Patents by Inventor Hiroaki Uozumi

Hiroaki Uozumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Image processing device, image processing method, program, and evaluation method
    Patent number: 11953498
    Abstract: An image processing device includes: a processor; and a memory encoded with instructions executed by the processor, including: imaging pluripotent stem cells with time in a culture process and acquiring a plurality of images, extracting a colony region of the cells from the image, extracting a high luminance region on the basis of a group of pixels with larger luminance values than a standard value from among pixels constituting the image, extracting an extraction target region with relatively high contrast in the colony region on the basis of the colony and high luminance regions, and outputting the extraction target region as an extraction result, wherein as a relationship among the colony, high luminance, and extraction target regions, the colony region is formed, the high luminance region is then formed therein, and the extraction target region is then formed in the high luminance region in the culture process of the cells.
    Type: Grant
    Filed: April 12, 2021
    Date of Patent: April 9, 2024
    Assignee: NIKON CORPORATION
    Inventors: Tomoro Dan, Hiroaki Kii, Takayuki Uozumi, Yasujiro Kiyota
  • Semiconductor device having heat detecting element and insulating cavity and method of manufacturing thereof
    Patent number: 6617659
    Abstract: The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.
    Type: Grant
    Filed: February 18, 2003
    Date of Patent: September 9, 2003
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hiroyoshi Komobuchi, Yoshikazu Chatani, Takahiro Yamada, Rieko Nishio, Hiroaki Uozumi, Masayuki Masuyama, Takumi Yamaguchi
  • SEMICONDUCTOR DEVICE HAVING HEAT DETECTING ELEMENT AND INSULATING CAVITY AND MEHTOD OF MANUFACTURING THEREOF
    Publication number: 20030151106
    Abstract: The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.
    Type: Application
    Filed: February 18, 2003
    Publication date: August 14, 2003
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO.
    Inventors: Hiroyoshi Komobuchi, Yoshikazu Chatani, Takahiro Yamada, Rieko Nishio, Hiroaki Uozumi, Masayuki Masuyama, Takumi Yamaguchi
  • Semiconductor device having heat detecting element and insulating cavity and method of manufacturing the same
    Patent number: 6548879
    Abstract: The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.
    Type: Grant
    Filed: June 29, 2001
    Date of Patent: April 15, 2003
    Inventors: Hiroyoshi Komobuchi, Yoshikazu Chatani, Takahiro Yamada, Rieko Nishio, Hiroaki Uozumi, Masayuki Masuyama, Takumi Yamaguchi
  • Semiconductor device and method of manufacturing the same
    Publication number: 20020055203
    Abstract: The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.
    Type: Application
    Filed: June 29, 2001
    Publication date: May 9, 2002
    Inventors: Hiroyoshi Komobuchi, Yoshikazu Chatani, Takahiro Yamada, Rieko Nishio, Hiroaki Uozumi, Masayuki Masuyama, Takumi Yamaguchi