Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: Disclosed is a method of manufacturing a GaN-based material having high thermal conductivity. A gallium nitride-based material is grown by HVPE (Hydride Vapor Phase Epitaxial Growth) by supplying a carrier gas (G1) containing H2 gas, GaCl gas (G2), and NH3 gas (G3) to a reaction chamber (10), and setting the growth temperature at 900 (° C.) (inclusive) to 1,200 (° C.) (inclusive), the growth pressure at 8.08×104 (Pa) (inclusive) to 1.21×105 (Pa) (inclusive), the partial pressure of the GaCl gas (G2) at 1.0×104 (Pa) (inclusive) to 1.0×104 (Pa) (inclusive), and the partial pressure of the NH3 gas (G3) at 9.1×102 (Pa) (inclusive) to 2.0×104 (Pa) (inclusive).

Abstract: A method to make gallium nitride-based material by Hydride Vapor Phase Epitaxial Growth is provided.

Abstract: A gallium nitride-based material prepared by a vertical Hydride Vapor Phase Epitaxial Growth method which has thermal conductivity of at least 2.8×102 W/m·K at 25° C. is provided.

Abstract: Disclosed is a method of manufacturing a GaN-based material having high thermal conductivity. A gallium nitride-based material is grown by HVPE (Hydride Vapor Phase Epitaxial Growth) by supplying a carrier gas (G1) containing H2 gas, GaCl gas (G2), and NH3 gas (G3) to a reaction chamber (10), and setting the growth temperature at 900 (° C.) (inclusive) to 1,200 (° C.) (inclusive), the growth pressure at 8.08×104 (Pa) (inclusive) to 1.21×105 (Pa) (inclusive), the partial pressure of the GaCl gas (G2) at 1.0×104 (Pa) (inclusive) to 1.0×104 (Pa) (inclusive), and the partial pressure of the NH3 gas (G3) at 9.1×102 (Pa) (inclusive) to 2.0×104 (Pa) (inclusive).

Abstract: A Ga-containing nitride semiconductor single crystal characterized in that (a) the maximum reflectance measured by irradiating the Ga-containing nitride semiconductor single crystal with light at a wavelength of 450 nm is 20% or less and the difference between the maximum reflectance and the minimum reflectance is within 10%, (b) the ratio of maximum value to minimum value (maximum value/minimum value) of the dislocation density measured by a cathode luminescence method is 10 or less, and/or (c) the lifetime measured by a time-resolved photoluminescence method is 95 ps or more.