Patents by Inventor Hirohide Yamaguchi

Hirohide Yamaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6723382
    Abstract: A method for fabricating a CMC (Ceramic Matrix Composite) article, comprising: performing a CVI (Chemical Vapor Infiltration) treatment for forming a SiC matrix layer on the surface of a woven fabric; performing a machining process, after the CVI treatment, for machining the woven fabric; and performing a PIP (Polymer Impregnation and Pyrolysis) treatment, after the machining process, for impregnating an organic silicon polymer as a base material into voids in the matrix layer and pyrolyzing the organic silicon polymer. By this method, the throughput of CMC articles can be preferably increased. The throughput may be further increased by performing a slurry impregnation treatment before or after the PIP treatment, in which slurried SiC is impregnated into the voids in the matrix layer.
    Type: Grant
    Filed: April 8, 2002
    Date of Patent: April 20, 2004
    Assignee: Ishikawajima-Harima Heavy Industries Co., Ltd.
    Inventors: Hirohide Yamaguchi, Takeshi Nakamura, Hiroshige Murata
  • Publication number: 20030008067
    Abstract: A method for fabricating a CMC (Ceramic Matrix Composite) article, comprising: performing a CVI (Chemical Vapor Infiltration) treatment for forming a SiC matrix layer on the surface of a woven fabric; performing a machining process, after the CVI treatment, for machining the woven fabric; and performing a PIP (Polymer Impregnation and Pyrolysis) treatment, after the machining process, for impregnating an organic silicon polymer as a base material into voids in the matrix layer and pyrolyzing the organic silicon polymer. By this method, the throughput of CMC articles can be preferably increased. The throughput may be further increased by performing a slurry impregnation treatment before or after the PIP treatment, in which slurried SiC is impregnated into the voids in the matrix layer.
    Type: Application
    Filed: April 8, 2002
    Publication date: January 9, 2003
    Inventors: Hirohide Yamaguchi, Takeshi Nakamura, Hiroshige Murata