Patents by Inventor Hirofumi Toujou

Hirofumi Toujou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor pressure sensor and its manufacturing method
    Patent number: 6619133
    Abstract: That portion of an n-type single-crystal Si layer 1 which corresponds to a pressure-sensitive region is etched to an SiO2 layer 2 by using the SiO2 layer 2 as an etching stopper layer. The SiO2 layer 2 exposed by this etching is removed. The pressure-sensitive region of the n-type single-crystal Si layer 3 is etched by a predetermined amount to form a diaphragm 4. Thus, the SiO2 layer 2 is removed from the diaphragm 4 and a diaphragm edge portion 6.
    Type: Grant
    Filed: October 1, 2000
    Date of Patent: September 16, 2003
    Assignee: Yamatake Corporation
    Inventors: Yasuhiro Goshoo, Hirofumi Toujou, Masayuki Yoneda, Takeshi Fukiura