Abstract: A semiconductor device includes a substrate having a front surface and a mounting surface that are separate from each other in a thickness direction. The substrate is formed with a through-hole that penetrates through in the thickness direction. A semiconductor element is mounted on the front surface of the substrate, and a front-surface wire line is formed on the front surface of the substrate to be electrically connected to the semiconductor element. A column is provided inside the through-hole, and is electrically connected to the front-surface wiring line. An electrode pad is provided on the mounting surface of the substrate, and is electrically connected to the column. A resin-layer through portion is also provided inside the through-hole. The semiconductor element is covered with a sealing resin. The resin-layer through portion has an orthogonal surface in contact with the column. The orthogonal surface is orthogonal to the mounting surface.

Abstract: A method for detecting gas leakage from a radioactive material sealed container includes measuring a temperature at a bottom portion of a metallic sealed container. A feeding air temperature of external air passing between the metallic sealed container and a concrete-made storage container is also measured. Presence of leakage of inactive gas is determined by comparing the temperatures or by utilizing a physical amount calculated by using the temperatures.

Abstract: A method for detecting gas leakage from a radioactive material sealed container includes measuring a temperature at a top portion of a metallic sealed container, a temperature at a bottom portion of a lid portion of a concrete-made storage container facing the top portion of the metallic sealed container, or a temperature of a member existing between the bottom portion of the lid portion and the top portion of the metallic sealed container. An inner temperature of the lid portion of the concrete-made storage container is also measured. Presence of leakage of inactive gas is estimated by comparing the temperatures.

Abstract: A semiconductor device is provided. The semiconductor device can be manufactured with a reduced cost. The semiconductor device (1D) includes, a substrate (100D), which includes a main surface (101D) and a recess (108D) depressed from the main surface (101D), and includes a semiconductor material; a wiring layer (200D) in which at least a portion thereof is formed on the substrate (100D); one or more first elements (370D) accommodated in the recess (108D); a sealing resin (400D) covering at least a portion of the one or more first elements (370D) and filled in the recess (108D); and a plurality of columnar conductive portions (230D) penetrating through the sealing resin (400D) in the depth direction of the recess (108D), and respectively connected with the portion of the wiring layer (200D) that is formed at the recess (108D).

Abstract: A cooling air amount adjustment device of a concrete cask is provided. The device includes at least one of an air outlet port opening level adjustment mechanism and an air inlet port opening level adjustment mechanism which are adapted to automatically perform adjustment to reduce a flow rate of a cooling air when a temperature of the cooling air at an air outlet port is lower than an adjustment reference temperature, and adjustment to increase the flow rate of the cooling air so as to restore the flow rate of the cooling air when the temperature of the cooling air at the air outlet port is higher than the adjustment reference temperature.

Abstract: A method for detecting gas leakage from a radioactive material sealed container includes measuring a temperature at a bottom portion of a metallic sealed container. A feeding air temperature of external air passing between the metallic sealed container and a concrete-made storage container is also measured. Presence of leakage of inactive gas is determined by comparing the temperatures or by utilizing a physical amount calculated by using the temperatures.

Abstract: A semiconductor device is provided. The semiconductor device can be manufactured with a reduced cost. The semiconductor device (1D) includes, a substrate (100D), which includes a main surface (101D) and a recess (108D) depressed from the main surface (101D), and includes a semiconductor material; a wiring layer (200D) in which at least a portion thereof is formed on the substrate (100D); one or more first elements (370D) accommodated in the recess (108D); a sealing resin (400D) covering at least a portion of the one or more first elements (370D) and filled in the recess (108D); and a plurality of columnar conductive portions (230D) penetrating through the sealing resin (400D) in the depth direction of the recess (108D), and respectively connected with the portion of the wiring layer (200D) that is formed at the recess (108D).

Abstract: A method for detecting gas leakage from a radioactive material sealed container includes measuring a temperature at a top portion of a metallic sealed container, a temperature at a bottom portion of a lid portion of a concrete-made storage container facing the top portion of the metallic sealed container, or a temperature of a member existing between the bottom portion of the lid portion and the top portion of the metallic sealed container. An inner temperature of the lid portion of the concrete-made storage container is also measured. Presence of leakage of inactive gas is estimated by comparing the temperatures.

Abstract: A semiconductor device includes a semiconductor element, a semiconductor substrate on which the semiconductor element is mounted, a conductive layer formed on the substrate, and a sealing resin covering the semiconductor element. The substrate is formed with a recess receding from a main surface of the substrate and including a bottom surface and first and second sloped surfaces spaced apart from each other in a first direction perpendicular to the thickness direction of the substrate. The conductive layer includes first conduction paths on the first sloped surface, second conduction paths on the second sloped surface and bottom conduction paths on the bottom surface. The second sloped surface includes exposed regions line-symmetrical to the first conduction paths with respect to a line perpendicular to both the thickness direction of the substrate and the first direction, and the second conduction paths are not disposed at the exposed regions.

Abstract: A semiconductor device is provided. The semiconductor device can be manufactured with a reduced cost. The semiconductor device (1D) includes, a substrate (100D), which includes a main surface (101D) and a recess (108D) depressed from the main surface (101D), and includes a semiconductor material; a wiring layer (200D) in which at least a portion thereof is formed on the substrate (100D); one or more first elements (370D) accommodated in the recess (108D); a sealing resin (400D) covering at least a portion of the one or more first elements (370D) and filled in the recess (108D); and a plurality of columnar conductive portions (230D) penetrating through the sealing resin (400D) in the depth direction of the recess (108D), and respectively connected with the portion of the wiring layer (200D) that is formed at the recess (108D).

Abstract: A semiconductor device is provided. The semiconductor device can be manufactured with a reduced cost. The semiconductor device (1D) includes, a substrate (100D), which includes a main surface (101D) and a recess (108D) depressed from the main surface (101D), and includes a semiconductor material; a wiring layer (200D) in which at least a portion thereof is formed on the substrate (100D); one or more first elements (370D) accommodated in the recess (108D); a sealing resin (400D) covering at least a portion of the one or more first elements (370D) and filled in the recess (108D); and a plurality of columnar conductive portions (230D) penetrating through the sealing resin (400D) in the depth direction of the recess (108D), and respectively connected with the portion of the wiring layer (200D) that is formed at the recess (108D).

Abstract: A vehicle such as straddle type suitable for running on a rough has a front wheel, which is steered, disposed in front of a vehicle body frame and a rear wheel disposed to the rear side thereof. Such vehicle is provided with a vehicle body frame structure which comprises a front frame unit, a center frame unit, and a rear frame unit. These front and center and rear frame units are first assembled individually as a unit and then coupled together integrally as a vehicle body frame structure.

Abstract: A vehicle such as straddle type suitable for running on a rough has a front wheel, which is steered, disposed in front of a vehicle body frame and a rear wheel disposed to the rear side thereof. Such vehicle is provided with a vehicle body frame structure which comprises a front frame unit, a center frame unit, and a rear frame unit. These front and center and rear frame units are first assembled individually as a unit and then coupled together integrally as a vehicle body frame structure.

Abstract: A powder paint composition and application method therefor are provided which can form a paint coating which has superior mar resistance and for which the external appearance, such as its smoothness and sharpness, is excellent.This paint powder composition comprises a multi-functional vinyl-type copolymer (A) which has a glass transition temperature of 40.degree. C. and which contains functional groups which are reactable with carboxylic acid; a polycarboxylic acid (B); and a multi-functional vinyl-type copolymer (C) which has a glass transition temperature of 0.degree. C. and which contains functional groups which are reactable with carboxylic acid.

Abstract: An automatic method for switching a right of management/control for a shared-storage unit between a plurality of service processors in a cluster-coupled system having a shared-storage unit with a service processor selecting register and a plurality of clusters connected to the shared-storage unit, each clusters having a service processor, includes the steps of: registering a physical number of the service processor which acquires the right of management/control in the service processor selecting register; and providing a communication line connecting all service processor; wherein when a first cluster detects power-off or hang-up message from the cluster which includes the service processor registered in the service processor selecting register through the communication line, the first cluster determines a new physical number of the service processor which acquires the right of management/control based on a predetermined decision theory, and registers the determined physical number in the service processor se

Abstract: A coating resin composition comprising (I) a vinyl polymer obtained by polymerizing (A) 1 to 100% by weight of a vinyl monomer having at least one unsaturated double bond and at least one siloxy group per molecule and (B) 99 to 0% by weight of a copolymerizable vinyl monomer other than (A) in the presence of a radical generator and (II) a curing agent having reactivity with the hydroxyl groups generated from the polymer (I), and optionally (III) a siloxy group-dissociating catalyst.

Abstract: A resin composition for use in a powder paint. The composition is either a composition (I) compriisng (A) a polyester resin containing both carboxyl and hydroxyl groups, (B-1) a vinyl monomer containing both (beta-methyl)glycidyl and hydroxyl groups and (C) a blocked isocyanate in a weight ratio of 60-96:3-40:1-20, or a composition (II) comprising (A) a polyester resin containing both carboxyl and hydroxyl groups, (B-2) a (beta-methyl) glycidyl group-containing vinyl polymer, (B-3) a hydroxyl group-containing vinyl polymer, and (C) a blocked isocyanate in a weight ratio of 60-96:3-40:3-40:1-20.

Abstract: A gate circuit device of an integrated circuit tester, for variably setting the signal propagation delay time of various integrated circuits to be tested at a predetermined value, includes a gate circuit having a pair of emitter coupled transistors and a constant current source transistor connected to the emitter side of the pair of transistors, and a terminal to apply a predetermined level of voltage to the base of the constant current source transistor to control the constant current. In addition to this manner of the voltage control of signal propagation delay time, a current adjustment circuit is utilized to generate current in a constant current source transistor in response to the control current. Thus, the gate circuit device controls the signal propagation delay time by regulating either voltage or current in response to the control current.

Abstract: A machine used for operations of pull-on and pull-out of a water dampener cover to and from the rubber roller of an offset printing press includes a roller holding apparatus for firmly holding the rubber roller constituting a main part of dampening roller or the used dampening roller with a water dampener cover fitted over the surface of the rubber roller and a cover pulling apparatus for pulling the water dampener cover fitted onto the one end of the rubber roller or the water dampener cover fitted over the whole surface of the water dampening roller in the axial direction of the rubber roller while grasping the one end of the water dampener cover to fit the cover over the rubber roller or remove the former from the latter.

Abstract: An emitter coupled logic circuit includes a differential transistor pair and a set transistor, which are all emitter coupled. The logic level of the high voltage side of a set input signal to be applied, as a control input signal, to the set transistor is higher than the logic level of the high voltage side of the logic input signal pair to be applied, as control input signals, to the differential transistor pair. Simultaneously, the logic level of the low voltage side of the set input signal is lower than the logic level of the low voltage side of the logic input signal pair.