Abstract: The invention provides a fluid heater in which the efficiency of heat transfer to a fluid is improved, downsizing of the heater itself can be achieved, and the rise time until warm water heated to a necessary temperature is supplied is shortened, which results in reduction of the power consumption. The heater includes a flat ceramic substrate (1) and a heating element formed on one surface of or in the interior of the ceramic substrate (1). The ceramic substrate (1) is made of A1N, etc. or silicon nitride, whose thermal conductivity is 50W/m·K or more. A zigzag water channel is formed by walls 6, etc., on the fluid-heating surface of the ceramic substrate (1). A plurality of fins 5 are fixed in the water channel. A heat insulating material 8 can be mounted so as to cover a surface excluding the fluid-heating surface of the ceramic substrate (1).

Abstract: A wafer holder is provided with a mounting stage having a mounting surface for mounting a wafer, and a holding member for holding the mounting stage, wherein relationships are established such that K1>K2 and Y1<Y2, where K1 is the thermal conductivity of the mounting stage, Y1 is the Young's modulus of the mounting stage, K2 is the thermal conductivity of the holding member, and Y2 is the Young's modulus of the holding member. The wafer holder preferably comprises a supporting member on the lower part of the holding member, wherein a relationship is establish such that K2>K3, where K3 is the thermal conductivity of the holding member.

Abstract: Affords a holder for use in semiconductor or liquid-crystal manufacturing devices—as well as semiconductor or liquid-crystal manufacturing devices in which the holder is installed—in which temperature uniformity in the processed-object retaining face is heightened. Configuring the holder with, furnished atop a ceramic susceptor, a composite of a ceramic and a metal improves the temperature uniformity in the holder's processed-object retaining face and makes for curtailing the generation of particulates and other contaminants. In addition, putting a coating on at least the retaining face improves the durability of the holder. Installing a holder of this sort in a semiconductor manufacturing device or a liquid-crystal manufacturing device contributes to making available semiconductor or liquid-crystal manufacturing devices whose productivity and throughput are excellent.

Abstract: A substrate holding structure having excellent corrosion resistance and airtightness, excellent dimensional accuracy and sufficient durability when mechanical or thermal stress is applied thereto is obtained. A holder (1) serving as the substrate holding structure includes a ceramic base (2) for holding a substrate, a protective cylinder (7) joined to the ceramic base (2) and a joining layer (8) positioned therebetween for joining the ceramic base (2) and the protective cylinder (7) to each other. The joining layer (8) contains at least 2 mass % and not more than 70 mass % of a rare earth oxide, at least 10 mass % and not more than 78 mass % of aluminum oxide, and at least 2 mass % and not more than 50 mass % of aluminum nitride. The rare earth oxide or the aluminum oxide has the largest proportional content among the aforementioned three types of components in the joining layer (8).

Abstract: A wafer holder less susceptible to deformation even under high load and having high heat-insulating effect and hence capable of improving positional accuracy, improving thermal uniformity and rapid heating and cooling of chips, as well as a heater unit including the wafer holder and a wafer prober including the heater unit are provided. The wafer holder includes a chuck top having a chuck top conductive layer on its surface and a supporter supporting the chuck top, and has a support member in a space between the chuck top and the supporter. Preferably, the support member is arranged concentric with the supporter or approximately at the center of the supporter, and more preferably, support members arranged concentrically and arranged at the center are both provided.

Abstract: Heater module, and semiconductor manufacturing equipment in which the heater module is utilized, for raising the cooling speed of a post-heating heater markedly more than conventional, and that can contribute toward bettering and improving productivity, without accompanying scaling-up of and cost increases in the semiconductor manufacturing equipment. The heater module is furnished with heater part 1a for controlled heating of a wafer placed on its top face, and block part 3a provided to be shiftable relative to said heater part, for varying heat capacity in total with heater part 1a by abutting on or separating from the reverse surface of heater part 1a. By having the heat capacity of block part 3a be 20% or more of the total heat capacity of heater part 1a and block part 3a, the heater cooling speed can be made 10°C./min or more.

Abstract: The present invention provides a composite having superior reliability and superior binding strength with respect to films formed on substrates by aerosol methods, and also provides a semiconductor manufacturing devices susceptor and a power module substrate. In the composite of the present invention, a film formed by an aerosol method is provided on a surface of a composite formed from a plurality of metals. Alternatively, a film formed by an aerosol method may be provided on the surface of a composite formed from a metal and a ceramic. The composite preferably has a thermal conductivity of 100 W/mK or greater, and the film formed by the aerosol method preferably has a thermal conductivity of 1 W/mK or greater.

Abstract: A heater unit that much improves accuracy in thermal uniformity of an object of heating during cooling, particularly rapid cooling, is provided. The heater unit in accordance with the present invention includes a heater substrate for mounting an object of heating and performing heat treatment thereon, and a cooling module for cooling the heater substrate, and between said heater substrate and the cooling module, an intervening body is arranged. Utilizing deformability of the intervening body, ratio of a non-contact portion can be reduced than when the intervening body is not provided, and temperature uniformity of the heater substrate at the time of cooling can be improved.

Abstract: A heater unit that can be fabricated in a simple manner and is highly reliable, as well as a wafer prober mounting the heater unit are provided. The heater unit of the present invention includes a mounting base mounting an object to be processed and a heater unit heating the mounting base, wherein the heater body has an insulating sheet and a heating body formed on the insulating sheet. Preferably, at least a part of the heating body is covered with a protective layer, and preferably, the material of the heating body is metal foil. Further, preferably, the material of the protective layer is heat-resistant rubber, and preferably, the material of the insulating sheet is heat-resistant resin.

Abstract: A ceramic heater attaining more uniform temperature distribution from the start to the end of cooling is provided. Further, in a cooling module used for cooling the heater, liquid leakage during use is prevented, degradation in cooling capability is prevented and the performance is maintained for a long period of use, and the manufacturing cost of the module is decreased. The ceramic heater includes a ceramic heater body and a cooling module cooling the heater body, and the cooling module has a structure formed by arranging a pipe in a trench formed in a plate-shaped structure.

Abstract: A semiconductor heater holder for setting a heater for heating a semiconductor, having an opening, wherein the heat capacity of the semiconductor heater holder is not more than 1.5 times the heat capacity of the heater, and a semiconductor manufacturing apparatus comprising this semiconductor heater holder.

Abstract: A wafer holder for a wafer prober, a heater unit including the same, and a wafer prober including the heater unit are provided in which deformation or breakage of a chuck top can be prevented and proper measurement can be realized even in repeated use. A wafer holder in the present invention includes a chuck top having a chuck top conductive layer on a surface thereof and a support body supporting the chuck top. The chuck top and the support body are fixed to each other by a screw. The difference of thermal expansion coefficient between the screw and the chuck top is 5.0×10?6/K or less.

Abstract: A wafer holding body used for a wafer prober for testing a semiconductor wafer includes a chuck top having a conductive layer on a surface thereof and a support body supporting the chuck top. The support body has a base portion opposing the chuck top and a side portion extending from the perimeter of the base portion to the chuck top to support the chuck top. A cavity portion is formed between the chuck top and the base portion of the support body. A reflection plate is provided in the cavity portion. A heater unit and a wafer prober includes the wafer holding body.

Abstract: A wafer holder that can improve throughput by improving heating rate and thermal uniformity of a prober, as well as a wafer prober having the same are provided. The wafer holder has a chuck top conductive layer on a surface of a chuck top, and a heater body at a portion other than the portion where the chuck top conductive layer is formed, wherein maximum outer diameter l of an area where the heater body exists is smaller than diameter L of the chuck top, and the maximum outer diameter l and thickness t of the chuck top are set such that the thickness t and diameter Wl of a wafer to be inspected satisfy the relation of 1+4t>Wl.

Abstract: A wafer holder and a wafer prober including the same are provided in which the positional accuracy of the wafer holder is very high when the wafer holder is moved to a prescribed position in probing, and the positional accuracy are less likely to vary even with repeated movements. The wafer holder in accordance with the present invention includes a chuck top having a chuck top conductive layer on a surface thereof and a support body supporting the chuck top. The weight of the wafer holder is 28000 g or less. Preferably, the weight of the chuck top is 6000 g or less. Preferably, the weight of the support body is 12000 g or less.

Abstract: A wafer holder is provided in which local heat radiation in supporting and heating wafers is kept under control and temperature uniformity of the wafer retaining surface is enhanced, and by making use of the wafer holder a semiconductor manufacturing apparatus suitable for processing larger-diameter wafers is made available. In a wafer holder (1) including within a ceramic substrate (2) a resistive heating element (3) or the like and being furnished with a lead (4) penetrating a reaction chamber (6), the lead (4) is housed in a tubular guide member (5), and an interval between the guide member (5) and the reaction chamber (6) as well as the interior of the guide member (5) are hermetically sealed. The guide member (5) and the ceramic substrate (2) are not joined together, and in the interior of the guide member (5) in which the inside is hermetically sealed, the atmosphere toward the ceramic substrate (2) is preferably substantially the same as the atmosphere in the reaction chamber (6).

Abstract: The invention provides a fluid heater in which the efficiency of heat transfer to a fluid is improved, downsizing of the heater itself can be achieved, and the rise time until warm water heated to a necessary temperature is supplied is shortened, which results in reduction of the power consumption. The heater includes a flat ceramic substrate (1) and a beating element formed on one surface of or in the interior of the ceramic substrate (1). The ceramic substrate (1) is made of AlN, etc. or silicon nitride, whose thermal conductivity is 50 W/m·K or more. A zigzag water channel is formed by walls 6, etc., on the fluid-heating surface of the ceramic substrate (1). A plurality of fins 5 are fixed in the water channel. A heat insulating material 8 can be mounted so as to cover a surface excluding the fluid-heating surface of the ceramic substrate (1).

Abstract: The present invention provides a wafer prober wafer holder that is highly rigid and increases the heat insulating effect, thereby improving positional accuracy, thermal uniformity, and chip temperature ramp-up and cooling rates, as well as a wafer prober device equipped therewith. A wafer holder of the present invention includes a chuck top that mounts a wafer, and a support member that supports the chuck top. A cavity is formed between the chuck top and the support member, and a vacuum space member is provided to the lowest part of a member that is attached to a surface of the chuck top on the side opposite the wafer mounting surface.

Abstract: A wafer holding body for placing a semiconductor wafer, a method of manufacturing the same, and an device using the wafer holding body are provided, wherein a channel is formed in the wafer holding body.

Abstract: A chuck top allowing reliable recognition of a wafer mounted on a wafer-mounting surface or on a chuck top conductive layer by a camera such as a CCD and hence allowing wafer inspection without problem is provided. The chuck top is used for a wafer prober mounting a wafer on the wafer-mounting surface for inspection, in which reflectance of a portion other than the portion for mounting the wafer of the wafer-mounting surface or the chuck top conductive layer is smaller than the reflectance of a peripheral end portion of the wafer to be inspected. The portion other than the portion for mounting the wafer of the wafer-mounting surface or the chuck top conductive layer of chuck top preferably has surface roughness Ra of at least 0.0001 ?m and at most 0.05 ?m.