Abstract: A solid-state imaging device includes: a light receiving portion formed on a semiconductor substrate; a multilayer structure formed on the semiconductor substrate, that includes an interlayer insulating film and a first concave portion at a position corresponding to the light receiving portion; and an optical waveguide formed in the first concave portion. The optical waveguide includes a first film and a second film formed sequentially from a side of the multilayer structure. The first film covers a side face and a bottom face of the first concave portion and includes a second concave portion. The second film is in contact with the first film and fills up the second concave portion. The thickness of the first film formed on the side face of the first concave portion is thinner at a top portion of the first concave portion than at the bottom portion thereof.