Abstract: A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer, a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer, a deep trench configured to isolate a plurality of neighboring pixels from each other, and an electrode implanted into the deep trench, where the semiconductor region of second conductivity, the second semi-conducting layer, and the first semi-conducting layer are disposed in that order from a proximal side to a distal side, the second semi-conducting layer is split by the deep trench into sections that correspond to the pixels, an impurity concentration of first conductivity of the first semi-conducting layer is higher than an impurity concentration of first conductivity of the second semi-conducting layer, and the deep trench contacts the first semi-conducting layer.

Abstract: A photoelectric conversion device includes a first output line, a second output line; and a photoelectric conversion cell. The photoelectric conversion cell further includes, a photoelectric conversion element configured to generate an output current corresponding to an intensity of incident light, a first switch element configured to transmit the first output current to the first output line according to a first control signal, and a second switch element configured to transmit the second output current to second output line according to a second control signal. As a result, the photoelectric conversion device can be provided to generate rapidly the image data with wide dynamic range without the need for complex control outside of the photoelectric conversion device.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device are disclosed. The method includes forming a trench, in a vertical direction of a semiconductor substrate having a plurality of photoelectric converting elements arranged on the semiconductor device, at positions between the photoelectric converting elements that are next to each other, forming a first conductive-material layer in and above the trench by implanting a first conductive material into the trench after an oxide film is formed on an inner wall of the trench, forming a first conductor by removing the first conductive-material layer excluding a first conductive portion of the first conductive-material layer implanted into the trench, and forming an upper gate electrode above the first conductor, the upper gate electrode configured to be conductive with the first conductor. The semiconductor device includes a semiconductor substrate, an image sensor, a trench, a first conductor, and an upper gate electrode.

Abstract: A phototransistor includes a first emitter region, a first base region having at least a portion exposed to a light-receiving side, and a first collector region in this order from the light-receiving side in a depth direction. The first collector region includes a second collector region and a third collector region that is in contact with a downstream side of the second collector region in the depth direction and has a resistance lower than that of the second collector region. The phototransistor further includes a first region that is spaced away from the first base region at an outer side of the first base region on a light-receiving side surface thereof, the first region having a conductivity type opposite to that of the first collector region.

Abstract: In a thermally insulated double pipe, a structure is provided in which an inner pipe may be prevented from being appreciably offset relative to an outer pipe due to thermal contraction. The structure includes an inner pipe 101, within which a superconducting cable is mounted, an outer pipe 103 within which the inner pipe is housed, with the inner and outer pipes constituting a thermally insulated double pipe, and an inner pipe support member 104 supporting the inner pipe. The inner pipe support member 104 is secured to the inner and outer pipes.

Abstract: To increase vibration resistance of a connection terminal, a tip of which is soldered to a circuit board. In a controller, the circuit board is accommodated in a controller housing made of metal, and the tip of the connection terminal that extends from an actuator housing through an opening is fixed to the circuit board. Semiconductor switching elements and electrolytic capacitors as heat generating components are collectively arranged in an area of the circuit board adjacent to the connection terminal, and the circuit board is adhered and fixed to a top surface of a heat mass via a thermal conductive adhesive. At the same time as that heat dissipation is improved by the thermal conductive adhesive, a load caused by vibration is reduced because the circuit board is fixed at a position near the connection terminal to the controller housing.

Abstract: A semiconductor device includes a semiconductor layer, an electrode embedded from a surface of the semiconductor layer to an inside of the semiconductor layer and insulated by an insulation layer, and a structure in which a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type are formed in this order from the surface of the semiconductor layer along the electrode via the insulation layer. The electrode is arranged at a position where no inversion layer is formed by a voltage supplied to the electrode in at least one of an interface of the first semiconductor region and the second semiconductor region and an interface of the second semiconductor region and the third semiconductor region.

Abstract: A photoelectric conversion device includes a pixel cell including a phototransistor, a reference cell including a reference transistor having a temperature characteristic identical to that of the phototransistor and having a fixed electrical state, an analog-to-digital converter that converts an analog output of the pixel cell into a digital output, a correction amount computation unit that computes a correction amount for the digital output of the analog-to-digital converter based on an output of the reference cell and a reference value, and a correction unit that corrects the digital output of the analog-to-digital converter based on the correction amount.

Abstract: The invention relates to a semiconductor device having a vertical transistor bipolar structure of emitter, base, and collector formed in this order from a semiconductor substrate surface in a depth direction. The semiconductor device includes an electrode embedded from the semiconductor substrate surface into the inside and insulated by an oxide film. In the surface of the substrate, a first-conductivity-type first semiconductor region, a second-conductivity-type second semiconductor region, and a first-conductivity-type third semiconductor region are arranged, from the surface side, inside a semiconductor device region surrounded by the electrode and along the electrode with the oxide film interposed therebetween, the second semiconductor region located below the first semiconductor region, the third semiconductor region located below the second semiconductor region.

Abstract: A photoelectric converter includes a first pn junction comprised of at least two semiconductor regions of different conductivity types, and a first field-effect transistor including a first source connected with one of the semiconductor regions, a first drain, a first insulated gate and a same conductivity type channel as that of the one of the semiconductor regions. The first drain is supplied with a second potential at which the first pn junction becomes zero-biased or reverse-biased relative to a potential of the other of the semiconductor regions. When the first source turns to a first potential and the one of the semiconductor regions becomes zero-biased or reverse-biased relative to the other semiconductor regions, the first pn junction is controlled not to be biased by a deep forward voltage by supplying a first gate potential to the first insulated gate, even when either of the semiconductor regions is exposed to light.

Abstract: A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer, a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer, a deep trench configured to isolate a plurality of neighboring pixels from each other, and an electrode implanted into the deep trench, where the semiconductor region of second conductivity, the second semi-conducting layer, and the first semi-conducting layer are disposed in that order from a proximal side to a distal side, the second semi-conducting layer is split by the deep trench into sections that correspond to the pixels, an impurity concentration of first conductivity of the first semi-conducting layer is higher than an impurity concentration of first conductivity of the second semi-conducting layer, and the deep trench contacts the first semi-conducting layer.

Abstract: In a thermally insulated double pipe, a structure is provided in which an inner pipe may be prevented from being appreciably offset relative to an outer pipe due to thermal contraction. The structure includes an inner pipe 101, within which a superconducting cable is mounted, an outer pipe 103 within which the inner pipe is housed, with the inner and outer pipes constituting a thermally insulated double pipe, and an inner pipe support member 104 supporting the inner pipe. The inner pipe support member 104 is secured to the inner and outer pipes.

Abstract: An electronic control apparatus includes an electric motor including a rotor and a stator; a circuit board configured to drivingly control the electric motor; and a housing unit accommodating the electric motor and the circuit board. A vehicle-body attaching portion of the housing unit is attached and fixed to a vehicle body. The vehicle-body attaching portion is located on one side of the rotor with respect to an extending direction of the rotor. At least one of both surfaces of the circuit board is a component-mounting surface. The circuit board is fixed to the housing unit in a state where the both surface of the circuit board extend along the rotor of the electric motor. A large-size electronic component is mounted on a vehicle-body-attaching-portion-side portion of a peripheral portion of the component-mounting surface which is close to the vehicle-body attaching portion.

Abstract: An image pickup module is provided with: lenses; a lens support unit that supports the lenses in a freely movable manner in the optical axis direction; an image pickup unit that detects light from the lenses and outputs an image signal; an operation information storage unit in which information about the operating state of the image pickup unit is stored; and a lens drive control unit including a drive circuit for driving the lenses in the optical axis direction and a drive method switching circuit for switching the drive method therefor between linear drive and pulse drive. The drive method switching circuit of the lens drive control unit is made so as to switch the drive method in accordance with the operating state information stored in the operation information storage unit.

Abstract: An imaging device having phototransistors in photodetectors of pixels is disclosed. The imaging device includes an implanted electrode configured to separate the pixels, a first emitter disposed at a position adjacent to the implanted electrode, and a second emitter disposed such that a distance from the implanted electrode to the second emitter is longer than a distance from the implanted electrode to the first emitter.

Abstract: A reset method of an photoelectric conversion device at least including a phototransistor having a first collector, a first base, and a first emitter, and a first field-effect transistor having a first source, a first drain, and a first gate, includes: connecting the first base, and one of the first source and the first drain of the first field-effect transistor by having a common region, or a continuous region, without a base electrode; supplying a base reset potential to the other of the first source and the first drain; and overlapping a time in which a first emitter potential is supplied to the first emitter and a time in which a first ON-potential that turns on the first field-effect transistor is supplied to the first gate.

Abstract: A latch device for vehicle LA provided on a door D of a vehicle, including: a latch 20, which meshes with a striker S; a ratchet 30, which regulates rotation of the latch 20; a detecting sensor 200 including a body 201 and terminals 202a and 202b exposed from the body 201, which detects operation of the latch 20 or the ratchet 30; and a main body 40 in which the detecting sensor 200 is arranged, wherein the main body 40 includes a discharging portion 417 formed on a position corresponding to the terminals 202a and 202b of the latch detecting sensor 200, and the terminals 202a and 202b of the detecting sensor 200 are arranged on an upper side of a vehicle than the discharging portion 417 in a state in which the door D is closed.

Abstract: A mark information recording apparatus includes an output unit and a recording unit. The output unit is configured to output, for displaying a partial image being a part of an entire image having an arbitrary resolution among entire images generated at a plurality of different resolutions with respect to a single target, the partial image. The recording unit is configured to associate mark information with information on a position within the entire image and information on the resolution of the output partial image and record the mark information.

Abstract: An imaging device includes a photoelectric conversion element which photoelectrically converts incident light and generates a charge, accumulates and amplifies the charge, and outputs a photocurrent, wherein a level of an output signal when a charge which is accumulated in the photoelectric conversion element is outputted over a saturated amount of accumulable charge includes a level of an output signal of a charge of a photocurrent of DC component which is generated in the photoelectric conversion element and outputted during a readout time when the charge which is accumulated in the photoelectric conversion element is outputted.

Abstract: An information processing apparatus is provided comprising a processor; and a memory device storing instructions. When executed by the processor, the instructions cause the processor to generate scene information to reproduce display of at least one selected area of a pathological image; and receive order information corresponding to the scene information based on a user input. In another embodiment, the instructions cause the processor to receive scene information to display at least one selected area of a pathological image and order information corresponding to an order of the scene information; and control display of the at least one selected area of the pathological image in the order based on the scene information and the order information.