Patents by Inventor Hiroaki Yoshida

Hiroaki Yoshida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PROJECTION DESPLAY APPARATUS
    Publication number: 20110069242
    Abstract: A projection display apparatus (100) has an image light generating unit (200), a projection optical unit (300) and a screen (220). The projection optical unit (300) has a reflection mirror (320). The screen (220) is switchably configured to as to switch to whether to diffuse image light reflected by the reflection mirror (320) or to transmit the image light reflected by the reflection mirror (320).
    Type: Application
    Filed: September 28, 2010
    Publication date: March 24, 2011
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Ken MASHITANI, Takashi IKEDA, So SUZUKI, Hiroaki YOSHIDA, Kiyoko TSUJI, Michihiro OKUDA, Ippei OHASHI, Takehiko TAKIMOTO, Yasuhide KOGO
  • PROJECTION DISPLAY APPARATUS
    Publication number: 20110063580
    Abstract: A projection display apparatus (100) includes a image light generation unit (200) and a projection optical unit (300). The projection optical unit (300) has a reflecting mirror (320). The projection optical unit (300) is configured to project image light in a plurality of directions without changing the disposition of the projection display apparatus (100).
    Type: Application
    Filed: September 27, 2010
    Publication date: March 17, 2011
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Ryuhei AMANO, Takashi IKEDA, So SUZUKI, Hiroaki YOSHIDA, Yasuhide KOGO
  • PRESS MACHINE AND METHOD OF CONTROLLING THE SAME
    Publication number: 20110061547
    Abstract: Provided is a press machine for driving a slide by a motor, including a control device for controlling driving of the motor, in which the press machine has a press capacity which can be variably controlled by using field control for the motor.
    Type: Application
    Filed: September 16, 2010
    Publication date: March 17, 2011
    Applicant: AIDA ENGINEERING, LTD.
    Inventors: Hiroshi Nagase, Yasuhiko Tanaka, Kenji Suzuki, Hiroaki Yoshida
  • Group III nitride crystal and method of its growth
    Patent number: 7892513
    Abstract: Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×106 cm?2 or less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.
    Type: Grant
    Filed: January 26, 2009
    Date of Patent: February 22, 2011
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Shinsuke Fujiwara, Hiroaki Yoshida, Ryu Hirota, Koji Uematsu, Haruko Tanaka
  • Diamond film formation method and film formation jig thereof
    Patent number: 7846766
    Abstract: A diamond film formation method includes forming, in a composite of a metal material and a semiconductor material, diamond nuclei on a surface of the metal material at a temperature below 650° C. in a first mixed gas containing at least carbon and hydrogen, and growing the diamond nuclei formed in the composite at a temperature below 750° C. in a second mixed gas containing at least carbon and hydrogen to form a diamond film.
    Type: Grant
    Filed: February 13, 2007
    Date of Patent: December 7, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroaki Yoshida, Isamu Yanase, Tomio Ono, Naoshi Sakuma, Mariko Suzuki, Tadashi Sakai
  • Weldable steel of high strength and high toughness, and method of producing members using the same
    Publication number: 20100243110
    Abstract: Disclosed are a weldable steel of high strength and high toughness and a method of producing members of machine parts. The steel consists essentially of, by weight %, C: 0.10-0.16%, Si: 0.05-0.50%, Mn: 1.3-2.3%, Cu: up to 0.5%, Ni: up to 0.5%, Cr: up to 0.5%, Mo: up to 0.3% and Ti: 0.025-0.035%, and the balance of Fe and inevitable impurities, and satisfying the condition that the weld-cracking susceptibility, Pcm, defined by the formula 1A below is less than 0.35, and the condition that the manganese equivalent, Mneq, defined by the formula 2A below is larger than 2.0.
    Type: Application
    Filed: June 3, 2010
    Publication date: September 30, 2010
    Applicants: DAIDO STEEL CO., LTD., HONDA MOTOR CO., LTD.
    Inventors: Masanao Fujiwara, Hiroaki Yoshida, Masaki Shinkawa, Yoshikazu Umeno, Toshiaki Otsuka
  • Method for Growing Group III Nitride Crystal
    Publication number: 20100229786
    Abstract: A III-nitride crystal growth method that enables growing large-scale crystal under a liquid-phase technique is made available. The present III-nitride crystal growth method is a method of growing III-nitride crystal (10) by a liquid-phase technique, and is provided with: a step of preparing a III-nitride crystal substrate (1) having the same chemical composition as the III-nitride crystal (10), and having a thickness of not less than 0.5 mm; and a step of contacting onto a major surface (1m) of the III-nitride crystal substrate (1) a solution in which a nitrogen-containing gas (5) is dissolved in a solvent (3) that includes a Group-III metal, to grow III-nitride crystal (10) onto the major surface (1m).
    Type: Application
    Filed: September 19, 2008
    Publication date: September 16, 2010
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Koji Uematsu, Hiroaki Yoshida, Ryu Hirota, Shinsuke Fujiwara, Haruko Tanaka
  • Method for heat-treating steel material
    Patent number: 7767044
    Abstract: Disclosed is an efficient heat treatment method which can be performed in a short time. Specifically disclosed is a method for heat-treating a steel material wherein a plastically deformed steel work is introduced into a heat treatment furnace when the work still retains the heat applied thereto during the plastic deformation, then the work is heated preferably at a heating rate of 15-50 DEG C./min and held at a temperature between Ac1 and Ac3 for 10 minutes or less, and then the work is slowly cooled at a cooling rate of 5-45 DEG C./min. This heat treatment method enables to easily produce a steel material having a uniform metal structure by simple facilities.
    Type: Grant
    Filed: March 15, 2006
    Date of Patent: August 3, 2010
    Assignee: Honda Motor Co., Ltd.
    Inventors: Mitsuru Kamikawa, Hiroaki Yoshida, Shigekazu Ito
  • GROUP III NITRIDE CRYSTAL AND METHOD OF ITS GROWTH
    Publication number: 20100189624
    Abstract: Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×106 cm?2 or less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.
    Type: Application
    Filed: January 26, 2009
    Publication date: July 29, 2010
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Shinsuke Fujiwara, Hiroaki Yoshida, Ryu Hirota, Koji Uematsu, Haruko Tanaka
  • Method of Growing III-Nitride Crystal
    Publication number: 20100139553
    Abstract: Affords a method of growing, across the entirety of a major surface of a first III-nitride crystal, a second III-nitride crystal by HVPE, in an ambient temperature higher than 1100° C. The present III-nitride crystal growth method comprises: a step of preparing a first III-nitride crystal (10) having an alkali-metal atom concentration of less than 1.0×1018 cm?3; and a step of growing a second III-nitride crystal (20) onto a major surface (10m) of the first III-nitride crystal (10) by HVPE, in an ambient temperature higher than 1100° C.
    Type: Application
    Filed: December 3, 2009
    Publication date: June 10, 2010
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Hiroaki Yoshida, Shinsuke Fujiwara, Koji Uematsu, Masanori Morishita
  • Process of producing permanent magnet and permanent magnet
    Patent number: 7730755
    Abstract: The present invention relates to a process of producing a permanent magnet, which includes extruding a preform to form a plate-shaped permanent magnet, in which the preform is extruded in such a way that a dimension of a cross section of the preform is reduced in an X-direction and enlarged in a Y-direction perpendicular to the X-direction. The present invention also relates to a plate-shaped permanent magnet formed by extruding a preform, in which the preform is extruded in such a way that a dimension of a cross section of the preform is reduced in an X-direction and enlarged in a Y-direction perpendicular to the X-direction, whereby the permanent magnet has a strain ratio ?2/?1 with respect to the preform in a range of 0.2 to 3.5, in which ?1 is a strain in the direction of the extrusion of the preform and ?2 is a strain in the Y-direction.
    Type: Grant
    Filed: August 31, 2007
    Date of Patent: June 8, 2010
    Assignee: Daido Tokushuko Kabushiki Kaisha
    Inventors: Junichi Esaki, Hiroaki Yoshida, Sachihiro Isogawa
  • SEMICONDUCTOR LASER DRIVING DEVICE, OPTICAL HEAD DEVICE AND OPTICAL INFORMATION RECORDING/REPRODUCING DEVICE
    Publication number: 20100103805
    Abstract: A semiconductor laser driving device is provided with a high frequency superimposing circuit (3) for superimposing a frequency current onto a laser driving current (6) of a semiconductor laser (1) provided in an optical head device; and a high frequency superimposition control circuit (5) which controls the frequency of the high frequency current corresponding to the temperature of the semiconductor laser (1).
    Type: Application
    Filed: September 19, 2006
    Publication date: April 29, 2010
    Inventors: Hiroaki Yoshida, Hideki Hayashi, Tomotada Kamei
  • VEHICLE-MOUNTED MALFUNCTION NOTIFICATION APPARATUS AND VEHICLE-MOUNTED MALFUNCTION NOTIFICATION METHOD
    Publication number: 20100066521
    Abstract: A vehicle-mounted malfunction notification apparatus having a communication malfunction notification unit that notifies a vehicle operator of a communications malfunction when a malfunction occurring in a communications device persists for a specified period of time, includes a maintenance operation checking unit and a maintenance operation processing unit. The maintenance operation checking unit determines whether a maintenance operation for the communications device is being performed. The maintenance operation processing unit notifies the vehicle operator that the maintenance operation is being performed when the maintenance operation checking unit determines that the maintenance operation is being performed.
    Type: Application
    Filed: October 31, 2007
    Publication date: March 18, 2010
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventor: Hiroaki Yoshida
  • Semiconductor light-emitting device and producing method for the same
    Patent number: 7642542
    Abstract: A semiconductor light-emitting device includes: a first semiconductor layer; a light-emitting layer being disposed on the first semiconductor layer; a second semiconductor layer being disposed on the light-emitting layer, and metal electrodes connected to the first semiconductor layer and the second semiconductor layer. The light-emitting layer is lower in refractive index than the first semiconductor layer. The second semiconductor layer is lower in refractive index than the light-emitting layer. The metal electrodes supply a current to the light-emitting layer.
    Type: Grant
    Filed: September 13, 2006
    Date of Patent: January 5, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mariko Suzuki, Tomio Ono, Tadashi Sakai, Naoshi Sakuma, Hiroaki Yoshida
  • Discharge lamp and discharge electrode having an electron-emitting layer including a plurality of protrusions separated by grooves
    Patent number: 7605527
    Abstract: A discharge lamp encompassing a sealed-off tube filled with a discharge gas and a discharge electrode provided in the sealed-off tube. The discharge electrode embraces a supporting base and an electron-emitting layer formed of a wide bandgap semiconductor and provided on the supporting base, implemented by a plurality of protrusions, at least part of surfaces of the protrusions are unseen from a perpendicular direction to thereof above a top surface of the electron-emitting layer, dangling bonds of the wide bandgap semiconductor at the surfaces are terminated with hydrogen atoms.
    Type: Grant
    Filed: May 31, 2005
    Date of Patent: October 20, 2009
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tadashi Sakai, Tomio Ono, Naoshi Sakuma, Hiroaki Yoshida, Mariko Suzuki
  • Silicone rubber adhesive film
    Patent number: 7582697
    Abstract: A silicone rubber adhesive film comprising a composition formed from; (A) organopolysiloxane gum that has at least two alkenyl groups in each molecule; (B) wet-method hydrophobic reinforcing silica that has a specific surface area of at least 200 m2/g; (C) organohydrogenpolysiloxane that contains at least two silicon-bonded hydrogen atoms in each molecule; (D) mixture or reaction mixture from: (a) organopolysiloxane that has a branched molecular chain structure and that contains at least one silicon-bonded alkenyl group in each molecule and at least one silicon-bonded hydrolyzable group in each molecule, and (b) a silicon-containing compound that contains at least one silicon-bonded epoxy-functional hydrocarbon group and at least one silicon-bonded hydrolyzable group; and (E) curing accelerator.
    Type: Grant
    Filed: December 19, 2005
    Date of Patent: September 1, 2009
    Assignee: Dow Corning Toray Company, Ltd.
    Inventors: Kazuo Hirai, Hideo Miyazaki, Hiroaki Yoshida, Noriyuki Suganuma
  • Fuel cell
    Patent number: 7553570
    Abstract: Back pressure is applied to a liquid fuel stored in a fuel storage unit by a pressure application unit, and a liquid fuel vaporization membrane that vaporizes the liquid fuel to thereby supply the vaporized fuel gas to an anode is formed by a nonporous membrane. Backed by this, the liquid fuel can be prevented from leaking out to the anode, so that the concentration of the liquid fuel can be increased to an optimum level.
    Type: Grant
    Filed: December 28, 2004
    Date of Patent: June 30, 2009
    Assignee: Fujitsu Limited
    Inventors: Kensuke Yoshida, Hiroaki Yoshida, Masami Tsutsumi, Fumio Takei
  • Fuel cell
    Patent number: 7544436
    Abstract: A direct methanol type fuel cell is provided with a generated gas ejection part having a bundle made up of hollow fiber membranes extending between a fuel electrode and a liquid fuel vaporizing layer that vaporizes a methanol aqueous solution and supplies methanol gas to the fuel electrode. The hollow fiber membranes selectively pass carbon dioxide within a mixture gas that includes methanol, the carbon dioxide generated at the fuel electrode and the like, and eject the carbon dioxide via end portions of the hollow fiber membranes that open at a side surface of the fuel cell via hollow portions. The fuel cell has a high carbon dioxide ejection capability, and suppresses leak of methanol gas. A pressure applying part may be provided to apply a back pressure to the methanol aqueous solution within a fuel storage part, so as to further improve the carbon dioxide ejection capability.
    Type: Grant
    Filed: September 12, 2007
    Date of Patent: June 9, 2009
    Assignee: Fujitsu Limited
    Inventors: Makoto Yoshino, Seiji Hibino, Hiroaki Yoshida, Nawalage Florence Cooray, Fumio Takei
  • III Nitride Crystal Substrate, and Light-Emitting Device and Method of Its Manufacture
    Publication number: 20090140287
    Abstract: Toward making available III nitride crystal substrates advantageously employed in light-emitting devices, and light-emitting devices incorporating the substrates and methods of manufacturing the light-emitting devices, a III nitride crystal substrate has a major face whose surface area is not less than 10 cm2 and, in a major-face principal region excluding the peripheral margin of the major face from its outer periphery to a 5 mm separation from its outer periphery, the total dislocation density is from 1×104 cm?2 to 3×106 cm?2, and the ratio of screw-dislocation density to the total dislocation density is 0.5 or greater.
    Type: Application
    Filed: November 28, 2008
    Publication date: June 4, 2009
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Shinsuke Fujiwara, Hiroaki Yoshida
  • Heat sink, electronic device, method of manufacturing heat sink, and method of manufacturing electronic device
    Patent number: 7538423
    Abstract: A heat sink includes a base portion formed of insulating diamond, and a plurality of pressure contacting members formed of the insulating diamond and arranged on the base portion
    Type: Grant
    Filed: September 22, 2006
    Date of Patent: May 26, 2009
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tomio Ono, Tadashi Sakai, Naoshi Sakuma, Hiroaki Yoshida, Mariko Suzuki