Abstract: The present invention prevents a failure from occurring in an electric vehicle. This electric vehicle is driven by power obtained from a power line via a collector, an energy source mounted on the electric vehicle, or using both thereof, and causes power generated, for example, during braking to be regenerated to the power line via the collector or to be consumed in a load mounted on the electric vehicle. The electric vehicle is characterized by having a function of electrically separating the collector from the power line when the voltage of the power line or a circuit voltage within the electric vehicle deviates from a predetermined range.

Abstract: A polarizing element comprising an alignment layer and a polarizing layer formed by aligning a dichroic coloring agent by deposition which are successively disposed on a substrate, wherein the alignment layer is a sol-gel film formed by using a material comprising at least (A) a sol of an inorganic oxide and (B) an alkoxysilane and/or a hexaalkoxydisiloxane, and the ratio of amounts by mole of Component (B) to solid components in Component (A) [(B)/(A)(solid components)] is 99.9/0.1 to 40/60; and a process for producing the polarizing element. The polarizing element can be produced in simple steps, the treatment of abrasion of the surface necessary for alignment of a dichroic coloring agent by deposition is facilitated, and haze due to formation of cracks is absent.

Abstract: A method of making a press-moldable glass, including melting starting materials, forming a melt, and annealing a formed glass, wherein the melt has a composition such that, (1) when rapidly cooled to room temperature, it becomes glass that has a scattering coefficient of less than 0.005 cm-1 at wavelengths of from 400 to 2,500 nm or comprises crystals with a volumetric ratio of less than 10-6, and (2) when maintained for three hours at a temperature 10° C. higher than the glass transition temperature, maintained for 10 min at a temperature yielding a viscosity of 104.5 to 103.5 dPa·s, and then rapidly cooled to room temperature, (3) the resulting glass has (a) a scattering coefficient of at least one wavelength from 400 to 2,500 nm of greater than 0.01 cm-1 or (b) crystals with a volumetric ratio of greater than 10-5. A temperature for annealing is lower than for glass transition.

Abstract: A method of making a press-moldable glass, including melting starting materials, forming a melt, and annealing a formed glass, wherein the melt has a composition such that, (1) when rapidly cooled to room temperature, it becomes glass that has a scattering coefficient of less than 0.005 cm?1 at wavelengths of from 400 to 2,500 nm or comprises crystals with a volumetric ratio of less than 10?6, and (2) when maintained for three hours at a temperature 10° C. higher than the glass transition temperature, maintained for 10 min at a temperature yielding a viscosity of 104.5 to 103.5 dPa·s, and then rapidly cooled to room temperature, (3) the resulting glass has (a) a scattering coefficient of at least one wavelength from 400 to 2,500 nm of greater than 0.01 cm?1 or (b) crystals with a volumetric ratio of greater than 10?5. A temperature for annealing is lower than for glass transition.

Abstract: To provide a dichroic dye-containing liquid that is capable of preventing haze without decrease of adhesiveness of a polarizing layer, and a polarizer. The dichroic dye-containing liquid contains (A) a dichroic dye and (B) a toughness-imparting agent, in which the dichroic dye (A) and the toughness-imparting agent (B) are dispersed or dissolved in an aqueous medium, and a solid content X (% by mass) of the toughness-imparting agent (B) based on the dichroic dye-containing liquid and a 100% modulus Y (MPa) of the toughness-imparting agent (B) satisfy relationships represented by the following expressions (1) and (2): 0.01?X?1.0??(1) Y?0.14X?1.5??(2) and the polarizer contains a substrate having provided sequentially thereon an orientation layer and a polarizing layer, in which the polarizing layer containing a dichroic dye that is oriented and accumulated by using the dichroic dye-containing liquid.

Abstract: A polarizing element comprising an alignment layer and a polarizing layer formed by aligning a dichroic coloring agent by deposition which are successively disposed on a substrate, wherein the alignment layer is a sol-gel film formed by using a material comprising at least (A) a sol of an inorganic oxide and (B) an alkoxysilane and/or a hexaalkoxydisiloxane, and the ratio of amounts by mole of Component (B) to solid components in Component (A) [(B)/(A)(solid components)] is 99.9/0.1 to 40/60; and a process for producing the polarizing element. The polarizing element can be produced in simple steps, the treatment of abrasion of the surface necessary for alignment of a dichroic coloring agent by deposition is facilitated, and haze due to formation of cracks is absent.

Abstract: The invention of this application is a field-effect transistor type light-emitting device having an electron injection electrode, i.e. a source electrode, a hole injection electrode, i.e. a drain electrode, an emission active member disposed between the source electrode and the drain electrode so as to contact with both electrodes, and a field application electrode, i.e. a gate electrode, for inducing electrons and holes in the emission active member, which is disposed in the vicinity of the emission active member via an electrically insulating member or an insulation gap. The emission active member is made of an inorganic semiconductor material having both an electron transporting property and a hole transporting property.

Abstract: A light emitting device having practical light emission characteristics is obtained without epitaxial growth. A quantum dot-dispersed light emitting device of the invention includes a substrate 11, an electron injection electrode 12, a hole injection electrode 14, and an inorganic light emitting layer 13 disposed so as to be in contact with both the electrodes. The inorganic light emitting layer 13 contains an ambipolar inorganic semiconductor material and nanocrystals 15 dispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.

Abstract: A process for producing a polarizing element which comprises steps of treating a mixture comprising (A) an alkoxysilane and/or a hexaalkoxydisiloxane, (B) water and (C) an alcohol by heating under a condition of at 40 to 120° C. for 0.5 to 24 hours to prepare a coating solution for an alignment film, coating a substrate with the coating solution for an alignment film prepared above to prepare a sol-gel film, treating the sol-gel film by abrasion in a uniaxial direction to form an alignment layer having marks of abrasion in the uniaxial direction, aligning a dichroic coloring agent on the formed alignment layer by deposition to form a polarizing layer, and forming a protective layer for fixing the coloring agent on the formed polarizing layer. A polarizing element can be produced in simple steps, and separation of the polarizing layer in the steps of the production can be prevented.

Abstract: It is an object to provide a p-type ZnS based semiconductor material having a low resistance which can easily form an ohmic contact to a metallic material. Moreover, the invention provides a semiconductor device and a semiconductor light emitting device which include an electrode having a low resistance on a substrate other than a single crystal substrate, for example, a glass substrate. The semiconductor material according to the invention is used as a hole injecting electrode layer of a light emitting device and has a transparent property in a visible region which is expressed in a composition formula of Zn(1-?-?-?)Cu?Mg?Cd?S(1-x-y)SexTey (0.004???0.4, ??0.2, ??0.2, 0?x?1, 0?y?0.2, and x+y?1).

Abstract: A light emitting device having practical light emission characteristics is obtained without epitaxial growth. A quantum dot-dispersed light emitting device of the invention includes a substrate 11, an electron injection electrode 12, a hole injection electrode 14, and an inorganic light emitting layer 13 disposed so as to be in contact with both the electrodes. The inorganic light emitting layer 13 contains an ambipolar inorganic semiconductor material and nanocrystals 15 dispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.

Abstract: As a p-type ohmic contact electrode formation technique in a Group II-VI compound semiconductor, there is provided a material for forming an electrode that is low in resistance, stable, and not toxic, and is excellent in productivity, thereby providing an excellent semiconductor element. A semiconductor electrode material in the form of a material represented by a composition formula AxByCz where A: at least one element selected from Group 1B metal elements, B: at least one element selected from Group 8 metal elements, C: at least one element selected from S and Se), where X, Y, and Z are such that X+Y+Z=1, 0.20˜X˜0.35, 0.17˜Y˜0.30, and 0.45˜Z˜0.55.

Abstract: It is an object to provide a p-type ZnS based semiconductor material having a low resistance which can easily form an ohmic contact to a metallic material. Moreover, the invention provides a semiconductor device and a semiconductor light emitting device which include an electrode having a low resistance on a substrate other than a single crystal substrate, for example, a glass substrate. The semiconductor material according to the invention is used as a hole injecting electrode layer of a light emitting device and has a transparent property in a visible region which is expressed in a composition formula of Zn(1-?-?-?)Cu?Mg?Cd?S(1-x-y)SexTey (0.004???0.4, ??0.2, ??0.2, 0?x?1, 0?y?0.2, and x+y?1).

Abstract: A light-emitting diode with high luminous efficiency is provided which is free from deformation or defects of a crystal caused by a dopant. The light-emitting diode emits no light of unnecessary wavelengths and has a wide selection of emission wavelengths. The light-emitting diode comprises a light-emitting layer made of an ambipolar semiconductor containing no dopant, and an electron implanting electrode, that is, an n-electrode and a hole implanting electrode, that is, a p-electrode joined to the light-emitting layer.

Abstract: Disclosed is an optical glass comprising, expressed as weight percentages, greater than or equal to 18 percent and less than 30 percent of SiO2, greater than or equal to 12 percent and less than 23 percent of BaO, 22 to 37 percent TiO2, greater than or equal to 7 percent and less than 16 percent Nb2O5, 5 to 20 percent of Na2O, 0 to 6 percent of K2O, 0 to 5 percent of CaO, 0 to 5 percent of SrO, 0 to 4 percent of ZrO2, 0 to 3 percent of Ta2O5, 0 to 1 percent of Sb2O5, and greater than or equal to 0 percent and less than 0.5 percent of P2O5, and by essentially not comprising PbO, As2O3, and F. The optical glass exhibits a refractive index (nd) greater than or equal to 1.80 and an Abbé number (vd) less than or equal to 30. A method of manufacturing a glass material for press molding is disclosed.

Abstract: Disclosed is an optical glass comprising, expressed as weight percentages, greater than or equal to 18 percent and less than 30 percent of SiO2, greater than or equal to 12 percent and less than 23 percent of BaO, 22 to 37 percent TiO2, greater than or equal to 7 percent and less than 16 percent Nb2O5, 5 to 20 percent of Na2O, 0 to 6 percent of K2O, 0 to 5 percent of CaO, 0 to 5 percent of SrO, 0 to 4 percent of ZrO2, 0 to 3 percent of Ta2O5, 0 to 1 percent of Sb2O5, and greater than or equal to 0 percent and less than 0.5 percent of P2O5, and by essentially not comprising PbO, As2O3, and F. The optical glass exhibits a refractive index (nd) greater than or equal to 1.80 and an Abbé number (vd) less than or equal to 30. A method of manufacturing a glass material for press molding is disclosed.

Abstract: A theme is to provide a field-effect light-emitting device that can obtain a long-term reliability and broaden a selectivity of emission wavelength. The invention of this application is a field-effect transistor type light-emitting device having an electron injection electrode, i.e. a source electrode, a hole injection electrode, i.e. a drain electrode, an emission active member disposed between the source electrode and the drain electrode so as to contact with both electrodes, and a field application electrode, i.e. a gate electrode, for inducing electrons and holes in the emission active member, which is disposed in the vicinity of the emission active member via an electrically insulating member or an insulation gap. The emission active member is made of an inorganic semiconductor material having both an electron transporting property and a hole transporting property.

Abstract: Disclosed is an optical glass comprising, expressed as weight percentages, greater than or equal to 18 percent and less than 30 percent of SiO2, greater than or equal to 12 percent and less than 23 percent of BaO, 22 to 37 percent TiO2, greater than or equal to 7 percent and less than 16 percent Nb2O5, 5 to 20 percent of Na2O, 0 to 6 percent of K2O, 0 to 5 percent of CaO, 0 to 5 percent of SrO, 0 to 4 percent of ZrO2, 0 to 3 percent of Ta2O5, 0 to 1 percent of Sb2O5, and greater than or equal to 0 percent and less than 0.5 percent of P2O5, and by essentially not comprising PbO, As2O3, and F. The optical glass exhibits a refractive index (nd) greater than or equal to 1.80 and an Abbé number (vd) less than or equal to 30. A method of manufacturing a glass material for press molding is disclosed.

Abstract: A glass substrate is for use in a WDM optical filter which has an optical multilayer coated on the glass substrate and is formed by glass which has a composition related to the optical multilayer so as to assure stable multiplexing/demultiplexing operation in the optical filter. The glass includes SiO2 as a glass network-former and has an average linear thermal expansion coefficient between 100×10−7/K and 130×10−7/K within a temperature range between −30° C. and +70° C. The glass may include TiO2, Al2O3, and R2O (R: alkali metal element) in addition to SiO2 and may have a hardness suitable for the optical multilayer.

Abstract: Disclosed are an optical fiber comprising a core and a cladding wherein the core is composed of a In-Ga-Cd-Pb halide glass and the clad composed of a halide glass possesses a refractive index of 1.515 or less, which has a large specific refractive index difference (.DELTA.n) and a large numerical aperture, and such an optical fiber as mentioned above wherein the core contains one or more activating ions as well as an optical fiber amplifier comprising a pumping source, a laser glass fiber and a means for introducing pumping light and signal light into the above laser glass fiber, wherein the laser glass fiber is the optical fiber of the present invention mentioned above.