Abstract: A substrate processing apparatus according to the present invention includes: a processing tank that stores a processing liquid and accommodates a plurality of substrates; a bubble forming section that includes a plurality of bubble pipes, wherein each of the plurality of bubble pipes is divided into a tubular first discharge unit and a tubular second discharge unit that is coaxial with the first discharge unit, wherein one end on a divided side of the first discharge unit and one end on the divided side of the second discharge unit is closed and a plurality of gas discharge holes are formed on the first and second discharge units, and the plurality of bubble pipes are disposed at an interval in a horizontal direction orthogonal to the arrangement direction below the plurality of substrates to be accommodated in the processing tank; and a plurality of flow rate adjustment units that are provided corresponding to each of the first discharge units and each of the second discharge units and independently adjust

Abstract: A substrate processing device (10) for processing a plurality of substrates disposed at predetermined intervals includes a processing bath (12) that is configured to store processing liquid, and has a side surface (13) extending along a thickness direction of the plurality of substrates, and a discharge unit (14) that is disposed in a bottom portion of the processing bath (12), and is configured to discharge processing liquid in an upward direction toward the side surface (13).

Abstract: Provided are a substrate processing system and a substrate processing method that can obtain expected etching rate and selection ratio, and perform stable processing. A substrate (11) is soaked in processing liquid (12) stored in a processing bath (14). The processing bath (14) is sealed by cover members (21a and 21b), and the inside is pressurized by water vapor from the heated processing liquid (12). Pure water is consecutively added to the processing liquid (12). Internal pressure of the processing bath (14) is measured, a degree of opening of an exhaust valve (41) is increased or decreased based on the internal pressure (Pa), the internal pressure is kept at constant, a water addition amount of the pure water is increased or decreased based on the internal pressure (Pa), and the substrate (11) is processed using the processing liquid (12) at constant concentration and constant temperature.

Abstract: A substrate processing device (10) for processing a plurality of substrates disposed at predetermined intervals includes a processing bath (12) that is configured to store processing liquid, and has a side surface (13) extending along a thickness direction of the plurality of substrates, and a discharge unit (14) that is disposed in a bottom portion of the processing bath (12), and is configured to discharge processing liquid in an upward direction toward the side surface (13).

Abstract: Provided is a substrate processing device including a processing bath (12) configured to store processing liquid, and to process a plurality of substrates (24) disposed at predetermined intervals, first and second discharge units (14b1 and 14b2) including a flow path (14a) in which the processing liquid flows in a thickness direction of the plurality of substrates (12), a plurality of openings (15) formed along the flow path, and leading end surfaces (161 and 162) closing a leading end of the flow path (14a), and a supply path (18) that is configured to supply the processing liquid to proximal ends (14bs and 14be) of the first discharge unit (14b1) and the second discharge unit (14b2), and includes a supply port (20), and a length from the supply port (20) to the leading end surface (162) of the second discharge unit (14b2) is substantially equal to a length from the supply port (20) to the leading end surface (161) of the first discharge unit (14b1).

Abstract: Provided are a substrate processing system and a substrate processing method that can obtain expected etching rate and selection ratio, and perform stable processing. A substrate (11) is soaked in processing liquid (12) stored in a processing bath (14). The processing bath (14) is sealed by cover members (21a and 21b), and the inside is pressurized by water vapor from the heated processing liquid (12). Pure water is consecutively added to the processing liquid (12). Internal pressure of the processing bath (14) is measured, a degree of opening of an exhaust valve (41) is increased or decreased based on the internal pressure (Pa), the internal pressure is kept at constant, a water addition amount of the pure water is increased or decreased based on the internal pressure (Pa), and the substrate (11) is processed using the processing liquid (12) at constant concentration and constant temperature.