Abstract: According to one embodiment, a magnetic memory device includes an element unit and a controller. The element unit includes a magnetic member, a first magnetic layer, a second magnetic layer, an intermediate layer, and a non-magnetic layer. The magnetic member includes a first region, a first portion, and a second portion. The first region is provided between the first portion and the second portion, or included in the first portion. The first magnetic layer is apart from the first region in a first direction. The second magnetic layer is provided between the first region and the first magnetic layer. The intermediate layer is provided between the first magnetic layer and the second magnetic layer. The intermediate layer is non-magnetic. The non-magnetic layer is connected with the first region. The controller is configured to supply a writing current and a shift current to the element unit.

Abstract: According to the embodiment, a magnetic memory device includes a magnetic body. The magnetic body includes first and second extending regions, and a first connecting region. The first extending region spreads along a first direction and along a second direction crossing the first direction, and includes first and second end portions extending in the first direction. The second end portion is separated from the first end portion in the second direction. The second extending region spreads along the first direction and along a third direction crossing the first direction, and includes third and fourth end portions extending in the first direction. The fourth end portion is separated from the third end portion in the third direction. The first connecting region is provided between the first and third end portions, and connects the first end portion with the third end portion.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic body and a second magnetic body. The first magnetic body extends in a first direction. The second magnetic body extends in the first direction. A distance between the second magnetic body and the first magnetic body changes periodically along the first direction.

Abstract: According to one embodiment, a magnetic memory element comprises a first magnetic unit, a second magnetic unit, a first insulating unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit includes a plurality of magnetic domains. The second magnetic unit includes a first region and a second region. The first region includes a conductive material. The second region includes an insulating material. At least one of the first region or the second region is magnetic. The first insulating unit is provided between the first magnetic unit and the second magnetic unit. The first electrode and the second electrode are connected to the first magnetic unit. A part of the second magnetic unit and a part of the first insulating unit are provided between the third electrode and a part of the first magnetic unit.

Abstract: According to one embodiment, a magnetic memory element includes a first magnetic unit, a second magnetic unit, a nonmagnetic unit, and a controller. The second magnetic unit includes a first portion and a second portion. The first portion includes a first region and a second region. The controller performs a first operation and a second operation. In the first operation, the controller changes a direction of a magnetization of the first region by causing a first current to flow through the first portion in a first current direction. The first current has a first current value. In the second operation, the controller changes a direction of a magnetization of the second region by causing a second current to flow through the first portion in a second current direction. The second current has a second current value. The second current value is less than the first current value.

Abstract: According to one embodiment, a magnetic memory element comprises a first magnetic unit, a second magnetic unit, a first insulating unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit includes a plurality of magnetic domains. The second magnetic unit includes a first region and a second region. The first region includes a conductive material. The second region includes an insulating material. At least one of the first region or the second region is magnetic. The first insulating unit is provided between the first magnetic unit and the second magnetic unit. The first electrode and the second electrode are connected to the first magnetic unit. A part of the second magnetic unit and a part of the first insulating unit are provided between the third electrode and a part of the first magnetic unit.

Abstract: One embodiment provides a magnetic logic device including: a first conductive thin wire; a second conductive thin wire; and a third conductive thin wire that electrically connects the first conductive thin wire and the second conductive thin wire. The first to third conductive thin wires commonly includes: a first non-magnetic metal layer; a second non-magnetic metal layer; and a magnetic metal layer sandwiched between the first non-magnetic metal layer and the second non-magnetic metal layer.

Abstract: According to one embodiment, a magnetic memory element includes a first magnetic unit, a second magnetic unit, a nonmagnetic unit, and a controller. The second magnetic unit includes a first portion and a second portion. The first portion includes a first region and a second region. The controller performs a first operation and a second operation. In the first operation, the controller changes a direction of a magnetization of the first region by causing a first current to flow through the first portion in a first current direction. The first current has a first current value. In the second operation, the controller changes a direction of a magnetization of the second region by causing a second current to flow through the first portion in a second current direction. The second current has a second current value. The second current value is less than the first current value.

Abstract: A magnetic memory element includes a first magnetic unit, a second magnetic unit, a third magnetic unit, a read/write unit, a first electrode, a second electrode, a third electrode, a first current source, the second current source. The third magnetic unit is connected to one end in the first direction of the first magnetic unit and one end in the first direction of the second magnetic unit. The read/write unit includes a nonmagnetic layer and a pinned layer. The nonmagnetic layer is connected to the third magnetic unit. The pinned layer is connected to the nonmagnetic layer. The first current source causes a current to flow between the third electrode and at least one of the first electrode or the second electrode. The second current source causes a current to flow between the first electrode and the second electrode.

Abstract: According to one embodiment, a magnetic memory device includes a first memory unit including a first memory array and a first drive unit, a second memory unit including a second memory array and a second drive unit, and a controller. The first memory array includes a first magnetic shift register unit. The second memory array includes a second magnetic shift register unit. The controller subdivides input data into a plurality of one-dimensional bit input arrays. The one-dimensional bit input arrays include a first array and a second array. The controller stores the first array in the first magnetic shift register unit on a last in, first out basis, and stores the second array in the second magnetic shift register unit on a last in, first out basis.

Abstract: According to one embodiment, a magnetic memory element comprises a first magnetic unit, a second magnetic unit, a first insulating unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit includes a plurality of magnetic domains. The second magnetic unit includes a first region and a second region. The first region includes a conductive material. The second region includes an insulating material. At least one of the first region or the second region is magnetic. The first insulating unit is provided between the first magnetic unit and the second magnetic unit. The first electrode and the second electrode are connected to the first magnetic unit. A part of the second magnetic unit and a part of the first insulating unit are provided between the third electrode and a part of the first magnetic unit.

Abstract: One embodiment provides a magnetic logic device including: a first conductive thin wire; a second conductive thin wire; and a third conductive thin wire that electrically connects the first conductive thin wire and the second conductive thin wire. The first to third conductive thin wires commonly includes: a first non-magnetic metal layer; a second non-magnetic metal layer; and a magnetic metal layer sandwiched between the first non-magnetic metal layer and the second non-magnetic metal layer.

Abstract: According to one embodiment, a magnetic memory includes a first magnetic unit, a first magnetic layer, a first recording/reproducing element, a first electrode, and a second electrode. The first magnetic unit extends in a first direction. The first magnetic unit includes a plurality of magnetic domains arranged in the first direction. The first magnetic unit has a columnar configuration having a hollow portion. The first magnetic layer is connected to a first end portion of the first magnetic unit, the first magnetic layer extends in a direction intersecting the first direction. The first recording/reproducing element is provided in contact with the first magnetic layer. The first electrode is electrically connected to the first magnetic layer. The second electrode is connected to a second end portion of the first magnetic unit on a side opposite to the first end portion.

Abstract: According to one embodiment, a magnetic memory element includes a first magnetic unit, a second magnetic unit, a third magnetic unit, a read/write unit, a first electrode, a second electrode, a third electrode, a first current source, the second current source. The third magnetic unit is connected to one end in the first direction of the first magnetic unit and one end in the first direction of the second magnetic unit. The read/write unit includes a nonmagnetic layer and a pinned layer. The nonmagnetic layer is connected to the third magnetic unit. The pinned layer is connected to the nonmagnetic layer. The first current source causes a current to flow between the third electrode and at least one of the first electrode or the second electrode. The second current source causes a current to flow between the first electrode and the second electrode.

Abstract: An example magnetic recording device includes a magnetic recording section and a magnetization oscillator and a first nonmagnetic layer disposed between the magnetic recording section and the magnetization oscillator. The magnetic recording section includes a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; and a second nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. The magnetization oscillator includes a third ferromagnetic layer with a variable magnetization direction; a fourth ferromagnetic layer with a magnetization substantially fixed in a second direction; and a third nonmagnetic layer disposed between the third ferromagnetic layer and the fourth ferromagnetic layer.

Abstract: According to one embodiment, a magnetic memory includes a first magnetic unit, a first magnetic layer, a first recording/reproducing element, a first electrode, and a second electrode. The first magnetic unit extends in a first direction. The first magnetic unit includes a plurality of magnetic domains arranged in the first direction. The first magnetic unit has a columnar configuration having a hollow portion. The first magnetic layer is connected to a first end portion of the first magnetic unit, the first magnetic layer extends in a direction intersecting the first direction. The first recording/reproducing element is provided in contact with the first magnetic layer. The first electrode is electrically connected to the first magnetic layer. The second electrode is connected to a second end portion of the first magnetic unit on a side opposite to the first end portion.

Abstract: A magnetic memory according to an embodiment includes: a magnetic layer including a plurality of magnetic domains and a plurality of domain walls, and extending in a direction; a pinning layer formed with nonmagnetic phases and magnetic phases, extending in an extending direction of the magnetic layer and being located adjacent to the magnetic layer; an electrode layer located on the opposite side of the pinning layer from the magnetic layer; an insulating layer located between the pinning layer and the electrode layer; a current introducing unit flowing a shift current to the magnetic layer, the shift current causing the domain walls to shift; a write unit writing information into the magnetic layer; a read unit reading information from the magnetic layer; and a voltage generating unit generating a voltage to be applied between the pinning layer and the electrode layer.

Abstract: A magnetic memory includes a first magnetic line, an electrode, a write-in portion, a second magnetic line, and a spin-wave generator. The first magnetic line has a plurality of magnetic domains and domain walls, the domain wall separating the magnetic domain. The electrode is provided to both ends of the first magnetic line. The write-in portion is provided adjacent to the first magnetic line. The second magnetic line is provided so that the second magnetic line intersects with the first magnetic line. The spin-wave generator provided to one end of the second magnetic line. The spin-wave detector provided to the other end of the second magnetic line.

Abstract: A shift register according to an embodiment includes: a magnetic nanowire; a first control electrode group and a second control electrode group arranged with the magnetic nanowire being sandwiched therebetween, the first control electrode group including a plurality of first control electrodes arranged to be spaced apart from each other along a direction in which the magnetic nanowire extends, the second control electrode group including a plurality of second control electrodes arranged to be spaced apart from each other to correspond to the plurality of first control electrodes along the direction in which the magnetic nanowire extends, and the second control electrodes corresponding to the first control electrodes being shifted in the direction in which the magnetic nanowire extends; a first driving unit for driving the first control electrode group; and a second driving unit for driving the second control electrode group.

Abstract: A magnetic storage element according to an embodiment includes: a magnetic nanowire having a cross-sectional area varying in a first direction, the magnetic nanowire having at least two positions where the cross-sectional area is minimal; first and second electrode groups having the magnetic nanowire interposed in between, the magnetic nanowire including at least one of a first region where the first electrodes overlap the second electrodes with the magnetic nanowire interposed in between and a second region where neither the first electrodes nor the second electrodes exist with the magnetic nanowire interposed in between, the magnetic nanowire including at least one of a third region where the first electrodes exist and the second electrodes do not exist with the magnetic nanowire interposed in between and a fourth region where the first electrodes do not exist and the second electrodes exist with the magnetic nanowire interposed in between.