Abstract: To provide a p-type semiconductor material having a band matching with a hole injection layer and suitable for an anode electrode that can be formed on a glass substrate or a polymer substrate, and to provide a semiconductor device. In the p-type semiconductor material, 1×1018 to 5×1020 cm?3 of Ag is contained in a compound containing Zn and Se, and the semiconductor device includes a substrate and a p-type electrode layer arranged on this substrate and having the aforementioned p-type semiconductor material.

Abstract: To provide a p-type semiconductor material having a band matching with a hole injection layer and suitable for an anode electrode that can be formed on a glass substrate or a polymer substrate, and to provide a semiconductor device. In the p-type semiconductor material, 1×1018 to 5×1020 cm?3 of Ag is contained in a compound containing Zn and Se, and the semiconductor device includes a substrate and a p-type electrode layer arranged on this substrate and having the aforementioned p-type semiconductor material.

Abstract: A platen for electrostatic wafer clamping apparatus comprising a platen body of dielectric material and grains of electrically conductive material diffused in the dielectric material so that the platen has a relatively large electrostatic capacitance due to the diffusion of the conductive grains with the result that the platen provides an increased clamping force regardless of humidity. In accordance with another aspect of the invention, the thickness of the platen body can be decreased by an amount sufficient to maintain a constant clamping force with reduced applied voltage, to eliminate any residual voltage on the platen and to increase the speed of wafer release. The grains of electrically conductive material are present in an amount of from about 2.5 percent to about 15.0 percent of the volume of the platen body, and the grains of electrically conductive material are selected from the group consisting of carbonated transition metals, nitrified transition metals and carbonated grains.

Abstract: A platen for electrostatic wafer clamping apparatus comprising a platen body of dielectric material and grains of electrically conductive material diffused in the dielectric material so that the platen has a relatively large electrostatic capacitance due to the diffusion of the conductive grains with the result that the platen provides an increased clamping force regardless of humidity. In accordance with another aspect of the invention, the thickness of the platen body can be decreased by an amount sufficient to maintain a constant clamping force with reduced applied voltage, to eliminate any residual voltage on the platen and to increase the speed of wafer release. The grains of electrically conductive material are present in an amount of from about 2.5 percent to about 15.0 percent of the volume of the platen body, and the grains of electrically conductive material are selected from the group consisting of carbonated transition metals, nitrified transition metals and carbonated grains.

Abstract: A piezoelectric actuator subjected to bending displacement by sensing a reducing gas is composed of two regions bonded to each other, one of the regions being made of a material whose electric resistance varies by sensing a reducing gas, and the other of the regions being made of a piezoelectric material which is not sensitive to a reducing gas, an electrode being formed on an outer surface of each region to apply an electric field to the piezoelectric material.

Abstract: The object of the present invention is to provide a maximum value storage sensor when detecting the maximum strain by generating an invariable electrical resistance change correlative to the strain of the detection object in a conductive body having a plurality of conductive elements. The maximum value storage sensor of the present invention has; a conductive body having a circuit which gives correlative resistance changes corresponding to the sequential cutoff of a plurality of conductive elements each having a given electrical resistance arrayed in parallel; a cutting means for cutting the conductive elements of the conductive body; and a structure for allowing one of the conductive bodies and the cutting means to move relatively to each other.

Abstract: P-type semiconductor 15 and n-type semiconductor 16 are formed as thick films or spray-coated onto electrodes 13 and 14 on top of substrates 11 and 12, with films of p-type semiconductor 15 and n-type semiconductor 16 being formed in such manner that they are in mutual contact. If a gas to be detected is introduced to the contact region while a bias voltage is being applied between the two electrodes, an output will be obtained in accordance with the concentration of flammable gas components in the gas being detected. In addition, if a film is formed from a material comprising a mixture of particles of p-type semiconductor and particles of n-type semiconductor, the bias voltage can be an AC voltage.

Abstract: The present invention relates to a gas sensor and a gas discriminating method which are capable of distinctly discriminating two or more kinds of gases. A DC bias and AC signals which are superposed to a junction part, which is formed on a gas sensor having a p-type oxide semiconductor and an n-type oxide semiconductor by means of heterojunction of end surfaces thereof, an impedance characteristic of the junction part is measured, and CO gas and H.sub.2 gas are discriminated in accordance with a dependence on a frequency of the AC signals and on the DC bias of the impedance characteristic. CuO into which an alkali metal element is doped is used as the p-type oxide semiconductor and ZnO is used as the n-type oxide semiconductor. The alkali metal element to be used is an alkali metal element selected from the group of Li, Na and K and the doping quantity is such that 0.2 mole %.ltoreq.M.sub.2 O.ltoreq.5 mole %, where M is Li, Na or K.

Abstract: A humidity-sensitive actuator includes a plate made of piezoelectric electrostrictive ceramic having a variable electric resistance region having a high moisture absorbing capability and defining a flat electrode attachment surface, and a high, fixed electric resistance region having a low moisture absorbing capability and defining a flat electrode attachment surface. The variable electric resistance region is joined to the high, fixed electric resistance region with electrodes on the flat electrode attachment surface on opposite sides of the plate for applying an electric voltage transversely through the plate.

Abstract: A strain or stress gauge 1A is presented for measuring the stress of a structure or a member. The gauge 1A comprises a bundle of electric conductive fibers 3, and a pair of terminals 4, for measuring an electric resistance of the bundle of electric conductive fibers provided on both ends thereof. It presents a strain or stress gauge having a simple structure, which can be produced inexpensively, and its size can be chosen freely. It is possible to know not only the state of a strain or stress but also the history of stress in a structure or a structural member which, by the characteristics of a specific curve relating the stress/strain relationship of the gauge.

Abstract: Described in a joining agent for joining electrically ceramic bodies by heating the joining agent inserted at the parts to be jointed between the ceramic bodies with an electric current flowing predominantly through the joining agent at high temperature. The joining agent is superior in the wetability and reactivity with the ceramics to ensure the joint part strength. The joining agent includes, as an electric conductor, an electric conductive component made of an ion conductor consisting of fluoride, chloride, and/or oxide, which forms carrier ions by the pre-heating and has an electric conductivity higher than that of the ceramic body at the electric current supplying time. During the supplying electric current to time, the joining agent has the electric resistance increased gradually at the molten state of the joining agent by decreasing the density or the mobility of the carrier ions.

Abstract: In the present invention, semiconductor fibers electrical resistance of which varies in response to temperature change are arranged unidirectionally or bidirectionally, so that a detection element which has excellent response characteristic, can detect also a position of infrared source, and is inexpensive can be obtained.

Abstract: If a part of the surface of a solid electrolyte (1) is covered with a layer (2) of a metal salt capable of forming a dissociative equilibrium with a gas component to be measured and the remaining surface of the solid electrolyte (1) is substantially completely sealed and coated with a gas-intercepting layer (3), there can be provided a gas sensor having a simple structure, the size of which can be drastically reduced, and the operation characteristics of this gas sensor are very stable.

Abstract: Fibrous compounds having a ratio of length to diameter of at least 10 of the formula MO.TiO.sub.2 wherein M is a bivalent metal and processes for preparing these compounds are described. Preferably M is selected from the group consisting of barium, strontium, calcium, magnesium, cobalt, lead, zinc, beryllium, and cadmium. The processes for preparing the compounds utilize fibrous potassium titanate hydrates or fibrous titanium dioxide hydrates both having a ratio of length to diameter of at least 10 as the starting material to prepare the compounds.

Abstract: A process for preparing dielectric or semiconductive films which have densely packed structures. In a process comprising spreading a powdery ceramic material suspended in a binder and solvent on to a base plate to form a thin layer and subjecting the layer to firing, the improvement being provisionally firing the thin layer to remove the binder and solvent, cooling the resulting thin layer, covering the thin layer with an organic film, compressing the thin layer and the film to densely pack the thin layer and to adhere the thin layer to the film, prior to the firing.

Abstract: A novel noncrystalline fibrous potassium titanate and a process for preparing said titanate fiber by calcination of a mixture of potassium compound(s) and titanium compound(s) at a temperature of from 800.degree. C. to the melting point of the mixture to obtain whiskers formed on the surface thereof; and an improved process for preparing fibrous potassium hexatitanate which comprises calcining hydrated fibrous potassium titanate at a temperature of 500.degree. to 900.degree. C. or which comprises kneading a mixture of potassium compound(s) and titanium compound(s), and calcining the thus kneaded mixture at a temperature of 1150.degree. to 1300.degree. C. to obtain fibers from the inside of the bulk of the calcined mixture are described.

Abstract: A surface treating process for alkali glass to prevent "whitening" thereof. The method comprises bringing the surface of glass into contact with an aqueous solution containing one or more metal nitrates, the nitrate being of a metal selected from the group consisting of iron, nickel, chromium and cobalt.

Abstract: A method of making fibrous alkali titanate comprising the steps of melting a mixture of titanium compound and alkali compound at a temperature higher than 1000.degree.C, cooling the melted product so as to form a glassy material, pulverizing the resultant glassy material, treating the pulverized powder in an autoclave in the presence of water at a temperature at least higher than 350.degree.C so as to form fibrous alkali titanate, and washing the treated product.