Abstract: A substrate processing apparatus includes: a holding unit, a processing cup, a first supply unit, a second supply unit, a drain unit, and a first measurement unit. The holding unit holds a substrate. The processing cup is provided around the holding unit. The first supply unit supplies a chemical liquid to the substrate held by the holding unit. The second supply unit supplies a rinse liquid or a drying liquid to the substrate held by the holding unit. The drain unit is provided at the bottom of the processing cup, and is connected to a drain line and a recovery line via a line switch. The first measurement unit is provided in the drain unit, and measures the purity of the rinse liquid or the drying liquid.

Abstract: A substrate processing method includes a first cleaning process and a second cleaning process. In the first cleaning process, a substrate is cleaned with a first cleaning solution. In the second cleaning process, the substrate is cleaned with a second cleaning solution having a lower cleanliness than the first cleaning solution after the first cleaning process.

Abstract: A substrate processing method includes: a first processing step of supplying a first processing liquid to a surface of a substrate under rotation to cover the surface of the substrate with a liquid film of the first processing liquid; and a second processing step of supplying a second processing liquid having a surface tension smaller than that of the first processing liquid to the surface of the substrate to cover the surface of the substrate with a liquid film of the second processing liquid by substituting the first processing liquid with the second processing liquid, wherein the second processing step includes: a first stage of simultaneously supplying both the first processing liquid and the second processing liquid to the surface of the substrate, and a second stage of supplying the second processing liquid to a central portion of the surface of the substrate without supplying the first processing liquid.

Abstract: There is provided a method of developing an exposed resist film formed on a surface of a substrate to form a resist pattern, which includes: rotating the substrate about a rotation axis that extends in a direction perpendicular to the surface of the substrate that is horizontally supported; supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film; and positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate, the preceding region being a region to which the developing solution is preferentially supplied through the discharge hole.

Abstract: A substrate processing method includes a first cleaning process and a second cleaning process. In the first cleaning process, a substrate is cleaned with a first cleaning solution. In the second cleaning process, the substrate is cleaned with a second cleaning solution having a lower cleanliness than the first cleaning solution after the first cleaning process.

Abstract: There is provided a method of developing an exposed resist film formed on a surface of a substrate to form a resist pattern, which includes: rotating the substrate about a rotation axis that extends in a direction perpendicular to the surface of the substrate that is horizontally supported; supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film; and positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate, the preceding region being a region to which the developing solution is preferentially supplied through the discharge hole.

Abstract: There is provided a method of developing an exposed resist film formed on a surface of a substrate to form a resist pattern, which includes: rotating the substrate about a rotation axis that extends in a direction perpendicular to the surface of the substrate that is horizontally supported; supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film; and positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate, the preceding region being a region to which the developing solution is preferentially supplied through the discharge hole.

Abstract: A solution treatment apparatus connected to a supply nozzle that supplies a treatment solution to a substrate, includes: a supply pipeline connecting a treatment solution storage container and the supply nozzle; a filter apparatus provided in the supply pipeline; a pump on a secondary side of the filter apparatus; a circulation pipeline connecting a discharge side of the pump and an intake side of the filter apparatus; a supply control valve provided in the supply pipeline on a secondary side of the pump; a circulation control valve provided in the circulation pipeline; and a control unit, wherein the control unit opens the circulation control valve and drives the pump when supply of the treatment solution from the supply nozzle to the substrate is stopped by closing the supply control valve, to thereby circulate the treatment solution between the supply pipeline having the filter apparatus and the circulation pipeline.

Abstract: A liquid processing apparatus includes a holding device, a rotation device, and a processing fluid supply device including a nozzle positioned to face a surface of a substrate, a first supply path connected to the nozzle, and a second supply path connected to the nozzle such that the supply device supplies processing liquid to the substrate. The nozzle has a common flow path extending in radial direction from center portion toward peripheral portion of the substrate, and discharge ports connected to the common path and positioned in the radial direction, the first path is connected to the common path and supplies first liquid to the common path, the second path is connected to the common path and supplies second liquid to the common path that is different from the first liquid in temperature and/or concentration, and the first and second paths are communicatively connected each other via the common path.

Abstract: A developing method for forming a resist film having a high uniformity of CD distribution. After exposure of a resist film on a substrate surface to form a resist pattern, the method includes sequential steps of: (A) supplying a developer to the rotating substrate; (B) reacting the resist film with the developer; and (C) removing the developer from the surface of the resist film to terminate the reaction of the resist film with the developer. In step (A), a liquid-contact nozzle, having an ejection orifice for the developer and a lower surface extending laterally from the ejection orifice and disposed opposite the resist film, is used. In step (C), the boundary between a reaction-terminated area of the surface of the resist film, and an in-progress reaction area of the surface of the resist film, is moved from the center toward the periphery of the resist film.

Abstract: A solution treatment apparatus connected to a supply nozzle that supplies a treatment solution to a substrate, includes: a supply pipeline connecting a treatment solution storage container and the supply nozzle; a filter apparatus provided in the supply pipeline; a pump on a secondary side of the filter apparatus; a circulation pipeline connecting a discharge side of the pump and an intake side of the filter apparatus; a supply control valve provided in the supply pipeline on a secondary side of the pump; a circulation control valve provided in the circulation pipeline; and a control unit, wherein the control unit opens the circulation control valve and drives the pump when supply of the treatment solution from the supply nozzle to the substrate is stopped by closing the supply control valve, to thereby circulate the treatment solution between the supply pipeline having the filter apparatus and the circulation pipeline.

Abstract: A solution treatment apparatus connected to a supply nozzle that supplies a treatment solution to a substrate, includes: a supply pipeline connecting a treatment solution storage container and the supply nozzle; a filter apparatus provided in the supply pipeline; a pump on a secondary side of the filter apparatus; a circulation pipeline connecting a discharge side of the pump and an intake side of the filter apparatus; a supply control valve provided in the supply pipeline on a secondary side of the pump; a circulation control valve provided in the circulation pipeline; and a control unit, wherein the control unit opens the circulation control valve and drives the pump when supply of the treatment solution from the supply nozzle to the substrate is stopped by closing the supply control valve, to thereby circulate the treatment solution between the supply pipeline having the filter apparatus and the circulation pipeline.

Abstract: A solution treatment apparatus connected to a supply nozzle that supplies a treatment solution to a substrate, includes: a supply pipeline connecting a treatment solution storage container and the supply nozzle; a filter apparatus provided in the supply pipeline; a pump on a secondary side of the filter apparatus; a circulation pipeline connecting a discharge side of the pump and an intake side of the filter apparatus; a supply control valve provided in the supply pipeline on a secondary side of the pump; a circulation control valve provided in the circulation pipeline; and a control unit, wherein the control unit opens the circulation control valve and drives the pump when supply of the treatment solution from the supply nozzle to the substrate is stopped by closing the supply control valve, to thereby circulate the treatment solution between the supply pipeline having the filter apparatus and the circulation pipeline.

Abstract: A solution treatment apparatus connected to a supply nozzle that supplies a treatment solution to a substrate, includes: a supply pipeline connecting a treatment solution storage container and the supply nozzle; a filter apparatus provided in the supply pipeline; a pump on a secondary side of the filter apparatus; a circulation pipeline connecting a discharge side of the pump and an intake side of the filter apparatus; a supply control valve provided in the supply pipeline on a secondary side of the pump; a circulation control valve provided in the circulation pipeline; and a control unit, wherein the control unit opens the circulation control valve and drives the pump when supply of the treatment solution from the supply nozzle to the substrate is stopped by closing the supply control valve, to thereby circulate the treatment solution between the supply pipeline having the filter apparatus and the circulation pipeline.

Abstract: A developing method includes: forming a puddle of a developer on a surface of the substrate held by the substrate holding unit by a first developer nozzle; subsequently spreading the puddle of the developer over the whole substrate surface, by moving the first developer nozzle discharging the developer from a central or peripheral part to the peripheral or central part of the rotating substrate, with a contacting part of the first developer nozzle contacting with the puddle; supplying the developer from a second developer nozzle onto the rotating substrate, thereby to uniformize, in the substrate plane, distribution of a degree of progress of development by the developer spreading step; and removing the developer between the developer spreading step and the developer supplying step to remove the developer on the substrate.

Abstract: A developing method includes: forming a puddle of a developer on a surface of the substrate held by the substrate holding unit by a first developer nozzle; subsequently spreading the puddle of the developer over the whole substrate surface, by moving the first developer nozzle discharging the developer from a central or peripheral part to the peripheral or central part of the rotating substrate, with a contacting part of the first developer nozzle contacting with the puddle; supplying the developer from a second developer nozzle onto the rotating substrate, thereby to uniformize, in the substrate plane, distribution of a degree of progress of development by the developer spreading step; and removing the developer between the developer spreading step and the developer supplying step to remove the developer on the substrate.

Abstract: A developing method including a developing step in which, while a wafer horizontally held by a spin chuck is being rotated, the wafer is developed by supplying a developer onto a surface of the wafer, wherein provided before the developing step is a pre-wetting step in which, simultaneously with the developer being supplied from a first nozzle that is located on a position near a central part of the surface of the rotating wafer, a deionized water as a second liquid is supplied from a second nozzle that is located on a position nearer to an outer peripheral part of the wafer than the first nozzle, to thereby spread out the developer in the rotating direction of the wafer by a wall that is formed by the deionized water flowing to the outer peripheral side of the wafer with the rotation of the wafer.

Abstract: There is provided a method of developing an exposed resist film formed on a surface of a substrate to form a resist pattern, which includes: rotating the substrate about a rotation axis that extends in a direction perpendicular to the surface of the substrate that is horizontally supported; supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film; and positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate, the preceding region being a region to which the developing solution is preferentially supplied through the discharge hole.

Abstract: There is provided a developing method which can form a resist having a sufficiently high uniformity of CD distribution. The developing method for developing a resist film after exposure on a substrate surface to form a resist pattern, includes the sequential steps of: (A) supplying a developer to the rotating substrate; (B) reacting the resist film with the developer; and (C) removing the developer from the surface of the resist film to terminate the reaction of the resist film with the developer.

Abstract: A pretreatment process, carried out prior to a developing process, spouts pure water, namely, a diffusion-assisting liquid for assisting the spread of a developer over the surface of a wafer, through a cleaning liquid spouting nozzle onto a central part of the wafer to form a puddle of pure water. The developer is spouted onto the central part of the wafer for prewetting while the wafer is rotated at a high rotating speed to spread the developer over the surface of the wafer. The developer dissolves the resist film partly and produces a solution. The rotation of the wafer is reversed, for example, within 7 s in which the solution is being produced to reduce the water-repellency of the wafer by spreading the solution over the entire surface of the wafer. Then, the developer is spouted onto the rotating wafer to spread the developer on the surface of the wafer.