Abstract: According to one embodiment, a manufacturing device of a display device includes a conveyance mechanism for conveying a processing substrate in a first direction, and first, second, third and fourth evaporation portions arranged in order in the first direction. The first evaporation portion includes a plurality of evaporation chambers for forming an organic layer. The second evaporation portion includes an evaporation chamber for forming an upper electrode. The third evaporation portion includes an evaporation chamber for forming a first transparent layer. The fourth evaporation portion includes an evaporation chamber for forming a second transparent layer having a refractive index less than a refractive index of the first transparent layer on the first transparent layer.

Abstract: According to one embodiment, a manufacturing method of a display device includes preparing a processing substrate by forming a lower electrode, a rib and a partition, forming an organic layer on the lower electrode, forming an upper electrode on the organic layer, forming a first transparent layer on the upper electrode by depositing a first organic material, forming a second transparent layer on the first transparent layer by depositing a second organic material, and depositing the second organic material on each of a plurality of crystal oscillators included in a film thickness measurement device by emitting the second organic material from first and second nozzles of an evaporation source before forming the second transparent layer.

Abstract: According to one embodiment, a manufacturing method of a display device includes preparing a processing substrate, forming an organic layer, and forming an etching stopper layer on the organic layer. The forming the etching stopper layer includes carrying the processing substrate into a chamber, inside the chamber, emitting a material for forming the etching stopper layer from an evaporation source which inclines with respect to a normal of the processing substrate, and conveying the processing substrate while rotating the processing substrate in a plane orthogonal to the normal, and depositing the material emitted from the evaporation source on the processing substrate.

Abstract: According to one embodiment, a manufacturing method of a display device includes forming processing substrate, forming an organic layer, forming an upper electrode, forming a transparent layer, and forming an inorganic layer. The forming the upper electrode includes inclining a first evaporation source with respect to a normal of the processing substrate and depositing a material emitted from the first evaporation source while conveying the processing substrate. The forming the inorganic layer includes inclining a second evaporation source to a side opposite to a side to which the first evaporation source is inclined and depositing a material emitted from the second evaporation source while conveying the processing substrate.

Abstract: According to one embodiment, a processing substrate is prepared. An organic layer is formed. An etching stopper layer is formed. The forming the etching stopper layer includes, in a first mode, inclining an evaporation source, and depositing a material emitted from the evaporation source while relative positions of the evaporation source and the processing substrate are changed, and in a second mode, inclining the evaporation source in a manner different from the first mode, and depositing the material emitted from the evaporation source while the relative positions of the evaporation source and the processing substrate are changed in an opposite manner of the first mode.

Abstract: According to one embodiment, in a manufacturing method of a display device, a first etching stopper layer and a first sealing layer is formed. A second etching stopper layer and a second sealing layer is formed. A third etching stopper layer and a third sealing layer is formed. An etching rate of the first etching stopper layer is less than an etching rate of the first sealing layer. An etching rate of the second etching stopper layer is less than an etching rate of the second sealing layer. An etching rate of the third etching stopper layer is less than an etching rate of the third sealing layer. A thickness of each of the first etching stopper layer and the second etching stopper layer is greater than a thickness of the third etching stopper layer.

Abstract: According to one embodiment, a method of manufacturing a display device, includes forming a first thin film including a first light-emitting layer over a first subpixel, a second subpixel, and a third subpixel, removing the first thin film of the second subpixel, forming a second thin film including a second light-emitting layer over the first subpixel, the second subpixel, and the third subpixel, removing the second thin film of the first subpixel and the third subpixel, removing the first thin film of the third subpixel, forming a third thin film including a third light-emitting layer over the first subpixel, the second subpixel, and the third subpixel, and removing the third thin film of the first subpixel and the second subpixel.

Abstract: According to one embodiment, a display device includes a semiconductor layer, a first insulating film covering the semiconductor layer, a gate line extended in a first direction on the first insulating film to intersect the semiconductor layer, a second insulating film covering the gate line, a first common electrode formed on the second insulating film, a third insulating film covering the first common electrode, a source line which is extended in a second direction on the third insulating film and which is in contact with the semiconductor layer, and a fourth insulating film which covers the source line and which has a thickness greater than a thickness of the third insulating film.

Abstract: According to one embodiment, provided is a polycrystallization method for polycrystallizing an amorphous semiconductor film that has a natural oxide film on the surface. The polycrystallization method includes a step of cleaning the natural oxide film while leaving the natural oxide film on the surface of the amorphous semiconductor film, and a step of polycrystallizing the amorphous semiconductor film in the state where the natural oxide film is left.

Abstract: According to one embodiment, a display device includes a semiconductor layer, a first insulating film covering the semiconductor layer, a gate line extended in a first direction on the first insulating film to intersect the semiconductor layer, a second insulating film covering the gate line, a first common electrode formed on the second insulating film, a third insulating film covering the first common electrode, a source line which is extended in a second direction on the third insulating film and which is in contact with the semiconductor layer, and a fourth insulating film which covers the source line and which has a thickness greater than a thickness of the third insulating film.

Abstract: According to one embodiment, provided is a polycrystallization method for polycrystallizing an amorphous semiconductor film that has a natural oxide film on the surface . The polycrystallization method includes a step of cleaning the natural oxide film while leaving the natural oxide film on the surface of the amorphous semiconductor film, and a step of polycrystallizing the amorphous semiconductor film in the state where the natural oxide film is left.

Abstract: The present invention relates to a process for producing a tertiary amine, including the following steps (1) and (2): Step (1); introducing an alcohol having 1 to 36 carbon atoms and a raw amine represented by the following general formula (I) into a first reaction vessel to react with each other in the presence of a catalyst and hydrogen, and then continuing the reaction while discharging water produced in the reaction and a hydrogen-containing gas out of a reaction system in the first reaction vessel: R1R2NH??(I) wherein R1 and R2 are each independently a hydrogen atom or a hydrocarbon group having 1 to 36 carbon atoms; and Step (2): introducing the hydrogen-containing gas discharged from the first reaction vessel into a second reaction vessel to reduce an amount of carbon monoxide contained in the hydrogen-containing gas, and then introducing a part or whole of the hydrogen-containing gas into the first reaction vessel.

Abstract: The present invention relates to a process for producing a tertiary amine, including the following steps (1) and (2): Step (1); introducing an alcohol having 1 to 36 carbon atoms and a raw amine represented by the following general formula (I) into a first reaction vessel to react with each other in the presence of a catalyst and hydrogen, and then continuing the reaction while discharging water produced in the reaction and a hydrogen-containing gas out of a reaction system in the first reaction vessel: R1R2NH??(I) wherein R1 and R2 are each independently a hydrogen atom or a hydrocarbon group having 1 to 36 carbon atoms; and Step (2): introducing the hydrogen-containing gas discharged from the first reaction vessel into a second reaction vessel to reduce an amount of carbon monoxide contained in the hydrogen-containing gas, and then introducing a part or whole of the hydrogen-containing gas into the first reaction vessel.

Abstract: The invention relates to a detergent for hard surfaces, which contains (a) a polymer compound having a cationic group, such as a cation-modified polyvinyl alcohol containing specified structural units, (b) a surfactant and (c) water.

Abstract: The invention relates to a detergent for hard surfaces, which contains (a) a polymer compound having a cationic group, such as a cation-modified polyvinyl alcohol containing specified structural units, (b) a surfactant and (c) water.