Patents by Inventor Hirofumi Shimamoto

Hirofumi Shimamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for irradiating laser
    Patent number: 7920277
    Abstract: A laser irradiation process includes: scanning a substrate with laser having a predetermined lasing frequency at different irradiation intensities to form a plurality of first irradiation areas corresponding to the irradiation intensities; illuminating the first irradiation areas to reflected light receive from the first irradiation areas; determining microcrystallization intensity based on the received reflected light; and determining irradiation intensity based on the thus determined microcrystallization intensity. The laser irradiation process uses the irradiation intensity for irradiating a polycrystalline film in a product semiconductor device.
    Type: Grant
    Filed: April 2, 2010
    Date of Patent: April 5, 2011
    Assignees: NEC Corporation, NEC LCD Technologies, Ltd.
    Inventors: Mitsuru Nakata, Hirofumi Shimamoto, Hiroshi Kanoh
  • METHOD AND APPARATUS FOR IRRADIATING LASER
    Publication number: 20100190276
    Abstract: A laser irradiation process includes: scanning a substrate with laser having a predetermined lasing frequency at different irradiation intensities to form a plurality of first irradiation areas corresponding to the irradiation intensities; illuminating the first irradiation areas to reflected light receive from the first irradiation areas; determining microcrystallization intensity based on the received reflected light; and determining irradiation intensity based on the thus determined microcrystallization intensity. The laser irradiation process uses the irradiation intensity for irradiating a polycrystalline film in a product semiconductor device.
    Type: Application
    Filed: April 2, 2010
    Publication date: July 29, 2010
    Applicant: NEC CORPORATION
    Inventors: Mitsuru Nakata, Hirofumi Shimamoto, Hiroshi Kanoh
  • Method and apparatus for irradiating laser
    Patent number: 7724382
    Abstract: A laser irradiation process includes: scanning a substrate with laser having a predetermined lasing frequency at different irradiation intensities to form a plurality of first irradiation areas corresponding to the irradiation intensities; illuminating the first irradiation areas to reflected light receive from the fist irradiation areas; determining microcrystallization intensity based on the received reflected light; and determining irradiation intensity based on the thus determined microcrystallization intensity. The laser irradiation process uses the irradiation intensity for irradiating a polycrystalline film in a product semiconductor device.
    Type: Grant
    Filed: April 19, 2007
    Date of Patent: May 25, 2010
    Assignees: NEC Corporation, NEC LCD Technologies, Ltd.
    Inventors: Mitsuru Nakata, Hirofumi Shimamoto, Hiroshi Kanoh
  • Thin film transistor substrate with low reflectance upper electrode
    Patent number: 7554162
    Abstract: A thin film transistor substrate includes an upper electrode for electrically connecting a transparent picture element electrode to the thin film transistor. The upper electrode includes at least a first metal layer and a second metal layer formed on the first metal layer. The second metal layer has a lower reflectance than the first metal layer and the first metal layer has a region not overlapped by the second metal layer.
    Type: Grant
    Filed: June 23, 2004
    Date of Patent: June 30, 2009
    Assignee: NEC Corporation
    Inventors: Kenichi Hayashi, Hirofumi Shimamoto, Tadahiro Matsuzaki
  • METHOD AND APPARATUS FOR IRRADIATING LASER
    Publication number: 20070249134
    Abstract: A laser irradiation process includes: scanning a substrate with laser having a predetermined lasing frequency at different irradiation intensities to form a plurality of first irradiation areas corresponding to the irradiation intensities; illuminating the first irradiation areas to reflected light receive from the fist irradiation areas; determining microcrystallization intensity based on the received reflected light; and determining irradiation intensity based on the thus determined microcrystallization intensity. The laser irradiation process uses the irradiation intensity for irradiating a polycrystalline film in a product semiconductor device.
    Type: Application
    Filed: April 19, 2007
    Publication date: October 25, 2007
    Applicants: NEC CORPORATION, NEC LCD Technologies, Ltd.
    Inventors: MITSURU NAKATA, Hirofumi Shimamoto, Hiroshi Kanoh
  • Thin film transistor substrate and method of manufacture
    Publication number: 20050062042
    Abstract: A thin film transistor substrate includes an upper electrode for electrically connecting a transparent picture element electrode to the thin film transistor. The upper electrode includes at least a first metal layer and a second metal layer formed on the first metal layer. The second metal layer has a lower reflectance than the first metal layer and the first metal layer has a region not overlapped by the second metal layer.
    Type: Application
    Filed: June 23, 2004
    Publication date: March 24, 2005
    Applicant: NEC CORPORATION
    Inventors: Kenichi Hayashi, Hirofumi Shimamoto, Tadahiro Matsuzaki