Abstract: A method of manufacturing a semiconductor device including performing a first thermal processing a silicon substrate in a first atmosphere and at a first temperature to remove an oxide film above a surface of the silicon substrate, and after the first thermal processing, performing a second thermal processing the silicon substrate in a second atmosphere containing hydrogen and at a second temperature lower than the first temperature to terminate the surface of the silicon substrate with hydrogen.

Abstract: A method of manufacturing a semiconductor device including performing a first thermal processing a silicon substrate in a first atmosphere and at a first temperature to remove an oxide film above a surface of the silicon substrate, and after the first thermal processing, performing a second thermal processing the silicon substrate in a second atmosphere containing hydrogen and at a second temperature lower than the first temperature to terminate the surface of the silicon substrate with hydrogen.

Abstract: According to the present invention, a semiconductor device manufacturing method includes the steps of: forming a capacitor formation groove in a silicon (semiconductor) substrate; and forming a second insulating film by thermally oxidizing at least the upper surface of the silicon substrate and the bottom and the side surfaces of the capacitor formation groove, wherein either the step of implanting fluorine ions in the upper surface of the silicon substrate and the bottom of the capacitor formation groove is performed before the step of forming the second insulating film, or the step of forming the second insulating film is performed by thermally oxidizing the upper surface of the silicon substrate and the bottom and the side surfaces of the capacitor formation groove in the vapor atmosphere in the reduced pressure state.

Abstract: Single crystal silicon is grown in a [100] direction to make a bulk. Next, a silicon substrate with a normal of a surface extending in an inclined direction from a [100] direction is cut from the bulk. At this time, when an angle (off-angle) of inclination of the normal is decomposed into a component in a [001] direction and a component in a [010] direction, the component in the [001] direction is made within ±0.2 degrees (excluding 0 degree). An MOS transistor with a moving direction of carriers being the [001] direction is formed on the surface of the silicon substrate. At this time, after steps existing on the surface of the silicon substrate are reconstituted by thermal treatment in a hydrogen atmosphere, a gate insulation film, a gate electrode and the like are formed.

Abstract: Single crystal silicon is grown in a [100] direction to make a bulk. Next, a silicon substrate with a normal of a surface extending in an inclined direction from a [100] direction is cut from the bulk. At this time, when an angle (off-angle) of inclination of the normal is decomposed into a component in a [001] direction and a component in a [010] direction, the component in the [001] direction is made within ±0.2 degrees (excluding 0 degree). An MOS transistor with a moving direction of carriers being the [001] direction is formed on the surface of the silicon substrate. At this time, after steps existing on the surface of the silicon substrate are reconstituted by thermal treatment in a hydrogen atmosphere, a gate insulation film, a gate electrode and the like are formed.