Abstract: A method of processing noise in image data by an image processor having a signal-processing portion converting an image signal from an image sensor into a digital signal and outputting the converted signal as image data for each frame, the image data indicating sets of pixel values each having a brightness at a corresponding one of coordinate points arranged in directions of rows and columns is disclosed. The method includes the steps of: extracting pixel values; deciding pixel value; finding autocorrelation coefficients of pixel values which are less than a first threshold value; and deciding random noise in the image.

Abstract: A solid-state image sensor and a method for manufacturing thereof and a semiconductor device and a method for manufacturing thereof are provided. A semiconductor substrate is made to be the thin film without using an SOI substrate and cost is reduced. An edge detection portion having hardness larger than that of a semiconductor substrate is formed in the thickness direction of the semiconductor substrate; the semiconductor substrate is made to be the thin film until a position where the edge detection portion is exposed by chemical mechanical polishing from the rear surface; and means Tr1 for reading out a signal from a photoelectric conversion element PD formed in the substrate are formed on the front surface of the semiconductor substrate, where incident light is acquired from the rear surface of the semiconductor substrate.

Abstract: An imaging element includes an amplifying transistor. A signal charge from the photodiode is transferable to the gate of amplifying transistor, the photodiode being within a semiconductor substrate. The source and drain of the amplifying transistor are electrically isolated from a semiconductor substrate, wherein the source is within a well or the source and drain are within a silicon-on-insulator layer.

Abstract: A pre-amplifier (column region unit) of a solid-state imaging device including a pixel-signal controller. The pixel-signal controller, for each vertical signal line, detects the level of each pixel signal independently by a pixel-signal detector on the output side of a pixel-signal amplifier, and sets a gain independently to the pixel-signal amplifier according to the level of the signal. At a subsequent stage of the solid-state imaging device, an analog-to-digital (A/D) converter and a signal extending unit are provided. The A/D converter digitizes a pixel signal, and the digitized pixel signal is corrected by a gain set to the pixel-signal amplifier with reference to a classification signal from the pixel-signal detector, so that the dynamic range of signals of one screen is extended.

Abstract: A method of processing noise in image data by an image processor having a signal-processing portion converting an image signal from an image sensor into a digital signal and outputting the converted signal as image data for each frame, the image data indicating sets of pixel values each having a brightness at a corresponding one of coordinate points arranged in directions of rows and columns is disclosed. The method includes the steps of: extracting pixel values; deciding pixel value; finding autocorrelation coefficients of pixel values which are less than a first threshold value; and deciding random noise in the image.

Abstract: A pre-amplifier (column region unit) of a solid-state imaging device includes a pixel-signal controller. The pixel-signal controller, for each vertical signal line, detects the level of each pixel signal independently by a pixel-signal detector on the output side of a pixel-signal amplifier, and sets a gain independently to the pixel-signal amplifier according to the level of the signal. At a subsequent stage of the solid-state imaging device, an analog-to-digital (A/D) converter and a signal extending unit are provided. The A/D converter digitizes a pixel signal, and the digitized pixel signal is corrected by a gain set to the pixel-signal amplifier with reference to a classification signal from the pixel-signal detector, so that the dynamic range of signals of one screen is extended.

Abstract: A method of processing noise in image data by an image processor having a signal-processing portion converting an image signal from an image sensor into a digital signal and outputting the converted signal as image data for each frame, the image data indicating sets of pixel values each having a brightness at a corresponding one of coordinate points arranged in directions of rows and columns is disclosed. The method includes the steps of: extracting pixel values; deciding pixel value; finding autocorrelation coefficients of pixel values which are less than a first threshold value; and deciding random noise in the image.

Abstract: A method for manufacturing a semiconductor device for detecting a physical amount distribution, the semiconductor device comprising unit components arrayed in a predetermined order, the unit components each including a unit signal generation portion for detecting an electromagnetic wave and outputting the corresponding unit signal. A diffraction grating is provided on the incident light side of a spectral image sensor, the diffraction grating including scatterers, slits, and scatterers disposed in that order. An electromagnetic wave is scattered by the scatterers to produce diffracted waves, and by using the fact that interference patterns between the diffracted waves change with wavelengths, signals are detected for respective wavelengths by photoelectric conversion elements in each photodiode group.

Abstract: A solid-state image sensor and a method for manufacturing thereof and a semiconductor device and a method for manufacturing thereof are provided. A semiconductor substrate is made to be the thin film without using an SOI substrate and cost is reduced. An edge detection portion having hardness larger than that of a semiconductor substrate is formed in the thickness direction of the semiconductor substrate; the semiconductor substrate is made to be the thin film until a position where the edge detection portion is exposed by chemical mechanical polishing from the rear surface; and means Tr1 for reading out a signal from a photoelectric conversion element PD formed in the substrate are formed on the front surface of the semiconductor substrate, where incident light is acquired from the rear surface of the semiconductor substrate.

Abstract: An imager having superior separation properties is provided in which a visible image and an infrared image can be independently and simultaneously obtained. The above imager has a wavelength separation portion of separating an electromagnetic wave carrying an image into wavelengths, and image-taking portions detecting the visible image and the infrared image described above. In the imager described above, at least one of the image-taking portions has a detecting part which is optimized to detect a wavelength component which is to be detected.

Abstract: A solid-state image sensor and a method for manufacturing thereof and a semiconductor device and a method for manufacturing thereof are provided. A semiconductor substrate is made to be the thin film without using an SOI substrate and cost is reduced. An edge detection portion having hardness larger than that of a semiconductor substrate is formed in the thickness direction of the semiconductor substrate; the semiconductor substrate is made to be the thin film until a position where the edge detection portion is exposed by chemical mechanical polishing from the rear surface; and means Tr1 for reading out a signal from a photoelectric conversion element PD formed in the substrate are formed on the front surface of the semiconductor substrate, where incident light is acquired from the rear surface of the semiconductor substrate.

Abstract: The method for manufacturing a camera module of the present invention includes forming a bump on each electrode portion of an imaging element. Next, a through hole is formed in a substrate. The imaging element is then mounted on a first side of the substrate having at least one bump such that a light receiving portion of the imaging element receives light via the through-hole of the substrate. A periphery of the imaging element is sealed to the substrate. Next, a lens unit is mounted on a second side of the substrate.

Abstract: The system and apparatus of the present invention are directed to a camera module in which an operational defect (generation of a ghost image) as a result of a reduction in thickness is eliminated. The camera module includes a substrate provided with a through-hole for light transmission, a light receiving portion provided on a first surface of an imaging element. The imaging element is flip chip mounted on a first side of the substrate such that the light receiving portion is exposed through the through-hole, and a shielding layer on a back surface of the imaging element wherein the back surface is opposite the first surface having the light receiving portion. A lens unit is mounted a second side of the substrate.

Abstract: An imager having superior separation properties is provided in which a visible image and an infrared image can be independently and simultaneously obtained. The above imager has a wavelength separation portion of separating an electromagnetic wave carrying an image into wavelengths, and image-taking portions detecting the visible image and the infrared image described above. In the imager described above, at least one of the image-taking portions has a detecting part which is optimized to detect a wavelength component which is to be detected.

Abstract: A solid-state image sensor and a method for manufacturing thereof and a semiconductor device and a method for manufacturing thereof are provided. A semiconductor substrate is made to be the thin film without using an SOI substrate and cost is reduced. An edge detection portion having hardness larger than that of a semiconductor substrate is formed in the thickness direction of the semiconductor substrate; the semiconductor substrate is made to be the thin film until a position where the edge detection portion is exposed by chemical mechanical polishing from the rear surface; and means Tr1 for reading out a signal from a photoelectric conversion element PD formed in the substrate are formed on the front surface of the semiconductor substrate, where incident light is acquired from the rear surface of the semiconductor substrate.

Abstract: To enable an imaging apparatus to achieve high resolution and sufficient color reproducibility. A diffraction grating 1 is provided on the incident light side of a spectral image sensor 10, the diffraction grating 1 including scatterers such as scatterers 3, slits 5, and scatterers 7 which are disposed in that order. An electromagnetic wave is scattered by the scatterers to produce diffracted waves, and by using the fact that interference patterns between the diffracted waves change with wavelengths, signals are detected for respective wavelengths by photoelectric conversion elements 12B, 12G, and 12R in each photodiode group 12.

Abstract: A pre-amplifier (column region unit) of a solid-state imaging device includes a pixel-signal controller. The pixel-signal controller, for each vertical signal line, detects the level of each pixel signal independently by a pixel-signal detector on the output side of a pixel-signal amplifier, and sets a gain independently to the pixel-signal amplifier according to the level of the signal. At a subsequent stage of the solid-state imaging device, an analog-to-digital (A/D) converter and a signal extending unit are provided. The A/D converter digitizes a pixel signal, and the digitized pixel signal is corrected by a gain set to the pixel-signal amplifier with reference to a classification signal from the pixel-signal detector, so that the dynamic range of signals of one screen is extended.

Abstract: The method for manufacturing a camera module of the present invention includes forming a bump on each electrode portion of an imaging element. Next, a through hole is formed in a substrate. The imaging element is then mounted on a first side of the substrate having at least one bump such that a light receiving portion of the imaging element receives light via the through-hole of the substrate. A periphery of the imaging element is sealed to the substrate. Next, a lens unit is mounted on a second side of the substrate.

Abstract: A solid-state image-sensing device has pn-junction sensor parts isolated corresponding to pixels by a device isolation layer. The solid-state image-sensing device includes a first-conductivity-type second semiconductor well region formed between a first-conductivity-type first semiconductor well region and the device isolation layer. When the device is operating, a depletion layer of each sensor part spreads to the first semiconductor well region, which is beneath each of the sensor parts.

Abstract: A solid-state image-sensing device has pn-junction sensor parts isolated corresponding to pixels by a device isolation layer. The solid-state image-sensing device includes a first-conductivity-type second semiconductor well region formed between a first-conductivity-type first semiconductor well region and the device isolation layer. When the device is operating, a depletion layer of each sensor part spreads to the first semiconductor well region, which is beneath each of the sensor parts.