Abstract: A method for recovering a metal that uses a reduced amount of a chelating agent is described, where the method includes a complex forming step of forming, in a mixture, a complex between a metal in a sample and a chelating agent; a complex depositing step of depositing the complex in the mixture; and a metal recovering step of recovering the deposited complex from the mixture, thereby recovering the metal in the sample.

Abstract: A heat-conductive sheet includes a laminated sheet and first and insulating sheets bonded to first and second main surfaces of the laminated sheet. The laminated sheet includes graphite sheets and one or more adhesive layers disposed alternately on the graphite sheets to bonds the graphite sheets to each other. The first insulating sheet is bonded to the second insulating sheet outside an outer circumferential edge of the laminated sheet to seal the laminated sheet between the first and second insulating sheets. The laminated sheet includes an outer circumferential portion connected to the outer circumferential edge and an inner portion apart from the outer circumferential edge. The outer circumferential portion of the laminated sheet has a thickness smaller than a thickness of the inner portion. The heat-conductive sheet has high reliability of sealing the insulating sheet.

Abstract: The resin solid acid is a sulfo group-modified resin obtained by introducing sulfo groups into a raw material resin in an uncarbonized state, the yield of the sulfo group-modified resin based on the weight of the uncarbonized raw material resin is 80% or more, the amount of sulfo groups in the sulfo group-modified resin is 1 mmol/g or more, and the raw material resin is in the form of a powder, granules or fibers. In addition, the method for producing the resin solid acid is a production method for obtaining a sulfo group-modified resin by comprising a step for adding a sulfonating agent in the form of any of sulfuric acid, fuming sulfuric acid or chlorosulfonic acid to a raw material resin in an uncarbonized state, and a step for heating the uncarbonized raw material resin at 200° C. or lower.

Abstract: A method of production of a shaped solid acid which uses a wood starting material to keep down the prime costs, heat treats the synthetic resin binder itself together with the wood starting material to avoid deterioration of the catalyst performance due to coverage by the binder, and thereby realizes a high degree of freedom of design of shape and further a suitable hardness is provided. The method of production of a synthetic resin binder-shaped solid acid comprises a starting material kneading step (S10) of kneading a wood starting material powder M and synthetic resin binder B to obtain a wood starting material mixture, a shaping step (S20) of shaping the wood starting material mixture into predetermined shapes to obtain starting material shapes, a heat treatment step (S30) of heat treating said starting material shapes in an inert atmosphere to obtain heat treated shapes, and a sulfonating step (S40) of introducing sulfo groups into the heat treated shapes to obtain a shaped solid acid.

Abstract: A thermal insulation sheet includes a heat storage sheet, an insulation sheet affixed to the heat storage sheet, and a highly-thermoconductive sheet affixed to the insulation sheet. The heat storage sheet contains a resin and powdery microcapsules mixed with the resin. The powdery microcapsules encapsulate latent-heat storage agent. The heat storage sheet has a void ratio not less than 10% and not more than 30%. Or, the heat storage sheet may have surface roughness Ra not less than 2 ?m and not more than 20 ?m. The thermal insulation sheet suppresses or retards transferring of heat generated in a heat-generating component to outside, and suppresses a rapid rising of a temperature of the heat-generating component.

Abstract: A heat-insulating sheet includes a heat storage sheet, a first insulating sheet, and a thermally conductive sheet. The heat storage sheet contains a first resin and a plurality of microcapsules containing latent heat storage material and mixed in the form of aggregates with each other. The first insulating sheet has a first face bonded to the heat storage sheet and a second face opposite to the first face. The thermally conductive sheet is bonded to the second face of the first insulating sheet. The content of the microcapsules in the heat storage sheet is falls within a range from 40 wt % to 90 wt %, inclusive. The heat storage sheet includes a layer free from the microcapsules at a portion in contact with the first insulating sheet.

Abstract: A method for recovering a metal that uses a reduced amount of a chelating agent is described, where the method includes a complex forming step of forming, in a mixture, a complex between a metal in a sample and a chelating agent; a complex depositing step of depositing the complex in the mixture; and a metal recovering step of recovering the deposited complex from the mixture, thereby recovering the metal in the sample.

Abstract: A probe needle is successively moved to a plurality of measurement points set in a measurement region on a sample so as to measure a z-displacement amount. An excitation control unit feedback-controls a piezoelectric element so that a vibration amplitude of a cantilever is constant in accordance with the detection output by a displacement detection unit. Moreover, a vertical displacement control unit feedback-controls a vertical position scan unit so as to obtain a constant distance between the probe needle and the sample according to a frequency shift by a frequency detection unit. When changes of outputs of two feedback loops at a certain measurement point are both within a predetermined range, a main control unit issues an instruction to a horizontal position control unit to rapidly move to the next measurement point. As a result, it is possible to adaptively decide such a measurement time that both of the two feedback controls at respective measurement points are established.

Abstract: Above a sample (9) having magnetic domains, a distribution of magnetic force in a measurement plane (91) is obtained as a magnetic force image using a MFM, an auxiliary magnetic force image is obtained by performing measurement in a measurement plane (92) away from the measurement plane (91) by a distance d, and a difference between them is divided by the distance d to obtain a magnetic force gradient image. The magnetic force image and the auxiliary magnetic force image are Fourier transformed and substituted into a three-dimensional field obtaining equation derived from a general solution of the Laplace equation, and the three-dimensional field indicating the magnetic force is obtained. A state of the magnetic domains at the surface (93) of the sample (9) can be obtained with high accuracy by obtaining the three-dimensional field.

Abstract: A surge absorbing element has a first electrode, a second electrode, and a ceramic layer. The second electrode is opposed to the first electrode. The ceramic layer has a polycrystal structure including a plurality of crystal grains showing voltage nonlinearity, and is at least partially brought into contact with the first electrode and the second electrode. The ceramic layer has a void inside therein, and surface discharge is generated on surfaces, exposed to the void, of the crystal grains, whereby electric conduction is attained between the first and second electrodes.

Abstract: Incident light 19 emitted from a laser light source 18 is reflected on an upper surface of a cantilever 13, so that reflected light 19a enters light detection means 20. Since the incident light 19 and the reflected light 19a are in a plane not including a long axis of the cantilever 13, movements of the reflected light 19a due to change in a deflection amount ? of the cantilever 13 and due to change in a fine vertical movement amount z thereof are different in direction on the light detection means 20. This enables the change in the deflection amount ? of the cantilever 13 and the change in the fine vertical movement amount z thereof to be separated from output of the light detection means 20.

Abstract: A surge absorbing element has a first electrode, a second electrode, and a ceramic layer. The second electrode is opposed to the first electrode. The ceramic layer has a polycrystal structure including a plurality of crystal grains showing voltage nonlinearity, and is at least partially brought into contact with the first electrode and the second electrode. The ceramic layer has a void inside therein, and surface discharge is generated on surfaces, exposed to the void, of the crystal grains, whereby electric conduction is attained between the first and second electrodes.

Abstract: A probe needle is successively moved to a plurality of measurement points set in a measurement region on a sample so as to measure a z-displacement amount. An excitation control unit feedback-controls a piezoelectric element so that a vibration amplitude of a cantilever is constant in accordance with the detection output by a displacement detection unit. Moreover, a vertical displacement control unit feedback-controls a vertical position scan unit so as to obtain a constant distance between the probe needle and the sample according to a frequency shift by a frequency detection unit. When changes of outputs of two feedback loops at a certain measurement point are both within a predetermined range, a main control unit issues an instruction to a horizontal position control unit to rapidly move to the next measurement point. As a result, it is possible to adaptively decide such a measurement time that both of the two feedback controls at respective measurement points are established.

Abstract: Incident light 19 emitted from a laser light source 18 is reflected on an upper surface of a cantilever 13, so that reflected light 19a enters light detection means 20. Since the incident light 19 and the reflected light 19a are in a plane not including a long axis of the cantilever 13, movements of the reflected light 19a due to change in a deflection amount ? of the cantilever 13 and due to change in a fine vertical movement amount z thereof are different in direction on the light detection means 20. This enables the change in the deflection amount ? of the cantilever 13 and the change in the fine vertical movement amount z thereof to be separated from output of the light detection means 20.

Abstract: A method for measuring surface properties according to the present invention includes the steps of: with distance control feedback applied so that a desired physical quantity to be measured that is attributed to an interaction between a probe and a sample is actually measured while changing a measured distance between the probe and the sample in accordance with a relationship between the desired physical quantity and the measured distance, (i) setting a set value, corresponding to the desired physical quantity, which serves to change the measured distance; and (ii) recording, for each set value thus set, a relationship between the measured distance changed by the set value set in the step (i) and a physical quantity measured with the probe and the sample placed at that measured distance. This allows precise and quick measurement of a physical quantity even in a region where the probe and the sample are very close to each other, while avoiding a collision between them.

Abstract: An electron beam irradiation device of the present invention includes: a projector 8 for generating a two-dimensional light pattern 13; a microchannel plate 11 for (i) generating an electron beam array based on the light pattern 13 having entered, (ii) amplifying the electron beam array, and (iii) emitting the electron beam array as an amplified electron beam array 14; and an electron beam lens section 12 for converging the amplified electron beam array 14. This electron beam irradiation device is capable of manufacturing a semiconductor device whose performance is improved through a finer processing by means of irradiation using an electron beam. Further, the electron beam irradiation device allows cost reduction, because the device allows collective irradiation using a two dimensional pattern.

Abstract: Above the sample (9) having magnetic domains, a distribution of magnetic force in a measurement plane (91) is obtained as a magnetic force image with use of a MFM, an auxiliary magnetic force image is obtained by performing measurement in a measurement plane (92) away from the measurement plane (91) by a minute distance d, and a difference between them is divided by the minute distance d to obtain a magnetic force gradient image. The magnetic force image and the auxiliary magnetic force image are Fourier transformed and substituted into a three-dimensional field obtaining equation derived from a general solution of the Laplace equation, and the three-dimensional field indicating the magnetic force is obtained with high accuracy. A state of the magnetic domains at the surface (93) of the sample (9) can be obtained with high accuracy by obtaining the three-dimensional field.

Abstract: An object is to provide a gate valve capable of preventing operational deficiencies caused by particulate materials accumulating in a valve box, thus providing superior sealing properties and high durability, having a simple structure, and allowing inspection and maintenance to be performed easily.

Abstract: An object is to provide a gate valve capable of preventing operational deficiencies caused by particulate materials accumulating in a valve box, thus providing superior sealing properties and high durability, having a simple structure, and allowing inspection and maintenance to be performed easily.

Abstract: An electron beam irradiation device of the present invention includes: a projector 8 for generating a two-dimensional light pattern 13; a microchannel plate 11 for (i) generating an electron beam array based on the light pattern 13 having entered, (ii) amplifying the electron beam array, and (iii) emitting the electron beam array as an amplified electron beam array 14; and an electron beam lens section 12 for converging the amplified electron beam array 14. This electron beam irradiation device is capable of manufacturing a semiconductor device whose performance is improved through a finer processing by means of irradiation using an electron beam. Further, the electron beam irradiation device allows cost reduction, because the device allows collective irradiation using a two dimensional pattern.