is provided with a laser light source, a spatial light modulator, and a focusing optical system. The spatial light modulator performs aberration correction by a first aberration correction amount smaller than an ideal aberration correction amount when the modified region is formed along a first cutting line along an a-axis direction of the sapphire substrate, and performs aberration correction by a second aberration correction amount smaller than the ideal aberration correction amount and different from the first aberration correction amount when the modified region is formed along a second cutting line along an m-axis direction of the sapphire substrate.

Abstract: A plant treatment apparatus includes: a plant holding unit; an ultraviolet irradiation unit configured to irradiate a plant held by the plant holding unit with light comprising ultraviolet light in a wavelength range of no less than 270 nm and no more than 290 nm; and either (i) a plant immersion unit configured to immerse the plant held by the plant holding unit into a liquid that comprises water and is held by the plant immersion unit, or (ii) a liquid ejection unit that ejects the liquid towards the plant held by the plant holding unit.

Abstract: A method of manufacturing an optical member includes: providing a polycrystalline wavelength conversion member including phosphor particles and having a first surface and a second surface opposite to the first surface; forming a modified portion inside the wavelength conversion member by focusing laser light inside the wavelength conversion member; and cleaving the wavelength conversion member with the modified portion being a starting point, which includes pressing the wavelength conversion member from a first surface side.

Abstract: A method for transferring a light-emitting element from a first substrate to a second substrate includes: providing the light-emitting element fixed to a first surface of the first substrate via a release layer; and removing the release layer by irradiating the release layer with laser light from a side of the second surface, opposite the first surface, through the first substrate. An intensity distribution of the laser light on the first surface is, in the entire release layer, equal to or higher than a minimum intensity at which the release layer can be removed, and a maximum intensity of the intensity distribution is 150% or less of the minimum intensity.

Abstract: A manufacturing method of a resin component includes: providing a first resin member containing a polymer and a second resin member containing a polymer; and joining a first joining portion of the first resin member and a second joining portion of the second resin member to each other. The joining of the first resin member and the second resin member to each other includes irradiating the first joining portion of the first resin member with a laser light having a peak wavelength in a range from 350 nm to 420 nm is emitted in a presence of oxygen so as to cause multiphoton excitation of the first joining portion of the first resin member.

Abstract: A method of manufacturing a semiconductor element includes irradiating a laser beam on a wafer, which includes a sapphire substrate having a first face and a second face opposite the first face and a semiconductor structure disposed on the first face, from a second face side. The laser beam irradiated along a first direction parallel to the second face of the sapphire substrate is focused inside the sapphire substrate to thereby create a modified portion in the sapphire substrate along the first direction. The wafer is severed and separated into a number of semiconductor elements following the formation of a modified portion. In the step of forming a modified portion, the laser beam is focused closer to the second face than to the first face in a thickness direction of the sapphire substrate.

Abstract: A method for processing a resin member includes: irradiating a first member comprising a resin with first light of a first wavelength that causes electronic excitation of the resin; and irradiating the resin electronically excited through irradiation with the first light with second light of a second wavelength longer than the first wavelength. A wavelength range of the second wavelength is within a wavelength range in which light absorption of the resin increases through electronic excitation of the resin.

Abstract: A method for producing a resin part includes: preparing an intermediate body comprising a first member and a second member, the first member containing a resin; and welding the first member with the second member by performing scanning of the intermediate body with a first laser beam and a second laser beam. In the welding of the first member with the second member, the scanning with the first laser beam and the second laser beam is performed in a state in which a center of a second spot is located on a rear side in a direction of the scanning with the first laser beam and the second laser beam as compared to a center of a first spot while at least a part of the first spot and at least a part of the second spot overlap with each other.

Abstract: A method of producing a semiconductor device, the method includes steps of: detecting a defect included in a semiconductor layer; forming a metal film on the semiconductor layer; after forming the metal film on the semiconductor layer, exposing the semiconductor layer through the metal film by removing a portion of the metal film by irradiation with a first laser emitting red or infrared light; and after the step of exposing the semiconductor layer, removing a portion of the semiconductor layer by irradiation with a second laser emitting ultraviolet light, said portion of the semiconductor layer including the defect. A diameter of said portion of the metal film is greater than a diameter of said portion of the semiconductor layer in a plan view. Said portion of the metal film overlaps with said portion of the semiconductor layer in the plan view.

Abstract: A method of manufacturing a light emitting element according to certain embodiments of the present disclosure includes: scanning and irradiating a first laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines collectively in a shape of a tessellation of a plurality of hexagonal shapes in a top view to create a plurality of first modified regions along the predetermined dividing lines; and scanning and irradiating a second laser light having a second irradiation intensity greater than the first irradiation intensity to the sapphire substrate along the predetermined dividing lines to create a plurality of second modified regions overlapping the plurality of first modified regions.

Abstract: A method for manufacturing a light-emitting element includes preparing a wafer; a laser beam irradiation process; and a separation process. The laser beam irradiation process includes a first irradiation process of forming a plurality of first modified portions, and a second irradiation process of forming a plurality of second modified portions. The second modified portions are formed in the second irradiation process so that a length in a thickness direction of the sapphire substrate of the second modified portions is greater than a length in the thickness direction of the first modified portions.

Abstract: This laser processing apparatus is for forming modified regions in an object, which includes a sapphire substrate having a C-plane as a main surface, along cutting lines by focusing laser light on the object, and is provided with a laser light source, a spatial light modulator, and a focusing optical system. The spatial light modulator performs aberration correction by a first aberration correction amount smaller than an ideal aberration correction amount when the modified region is formed along a first cutting line along an a-axis direction of the sapphire substrate, and performs aberration correction by a second aberration correction amount smaller than the ideal aberration correction amount and different from the first aberration correction amount when the modified region is formed along a second cutting line along an in-axis direction of the sapphire substrate.

Abstract: A plant treatment apparatus includes: a plant holding unit; an ultraviolet irradiation unit configured to irradiate a plant held by the plant holding unit with light comprising ultraviolet light in a wavelength range of no less than 270 nm and no more than 290 nm; and either (i) a plant immersion unit configured to immerse the plant held by the plant holding unit into a liquid that comprises water and is held by the plant immersion unit, or (ii) a liquid ejection unit that ejects the liquid towards the plant held by the plant holding unit.

Abstract: A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.

Abstract: A method for processing a resin member includes: irradiating a first member comprising a resin with first light of a first wavelength that causes electronic excitation of the resin; and irradiating the resin electronically excited through irradiation with the first light with second light of a second wavelength longer than the first wavelength. A wavelength range of the second wavelength is within a wavelength range in which light absorption of the resin increases through electronic excitation of the resin.

Abstract: A method includes preparing a wafer including a substrate and a semiconductor structure, and irradiating an inner portion of the substrate at a predetermined depth in a thickness direction a plurality of times with laser pulses at a first time interval and a predetermined distance interval between irradiations. Each irradiation performed at the first time intervals in the step of irradiating the substrate with laser pulses includes irradiating the substrate at a first focal position in the thickness direction with a first laser pulse having a first pulse-energy; and after irradiating with the first laser pulse, irradiating the substrate with a second laser pulse performed after a second time interval, the second time interval being shorter than the first time interval and being in a range of 3 ps to 900 ps, and the second laser pulse having a second pulse-energy 0.5 to 1.5 times the first pulse-energy.

Abstract: A method of manufacturing a light emitting element according to certain embodiments of the present disclosure includes: scanning and irradiating a first laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines collectively in a shape of a tessellation of a plurality of hexagonal shapes in a top view to create a plurality of first modified regions along the predetermined dividing lines; and scanning and irradiating a second laser light having a second irradiation intensity greater than the first irradiation intensity to the sapphire substrate along the predetermined dividing lines to create a plurality of second modified regions overlapping the plurality of first modified regions.

Abstract: A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.

Abstract: A method includes preparing a wafer including a substrate and a semiconductor structure, and irradiating an inner portion of the substrate at a predetermined depth in a thickness direction a plurality of times with laser pulses at a first time interval and a predetermined distance interval between irradiations. Each irradiation performed at the first time intervals in the step of irradiating the substrate with laser pulses includes irradiating the substrate at a first focal position in the thickness direction with a first laser pulse having a first pulse-energy; and after irradiating with the first laser pulse, irradiating the substrate with a second laser pulse performed after a second time interval, the second time interval being shorter than the first time interval and being in a range of 3 ps to 900 ps, and the second laser pulse having a second pulse-energy 0.5 to 1.5 times the first pulse-energy.

Abstract: A method of manufacturing a semiconductor element includes: providing a wafer having a semiconductor layered body on a sapphire substrate; irradiating a laser light in an interior region of the sapphire substrate to create cracks in the sapphire substrate by performing a first scan to irradiate the laser light at a first depth with a first pulse energy to create a first modified region, and a second scan following the first scan to irradiate the laser light at a second depth with a second pulse energy greater than the first pulse energy along and within the first modified region; and dividing the wafer by extending the cracks to obtain a semiconductor element.