Abstract: An integrated sheet structure for a secondary battery, including a first mixture layer containing a first active material and a first binder, a second mixture layer containing a second active material and a second binder, and a third mixture layer located between the first mixture layer and the second mixture layer and containing solid particles and a third binder, in which the first mixture layer and the third mixture layer are bonded each other, and the second mixture layer and the third mixture layer are bonded each other.

Abstract: Provided is a secondary battery including a negative electrode, a positive electrode, a separation layer in contact with an active material-containing layer of the negative electrode, and an aqueous electrolyte. A first concentration corresponding to a first metal concentration represented by Equation 1 (first metal concentration=atomic concentration of Hg, Pb, Zn, and/or Bi/sum of atomic concentrations of elements B to U in periodic table, excluding carbon and oxygen) in a boundary region between the active material-containing layer and the separation layer is 2% or more and 8.2% or less. A ratio of the first concentration to a second concentration corresponding to the first metal concentration represented by Equation 1 in the active material-containing layer excluding the boundary region is 2.5 or more and less than 4.

Abstract: A radioisotope production apparatus includes: a linear accelerator for accelerating an ion beam and irradiating a target with the ion beam, radio frequency power supplies for supplying radio frequency waves through coaxial tubes and the linear accelerator, a target shield member containing the target, a first radiation shield member covering the linear accelerator, and a movable second radiation shield member covering the side of target shield member of the linear accelerator between the first radiation shield member and the target shield member. The first radiation shield member is movably divided in opposite directions, respectively, of the axial direction of the linear accelerator from the base point of the connection point of the coaxial tube connected to the linear accelerator.

Abstract: A radioisotope production apparatus includes: a linear accelerator for accelerating an ion beam and irradiating a target with the ion beam, radio frequency power supplies for supplying radio frequency waves through coaxial tubes and the linear accelerator, a target shield member containing the target, a first radiation shield member covering the linear accelerator, and a movable second radiation shield member covering the side of target shield member of the linear accelerator between the first radiation shield member and the target shield member. The first radiation shield member is movably divided in opposite directions, respectively, of the axial direction of the linear accelerator from the base point of the connection point of the coaxial tube connected to the linear accelerator.

Abstract: The object of the present invention is to provide a wafer processing method for forming ultra thin SOI and thick BOX films by implanting oxygen ion beams with different energy levels in the same silicon wafer at a low accelerating voltage. To solve this subject, the oxygen ion beams with different energy levels are irradiated in the same wafer. According to the configuration mentioned above, the SIMOX wafer including the SOI and BOX films, either of which has the same thickness, can be manufactured at a lower accelerating voltage, half of the conventional one, providing economical implantation apparatus.

Abstract: A plasma processing apparatus comprises a plasma generating chamber including a side wall and a roof-plate to cover the upper part of the side wall, in which plasma is generated; a plurality of magnets, one group of the magnets being arranged on the roof-plate in concentric circles, with the polarity of each magnets in each circle being alternated, and the other group of the magnets being arranged around the side wall of the plasma generating chamber in rings, with the polarity of each magnet in each ring being alternated, to form a cusped magnetic field to confine the plasma in the plasma generating chamber; and a holding device which is provided in the plasma generating chamber, to hold a substrate to be processed with the plasma; wherein the magnet means arranged on the roof-plate and the magnet means arranged around the side wall are held in such a way that then can be moved up and down.

Abstract: A plasma processing apparatus comprises a plasma generating chamber including a side wall and a roof-plate to cover the upper part of the side wall, in which plasma is generated; a plurality of magnets, one group of the magnets being arranged on the roof-plate in concentric circles, with the polarity of each magnets in each circle being alternated, and the other group of the magnets being arranged around the side wall of the plasma generating chamber in rings, with the polarity of each magnet in each ring being alternated, to form a cusped magnetic field to confine the plasma in the plasma generating chamber; and a holding device which is provided in the plasma generating chamber, to hold a substrate to be processed with the plasma; wherein the magnet means arranged on the roof-plate and the magnet means arranged around the side wall are held in such a way that they can be moved up and down.

Abstract: Dielectric bodies are arranged in waveguide portions for passing microwave radiation and for holding a plasma generating chamber 25 at a vacuum. The dielectric bodies are arranged to intersect at least an electron cyclotron resonance area of the waveguide portions. A tip end portion of the dielectric bodies at a side of the plasma generating chamber are positioned toward at a side of the plasma generating chamber from an intermediate portion in an axial direction length of a first permanent magnet which is arranged by enclosing an outer periphery of the waveguide portions, and a tip end portion of the dielectric bodies at a side of the plasma generating chamber is substantially consistent with an inner face of the plasma generating chamber.

Abstract: An electron beam gas processing apparatus includes a single vacuum vessel maintained at vacuum by means of a vacuum pump and first and second lenses are disposed in the vacuum vessel. An electron beam emitted from an electron source is focused by each of the lenses, and the electron beam is irradiated onto a processing gas in a duct. When the current value of the electron beam is increased as the concentration of NOx in the processing gas increases, the focal distance is decreased by increasing the intensity of magnetic fields or the intensity of electric fields of the lenses in accordance with the current value of a filament, the current value of an arc power supply and the gas pressure in a gas reservoir and the first lens is moved toward a draw-out electrode and the second lens is moved toward the duct, so that a parallel electron beam of constant diameter is formed and the electron beam can be prevented from being increased in focusing diameter.