Abstract: The present invention provides a novel polymer that can impart a moisturized feeling to the hair and skin after use.

Abstract: The present invention provides a method for producing 2,6-di-tert-butyl-4-mercaptophenol containing reducing bis(3,5-di-tert-butyl-4-hydroxyphenyl)polysulfide with zinc in a mixed solvent of toluene and n-butanol, and provides a method for producing 4,4?-isopropylidenedithiobis[2,6-di-tert-butylphenol] using the above-mentioned method.

Abstract: The host computer of a product manufacturer (1) is provided with a back order database (12) containing order information and back order information, a procurement order database (13) containing procurement order information and a production control database (14) containing production schedule information and delivery date information to manage information integrally, and the host computer of the product manufacturer (1) and the terminals of part makers (3) are connected by leased communication lines for information exchange. The part makers (3) are able to retrieve directly information contained in those databases (12, 13, 14) through the leased communication lines, and are able to enter directly production schedule information and delivery date information into the production control database (14) by means of a received order managing means (15).

Abstract: A Static Random Access Memory (SRAM) device includes at least a transfer transistor, a driving transistor and a load resistor which are commonly connected to a node. A well has a first conductive type, and is placed on a substrate. A first impurity region has a second conductive type opposite to the first conductive type, and is placed in the well. A second impurity region has the first conductive type and has higher impurity concentration than the well, and is placed at a lower portion of the first impurity region. The node is composed of at least the first impurity region and the second impurity region.

Abstract: A semiconductor device, such as a BiCMOS, includes a bipolar transistor having at least an emitter region. An emitter electrode is formed on the emitter region. Further, a wiring pattern is formed over the emitter region. A plurality of contact plugs are formed to electrically connect the emitter electrode with the wiring pattern. The contact plugs are partially embedded in the emitter electrode in order to prevent of reduction of the current amplification factor of the bipolar transistor.