Patents by Inventor Hirofumi Arai
Hirofumi Arai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240146807Abstract: A sensor device allocation apparatus that allocates a sensor device to an IoT service of the present invention includes a scoring unit that performs ranking of sensor devices satisfying a service requirement by an evaluation function based on specification conditions of the sensor devices and a scheduling unit that determines a control law of the sensor devices ranked by the scoring unit, in which the scheduling unit determines whether a service is satisfied based on collected data of the sensor device collected based on the control law, and the scoring unit corrects the evaluation function and repeats ranking of the sensor devices when the scheduling unit determines that the service is not satisfied.Type: ApplicationFiled: February 24, 2021Publication date: May 2, 2024Inventors: Takuma ISODA, Hirofumi NOGUCHI, Seisuke ARAI, Akinori SHIRAGA
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Publication number: 20230338750Abstract: A plurality of shift images are generated by shifting a fluoroscopic image by a prescribed increment within a prescribed range in a craniocaudal direction. Then, a normalized correlation coefficient between a DRR image and each of the plurality of shift images is calculated. Next, a shift amount of the shift image corresponding to the largest normalized correlation coefficient among the plurality of normalized correlation coefficients is determined to be the positional deviation.Type: ApplicationFiled: April 18, 2023Publication date: October 26, 2023Inventors: Hirofumi ARAI, Takeshi SASAKI
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Patent number: 9353441Abstract: A pedestal for supporting a substrate includes: a heating plate for heating the substrate; an upper cooling plate for cooling the substrate, installed on the heating plate and provided with an upper fluid path for passing a cooling fluid therethrough; and an lower cooling plate for cooling the substrate, installed under the heating plate and including a lower fluid path for passing a cooling fluid therethrough.Type: GrantFiled: October 5, 2012Date of Patent: May 31, 2016Assignee: ASM IP Holding B.V.Inventors: Hsiao Pei Chung, Hirofumi Arai, Dai Ishikawa
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Patent number: 9190263Abstract: A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.Type: GrantFiled: August 22, 2013Date of Patent: November 17, 2015Assignee: ASM IP Holding B.V.Inventors: Dai Ishikawa, Kiyohiro Matsushita, Akinori Nakano, Shintaro Ueda, Hirofumi Arai
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Patent number: 9136108Abstract: A method for restoring a porous surface of a dielectric layer formed on a substrate, includes: (i) providing in a reaction space a substrate on which a dielectric layer having a porous surface with terminal hydroxyl groups is formed as an outer layer; (ii) supplying gas of a Si—N compound containing a Si—N bond to the reaction space to chemisorb the Si—N compound onto the surface with the terminal hydroxyl groups; (iii) irradiating the Si—N compound-chemisorbed surface with a pulse of UV light in an oxidizing atmosphere to oxidize the surface and provide terminal hydroxyl groups to the surface; and (iv) repeating steps (ii) through (iii) to form a film on the porous surface of the dielectric layer for restoration.Type: GrantFiled: September 4, 2013Date of Patent: September 15, 2015Assignee: ASM IP Holding B.V.Inventors: Kiyohiro Matsushita, Hirofumi Arai
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Publication number: 20150064932Abstract: A method for restoring a porous surface of a dielectric layer formed on a substrate, includes: (i) providing in a reaction space a substrate on which a dielectric layer having a porous surface with terminal hydroxyl groups is formed as an outer layer; (ii) supplying gas of a Si—N compound containing a Si—N bond to the reaction space to chemisorb the Si—N compound onto the surface with the terminal hydroxyl groups; (iii) irradiating the Si—N compound-chemisorbed surface with a pulse of UV light in an oxidizing atmosphere to oxidize the surface and provide terminal hydroxyl groups to the surface; and (iv) repeating steps (ii) through (iii) to form a film on the porous surface of the dielectric layer for restoration.Type: ApplicationFiled: September 4, 2013Publication date: March 5, 2015Applicant: ASM IP Holding B.V.Inventors: Kiyohiro Matsushita, Hirofumi Arai
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Publication number: 20150056821Abstract: A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.Type: ApplicationFiled: August 22, 2013Publication date: February 26, 2015Applicant: ASM IP Holding B.V.Inventors: Dai Ishikawa, Kiyohiro Matsushita, Akinori Nakano, Shintaro Ueda, Hirofumi Arai
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Publication number: 20140096716Abstract: A pedestal for supporting a substrate includes: a heating plate for heating the substrate; an upper cooling plate for cooling the substrate, installed on the heating plate and provided with an upper fluid path for passing a cooling fluid therethrough; and an lower cooling plate for cooling the substrate, installed under the heating plate and including a lower fluid path for passing a cooling fluid therethrough.Type: ApplicationFiled: October 5, 2012Publication date: April 10, 2014Applicant: ASM IP Holding B.V.Inventors: Hsiao Pei Chung, Hirofumi Arai, Dai Ishikawa
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Patent number: 8466411Abstract: A method for managing UV irradiation for treating substrates in the course of treating multiple substrates consecutively with UV light, includes: exposing a first UV sensor to the UV light at first intervals to measure illumination intensity of the UV light so as to adjust the illumination intensity to a desired level based on the measured illumination intensity; and exposing a second UV sensor to the UV light at second intervals to measure illumination intensity of the UV light so as to calibrate the first UV sensor by equalizing the illumination intensity measured by the first UV sensor substantially with the illumination intensity measured by the second UV sensor, wherein each second interval is longer than each first interval.Type: GrantFiled: March 3, 2011Date of Patent: June 18, 2013Assignee: ASM Japan K.K.Inventor: Hirofumi Arai
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Publication number: 20120223220Abstract: A method for managing UV irradiation for treating substrates in the course of treating multiple substrates consecutively with UV light, includes: exposing a first UV sensor to the UV light at first intervals to measure illumination intensity of the UV light so as to adjust the illumination intensity to a desired level based on the measured illumination intensity; and exposing a second UV sensor to the UV light at second intervals to measure illumination intensity of the UV light so as to calibrate the first UV sensor by equalizing the illumination intensity measured by the first UV sensor substantially with the illumination intensity measured by the second UV sensor, wherein each second interval is longer than each first interval.Type: ApplicationFiled: March 3, 2011Publication date: September 6, 2012Applicant: ASM JAPAN K.K.Inventor: Hirofumi Arai
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Publication number: 20080299747Abstract: A method includes introducing a silicon-containing source gas and a dilution gas to a reactor to deposit an amorphous silicon film on a substrate by plasma CVD; and adjusting a compressive film stress to 300 MPa or less and a uniformity of film thickness within the substrate surface to ±5% or less of the amorphous silicon film depositing on the substrate as a function of a flow rate of the source gas, a flow rate of the dilution gas, and a pressure of the reactor which are used as control parameters.Type: ApplicationFiled: May 30, 2007Publication date: December 4, 2008Applicant: ASM JAPAN K.K.Inventors: Hirofumi ARAI, Takashige WATANABE
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Patent number: 7234476Abstract: A method of remote plasma cleaning a processing chamber of CVD equipment, which has high cleaning rates, low cleaning operational cost and high efficiency, is provided. The method comprises supplying cleaning gas to the remote plasma-discharge device; activating the cleaning gas inside the remote plasma-discharge device; and bringing the activated cleaning gas into the processing chamber and which is characterized in that a mixed gas of F2 gas and an inert gas are used as the cleaning gas. A concentration of the F2 gas is 10% or higher. The F2 gas, which is a cleaning gas, is supplied to the remote plasma-discharge device from an F2 gas cylinder by diluting F2 gas at a given concentration by an inert gas.Type: GrantFiled: March 10, 2003Date of Patent: June 26, 2007Assignee: ASM Japan K.K.Inventors: Hirofumi Arai, Hideaki Fukuda
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Publication number: 20030170402Abstract: A method of remote plasma cleaning a processing chamber of CVD equipment, which has high cleaning rates, low cleaning operational cost and high efficiency, is provided. The method comprises supplying cleaning gas to the remote plasma-discharge device; activating the cleaning gas inside the remote plasma-discharge device; and bringing the activated cleaning gas into the processing chamber and which is characterized in that a mixed gas of F2 gas and an inert gas are used as the cleaning gas. A concentration of the F2 gas is 10% or higher. The F2 gas, which is a cleaning gas, is supplied to the remote plasma-discharge device from an F2 gas cylinder by diluting F2 gas at a given concentration by an inert gas.Type: ApplicationFiled: March 10, 2003Publication date: September 11, 2003Inventors: Hirofumi Arai, Hideaki Fukuda
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Patent number: 6136104Abstract: A copper alloy which is adapted for use as terminals and connectors, which comprises from 0.1 wt % to less than 0.5 wt % of Ni, from larger than 1.0 wt % to less than 2.5 wt % of Sn, from larger than 1.0 wt % to 15 wt % of Zn, and further comprises from at least one element selected between from 0.0001 wt % to less than 0.05 wt % of P and from 0.0001 wt % to 0.005 wt % of Si, and the balance being Cu and inevitable impurities The alloy has an electrical conductivity of 90% or below relative to a maximum electrical conductivity of an annealed copper alloy and an area ratio of insoluble matters such as precipitates is 5% or below.Type: GrantFiled: July 7, 1999Date of Patent: October 24, 2000Assignee: Kobe Steel, Ltd.Inventors: Motohisa Miyafuji, Hirofumi Arai, Koya Nomura