Patents by Inventor Hiroaki Yaguchi
Hiroaki Yaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11884839Abstract: An acetal-protected polysiloxane composition, used as a photosensitive composition and a coating composition for forming a flat film on a substrate to be processed for performing pattern reversal. A coating composition or photosensitive composition including: a polysiloxane obtained from a hydrolysis-condensation product of a hydrolyzable silane having 2 to 4 hydrolyzable groups in a molecule by protecting the condensation product's silanol groups with acetal groups, wherein in the hydrolysis-condensation product, an organic group bonded to silicon atoms through Si—C bonds exists in molar ratio of 0?(organic group)/(Si)?0.29 on average.Type: GrantFiled: August 28, 2017Date of Patent: January 30, 2024Assignee: NISSAN CHEMICAL CORPORATIONInventors: Yuki Endo, Hiroaki Yaguchi, Makoto Nakajima
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Patent number: 11609499Abstract: A composition for flattening uneven substrates. The composition for flattening uneven substrates, which is applied on an organic pattern, includes a solvent and a polysiloxane including a hydrolysis condensate of a hydrolyzable silane, wherein the polysiloxane includes silanol groups in a proportion of 20 mol % or less with respect to Si atoms, and the weight-average molecular weight of the polysiloxane is 1,000-50,000.Type: GrantFiled: February 10, 2017Date of Patent: March 21, 2023Assignee: NISSAN CHEMICAL CORPORATIONInventors: Shuhei Shigaki, Hiroaki Yaguchi, Makoto Nakajima
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Patent number: 11268894Abstract: A flow cell includes a body and a flow channel. The body is formed out of blocks made of an uniaxial crystal material and joined to one another. The flow channel is formed inside the body, so that the flow cell is configured to be used to measure particles passing through the flow channel based on reception of scattered light generated from the particles. A crystallographic c-axis in a predetermined part of the body is configured to being substantially perpendicular to both a receiving direction and a polarization direction of the scattered light.Type: GrantFiled: December 24, 2020Date of Patent: March 8, 2022Assignee: RION CO., LTD.Inventors: Hiroaki Yaguchi, Yuki Yamakawa, Masaki Shimmura, Tomonobu Matsuda
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Publication number: 20210199558Abstract: A flow cell includes a body and a flow channel. The body is formed out of blocks made of an uniaxial crystal material and joined to one another. The flow channel is formed inside the body, so that the flow cell is configured to be used to measure particles passing through the flow channel based on reception of scattered light generated from the particles. A crystallographic c-axis in a predetermined part of the body is configured to being substantially perpendicular to both a receiving direction and a polarization direction of the scattered light.Type: ApplicationFiled: December 24, 2020Publication date: July 1, 2021Inventors: Hiroaki YAGUCHI, Yuki YAMAKAWA, Masaki SHIMMURA, Tomonobu MATSUDA
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Publication number: 20210060528Abstract: A metal adsorption agent including a chelating agent (A) and a chelating agent (B), wherein the chelating agent (A) is a metal adsorption agent containing a carrier having a glucamine-type functional group, and the chelating agent (B) is a metal adsorption agent containing a carrier having a thiol group, a thiourea group, an amino group, a triazabicyclodecene-inducing group, a thiouronium group, an imidazole group, a sulfonate group, a hydroxy group, an aminoacetate group, an amidoxime group, an aminophosphate group, or any combination of these groups. The carrier of each of the chelating agent (A) and the chelating agent (B) may be silica, a silica component-containing substance, polystyrene, or crosslinked porous polystyrene. The solution may contain water or an organic solvent.Type: ApplicationFiled: December 25, 2018Publication date: March 4, 2021Applicant: NISSAN CHEMICAL CORPORATIONInventors: Hiroaki YAGUCHI, Shun KUBODERA, Gun SON
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Patent number: 10910220Abstract: A method for flatly covering a semiconductor substrate using a silicon-containing composition. A method for producing a polysiloxane-coated substrate, including a first step for forming a first polysiloxane coating film by applying a first polysiloxane composition for coating to a stepped substrate and firing the composition thereon and a second step for forming a second film by applying a second polysiloxane composition for coating to the first film and firing the composition thereon. The second film has an Iso-dense bias of 50 nm or less; the first polysiloxane contains a hydrolysis-condensation product of a hydrolyzable silane starting material containing a first hydrolyzable silane having four hydrolyzable groups in each molecule at a ratio of 0-100% by mole in all the silanes; and the second polysiloxane contains silanol groups at a ratio of 30% by mole or less relative to Si atoms, while having a weight average molecular weight of 1,000-50,000.Type: GrantFiled: February 10, 2017Date of Patent: February 2, 2021Assignee: NISSAN CHEMICAL CORPORATIONInventors: Shuhei Shigaki, Hiroaki Yaguchi, Makoto Nakajima
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Patent number: 10558119Abstract: The invention provides a composition for coating a resist pattern and reversing the pattern by utilizing a difference in etching rates. A composition for applying to a resist pattern includes a component (A) which is at least one compound selected from the group consisting of a metal oxide (a1), a polyacid (a2), a polyacid salt (a3), a hydrolyzable silane (a4), a hydrolysis product (a5) of the hydrolyzable silane, and a hydrolysis condensate (a6) of the hydrolyzable silane; and a component (B), which is an aqueous solvent, in which the hydrolyzable silane (a4) is (i) a hydrolyzable silane containing an organic group having an amino group, (ii) a hydrolyzable silane containing an organic group having an ionic functional group, (iii) a hydrolyzable silane containing an organic group having hydroxy group, or (iv) a hydrolyzable silane containing an organic group having a functional group convertible to hydroxy group.Type: GrantFiled: May 20, 2016Date of Patent: February 11, 2020Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Wataru Shibayama, Makoto Nakajima, Shuhei Shigaki, Hiroaki Yaguchi, Rikimaru Sakamoto
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Patent number: 10508174Abstract: A composition applied over a resist pattern includes a modified polysiloxane in which some of silanol groups of a polysiloxane containing a hydrolysis condensate of a hydrolyzable silane are capped, and a solvent, wherein a ratio of silanol groups to all Si atoms contained in the modified polysiloxane is 40 mol % or less. The modified polysiloxane ratio of the silanol groups is adjusted to a desired ratio by reacting the silanol groups of the polysiloxane with an alcohol. A method for producing a semiconductor device having the steps of forming a resist film on a substrate, forming a resist pattern by exposing and developing the resist film, applying the composition over the resist pattern during or after development, and reversing a pattern by removing the resist pattern by etching.Type: GrantFiled: August 26, 2016Date of Patent: December 17, 2019Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Shuhei Shigaki, Hiroaki Yaguchi, Makoto Nakajima
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Publication number: 20190339618Abstract: A composition for flattening uneven substrates. The composition for flattening uneven substrates, which is applied on an organic pattern, includes a solvent and a polysiloxane including a hydrolysis condensate of a hydrolyzable silane, wherein the polysiloxane includes silanol groups in a proportion of 20 mol % or less with respect to Si atoms, and the weight-average molecular weight of the polysiloxane is 1,000-50,000.Type: ApplicationFiled: February 10, 2017Publication date: November 7, 2019Applicant: NISSAN CHEMICAL CORPORATIONInventors: Shuhei SHIGAKI, Hiroaki YAGUCHI, Makoto NAKAJIMA
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Publication number: 20190292403Abstract: A coating composition for pattern inversion that fills a gap in an organic underlayer film pattern formed on a substrate to be processed by transferring a resist pattern to an underlayer and forms a flat polysiloxane film, the coating composition including a polysiloxane obtained by a reaction of an alcohol with a silanol group in a hydrolysis-condensate of a hydrolysable silane having a hydrolysable silane containing in the molecule four hydrolysable groups, in a ratio of 50% by mole to 100% by mole relative to the total amount of silanes. The hydrolysable silane is represented by Formula (1): R1aSi(R2)4-a??Formula (1) and contains 50% by mole to 100% by mole of a hydrolysable silane in which a is 0 and 0% by mole to 50% by mole of a hydrolysable silane in which a is 1 or 2. The alcohol is propylene glycol monomethyl ether, propylene glycol monoethyl ether, or 3-methoxybutanol.Type: ApplicationFiled: October 2, 2017Publication date: September 26, 2019Applicant: NISSAN CHEMICAL CORPORATIONInventors: Hiroaki YAGUCHI, Makoto NAKAJIMA, Yuki ENDO, Wataru SHIBAYAMA, Shuhei SHIGAKI
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Publication number: 20190185707Abstract: An acetal-protected polysiloxane composition, used as a photosensitive composition and a coating composition for forming a flat film on a substrate to be processed for performing pattern reversal. A coating composition or photosensitive composition including: a polysiloxane obtained from a hydrolysis-condensation product of a hydrolyzable silane having 2 to 4 hydrolyzable groups in a molecule by protecting the condensation product's silanol groups with acetal groups, wherein in the hydrolysis-condensation product, an organic group bonded to silicon atoms through Si—C bonds exists in molar ratio of 0?(organic group)/(Si)?0.29 on average.Type: ApplicationFiled: August 28, 2017Publication date: June 20, 2019Applicant: NISSAN CHEMICAL CORPORATIONInventors: Yuki ENDO, Hiroaki YAGUCHI, Makoto NAKAJIMA
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Publication number: 20190051518Abstract: A method for flatly covering a semiconductor substrate using a silicon-containing composition. A method for producing a polysiloxane-coated substrate, including a first step for forming a first polysiloxane coating film by applying a first polysiloxane composition for coating to a stepped substrate and firing the composition thereon and a second step for forming a second film by applying a second polysiloxane composition for coating to the first film and firing the composition thereon. The second film has an Iso-dense bias of 50 nm or less; the first polysiloxane contains a hydrolysis-condensation product of a hydrolyzable silane starting material containing a first hydrolyzable silane having four hydrolyzable groups in each molecule at a ratio of 0-100% by mole in all the silanes; and the second polysiloxane contains silanol groups at a ratio of 30% by mole or less relative to Si atoms, while having a weight average molecular weight of 1,000-50,000.Type: ApplicationFiled: February 10, 2017Publication date: February 14, 2019Applicant: NISSAN CHEMICAL CORPORATIONInventors: Shuhei SHIGAKI, Hiroaki YAGUCHI, Makoto NAKAJIMA
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Publication number: 20190040207Abstract: A composition applied over a resist pattern includes a modified polysiloxane in which some of silanol groups of a polysiloxane containing a hydrolysis condensate of a hydrolyzable silane are capped, and a solvent, wherein a ratio of silanol groups to all Si atoms contained in the modified polysiloxane is 40 mol % or less. The modified polysiloxane ratio of the silanol groups is adjusted to a desired ratio by reacting the silanol groups of the polysiloxane with an alcohol. A method for producing a semiconductor device having the steps of forming a resist film on a substrate, forming a resist pattern by exposing and developing the resist film, applying the composition over the resist pattern during or after development, and reversing a pattern by removing the resist pattern by etching.Type: ApplicationFiled: August 26, 2016Publication date: February 7, 2019Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Shuhei SHIGAKI, Hiroaki YAGUCHI, Makoto NAKAJIMA
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Patent number: 10139729Abstract: A resin composition for pattern reversal can be embedded between traces of the pattern of a stepped substrate formed on the substrate to be processed and can form a smooth film. A polysiloxane composition for coating used in the steps of forming an organic underlayer film on a semiconductor substrate, applying a silicon hard mask-forming composition onto the underlayer film and baking the applied silicon hard mask-forming composition to form a silicon hard mask, applying a resist composition onto the silicon mask to form a resist film, exposing the resist film to light and developing the resist film after exposure to give a resist pattern, etching the silicon mask, etching the underlayer film, applying the polysiloxane composition for coating onto the patterned organic underlayer film to expose an upper surface of the underlayer film by etch back, and etching the underlayer film to reverse the pattern.Type: GrantFiled: August 11, 2015Date of Patent: November 27, 2018Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Hiroaki Yaguchi, Makoto Nakajima, Wataru Shibayama, Satoshi Takeda, Hiroyuki Wakayama, Rikimaru Sakamoto
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Publication number: 20180149977Abstract: The invention provides a composition for coating a resist pattern and reversing the pattern by utilizing a difference in etching rates. A composition for applying to a resist pattern includes a component (A) which is at least one compound selected from the group consisting of a metal oxide (a1), a polyacid (a2), a polyacid salt (a3), a hydrolyzable silane (a4), a hydrolysis product (a5) of the hydrolyzable silane, and a hydrolysis condensate (a6) of the hydrolyzable silane; and a component (B), which is an aqueous solvent, in which the hydrolyzable silane (a4) is (i) a hydrolyzable silane containing an organic group having an amino group, (ii) a hydrolyzable silane containing an organic group having an ionic functional group, (iii) a hydrolyzable silane containing an organic group having hydroxy group, or (iv) a hydrolyzable silane containing an organic group having a functional group convertible to hydroxy group.Type: ApplicationFiled: May 20, 2016Publication date: May 31, 2018Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Wataru SHIBAYAMA, Makoto NAKAJIMA, Shuhei SHIGAKI, Hiroaki YAGUCHI, Rikimaru SAKAMOTO
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Publication number: 20170271151Abstract: A resin composition for pattern reversal can be embedded between traces of the pattern of a stepped substrate formed on the substrate to be processed and can form a smooth film. A polysiloxane composition for coating used in the steps of forming an organic underlayer film on a semiconductor substrate, applying a silicon hard mask-forming composition onto the underlayer film and baking the applied silicon hard mask-forming composition to form a silicon hard mask, applying a resist composition onto the silicon mask to form a resist film, exposing the resist film to light and developing the resist film after exposure to give a resist pattern, etching the silicon mask, etching the underlayer film, applying the polysiloxane composition for coating onto the patterned organic underlayer film to expose an upper surface of the underlayer film by etch back, and etching the underlayer film to reverse the pattern.Type: ApplicationFiled: August 11, 2015Publication date: September 21, 2017Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Hiroaki YAGUCHI, Makoto NAKAJIMA, Wataru SHIBAYAMA, Satoshi TAKEDA, Hiroyuki WAKAYAMA, Rikimaru SAKAMOTO
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Patent number: 9627217Abstract: There is provided a composition for forming an EUV resist underlayer film which shows a good resit form. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (A) containing a hydrolyzed condensate of hydrolyzable silane (a); and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (B) containing a hydrolyzed condensate of hydrolyzable silane (a) and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. The polysiloxane (A) is preferably a co-hydrolyzed condensate of a tetraalkoxysilane, an alkyltrialkoxysilane and an aryltrialkoxysilane.Type: GrantFiled: February 22, 2013Date of Patent: April 18, 2017Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Shuhei Shigaki, Hiroaki Yaguchi, Wataru Shibayama, Rikimaru Sakamoto, BangChing Ho
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Patent number: 9337052Abstract: A resist underlayer film forming composition for EUV lithography, comprising: as a silane, a hydrolyzable silane, a hydrolyzate of the hydrolyzable silane, a hydrolysis condensate of the hydrolyzable silane, or a mixture of any of the hydrolyzable silane, the hydrolyzate, and the hydrolysis condensate, wherein the hydrolyzable silane includes a combination of tetramethoxysilane, an alkyltrimethoxysilane, and an aryltrialkoxysilane, and the aryltrialkoxysilane is represented by formula (1): (R2)n2—R1—(CH2)n1—Si(X)3??Formula (1) In formula (1), R1 is an aromatic ring consisting of a benzene ring or a naphthalene ring or a ring including an isocyanuric acid structure, R2 is a substituent replacing a hydrogen atom on the aromatic ring and is a halogen atom or a C1-10 alkoxy group, and X is a C1-10 alkoxy group, a C2-10 acyloxy group, or a halogen group.Type: GrantFiled: October 2, 2012Date of Patent: May 10, 2016Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Shuhei Shigaki, Hiroaki Yaguchi, Rikimaru Sakamoto, Bang-ching Ho
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Patent number: 9165781Abstract: There is provided a silicon-containing composition for forming a pattern reversal film that can be reworked by an organic solvent that is normally used for the removal of resist patterns. A composition for forming a pattern reversal film, characterized by comprising: polysiloxane; an additive; and an organic solvent, wherein the polysiloxane has a structural unit of Formula (1) and a structural unit of Formula (2): (where R1 is a C1-8 alkyl group), and (where R2 is an acryloyloxy group or a methacryloyloxy group; and n is an integer of 2 to 4), and the additive is an organic acid having at least two of a carboxy group and/or a hydroxy group; and a pattern reversal film and a method for forming a reversal pattern by use of the composition.Type: GrantFiled: February 24, 2012Date of Patent: October 20, 2015Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Yasushi Sakaida, Hiroaki Yaguchi
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Publication number: 20150079792Abstract: There is provided a composition for forming an EUV resist underlayer film which shows a good resit form. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (A) containing a hydrolyzed condensate of hydrolyzable silane (a); and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (B) containing a hydrolyzed condensate of hydrolyzable silane (a) and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. The polysiloxane (A) is preferably a co-hydrolyzed condensate of a tetraalkoxysilane, an alkyltrialkoxysilane and an aryltrialkoxysilane.Type: ApplicationFiled: February 22, 2013Publication date: March 19, 2015Inventors: Shuhei Shigaki, Hiroaki Yaguchi, Wataru Shibayama, Rikimaru Sakamoto, BangChing Ho