Abstract: A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program.

Abstract: A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program.

Abstract: The present invention provides a wafer heating device which can improve uniformity of a temperature distribution within a surface area of a wafer, with a relatively simple structure. A wafer is supported on a susceptor of annular shape. A first heater of disc shape is disposed below the wafer, and a second heater of annular shape is disposed to surround the first heater. Radiation thermometers are arranged at a ceiling portion of a reaction chamber. The first radiation thermometer measures a temperature of a central area of the wafer, the second radiation thermometer measures a temperature of a peripheral area of the wafer, and the third radiation thermometer measures a temperature of the susceptor. The first heater and the second heater are controlled by independent closed loops. When a wafer is set on the susceptor, a power of the second heater is controlled by using a value measured by the second radiation thermometer as a feedback signal.

Abstract: An apparatus for controlling a heating temperature which does not need to memorize compensation data preliminary but promptly corresponds to the temperature fluctuation in accordance with the running condition to thereby control the temperature accurately and stably. The control device 10 controls a heating state of the heater 4 corresponding to setting and a running state of the injection mold machine 1 heated by the heater 4. The injection mold machine 1 is adapted to run as expected and the temperature of which is maintained at a predetermined value by the heater 4. The mean value calculation and memory portion 20 functions to calculate a mean value of control inputs throughout a certain operating state. When the setting of the control device 10 is altered, the injection mold machine 1 requires another heating condition due to a change of operating state thereof.

Abstract: An apparatus for controlling a heating temperature, especially for heating a resin in a injection mold machine, a extruder and the like, includes a control device for controlling a heating means and the state of a heated barrel and a condition compensating device for issuing a compensation input to the heaters respectively in response to a reset of the control device, depending on the kinds of resin materials and molding conditions so as to prevent insufficient moldability in the injection mold machine and a deterioration of resin.

Abstract: There are disclosed a method of and an apparatus for controlling a track position error of a load such as the workpiece table of a multi-axis machine tool. A feed pulse signal for driving the load is added to a deviation of a present position signal detected of the load from a commanded position signal dependent on the polarity of the deviation. The deviation of the added feed pulse signal from the present position signal of the load is determined, and a drive signal for driving the load is derived from a deviation signal indicative of the last-mentioned deviation. A drive source for driving the load is controlled with the deviation signal.