Patents by Inventor Hirohiko Saito

Hirohiko Saito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200303337
    Abstract: A lead-free solder has a heat resistance temperature which is high and a thermal conductive property which is not changed in a high temperature range. A semiconductor device includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities. A bonding layer including the solder material, is formed between a semiconductor element and a substrate electrode or a lead frame.
    Type: Application
    Filed: June 5, 2020
    Publication date: September 24, 2020
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Hirohiko WATANABE, Shunsuke SAITO, Yoshitaka NISHIMURA, Fumihiko MOMOSE
  • Patent number: 10727194
    Abstract: To provide a lead-free solder the heat resistance temperature of which is high and thermal conductive property of which are not changed in a high temperature range. A semiconductor device of the present invention includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities, and a bonding layer including the solder material, which is formed between a semiconductor element and a substrate electrode or a lead frame.
    Type: Grant
    Filed: August 28, 2017
    Date of Patent: July 28, 2020
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Hirohiko Watanabe, Shunsuke Saito, Yoshitaka Nishimura, Fumihiko Momose
  • Patent number: 10662321
    Abstract: The cyclic olefin copolymer composition of the present invention includes a cyclic olefin copolymer (m) including a specific amount of a specific repeating unit and a cyclic olefin copolymer (n) different from the cyclic olefin copolymer (m). The cyclic olefin copolymer (n) includes at least one type selected from a copolymer (n1) of ethylene or ?-olefin and cyclic olefin (where the copolymer (n1) does not include a repeating unit derived from specific cyclic non-conjugated dienes) and a cyclic olefin ring-opening polymer (n2), and when a total amount of the cyclic olefin copolymer (m) and the cyclic olefin copolymer (n) is 100% by mass, a content of the cyclic olefin copolymer (m) is 5% by mass or more to 95% by mass or less, and a content of the cyclic olefin copolymer (n) is 5% by mass or more to 95% by mass or less.
    Type: Grant
    Filed: February 17, 2017
    Date of Patent: May 26, 2020
    Assignee: MITSUI CHEMICALS, INC.
    Inventors: Junji Saito, Shigeo Kiba, Hirohiko Murase, Haruka Saito, Tomoaki Matsugi
  • Patent number: 10504868
    Abstract: The present invention suppresses fracture at an interface between different materials, and provides a solder joining which includes: a solder joining layer 10 having a melted solder material, containing Sb at more than 5.0% by mass and 10.0% by mass or less, Ag at 2.0 to 4.0% by mass, Ni at more than 0 and 1.0% by mass or less, and a balance made up of Sn and inevitable impurities; and joining members 11 and 123 at least one of which is a Cu or Cu-alloy member 123, in which the solder joining layer includes a first structure 1 containing (Cu, Ni)6(Sn, Sb)5 and a second structure 2 containing (Ni, Cu)3(Sn, Sb)X (in the formula, X is 1, 2, or 4) at an interface with the Cu or Cu-alloy member 123, and an electronic device and a semiconductor device including the solder joining.
    Type: Grant
    Filed: May 31, 2018
    Date of Patent: December 10, 2019
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Hirohiko Watanabe, Shunsuke Saito, Yoshihiro Kodaira
  • Publication number: 20190193210
    Abstract: A solder material having a good thermal-cycle fatigue property and wettability. The solder material contains not less than 5.0% by mass and not more than 8.0% by mass Sb, not less than 3.0% by mass and not more than 5.0% by mass Ag, and the balance of Sn and incidental impurities. Also, a semiconductor device may include a joining layer between a semiconductor element and a substrate electrode or a lead frame, the joining layer being obtained by melting this solder material.
    Type: Application
    Filed: March 1, 2019
    Publication date: June 27, 2019
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Hirohiko WATANABE, Shunsuke Saito, Yoshihiro Kodaira
  • Patent number: 6589582
    Abstract: Baked, fried or steamed goods or foodstuffs exerting wheat flour's specific flavor and taste and having a unique flavor can be made characteristically through a process comprising a first step of preparing first a basic dough by mixing wheat flour and water and kneading the mixture under heating to give a basic dough having a temperature of around 55 to 98° C., an additional step of preparing a finished dough by mixing the basic dough, wheat flour and auxiliary materials containing yeast and subsequently kneading the mixture, and a last step of subjecting the finished dough to fermentation and subsequently baking, frying or steaming the fermented dough into baked, fried or steamed goods or foodstuffs.
    Type: Grant
    Filed: June 25, 2001
    Date of Patent: July 8, 2003
    Assignee: Okumoto Flour Milling Co., Ltd.
    Inventors: Hirohiko Saito, Norihiro Kanaya, Etsuko Homma, Shuichi Murata
  • Publication number: 20020031575
    Abstract: Baked, fried or steamed goods or foodstuffs exerting wheat flour's specific flavor and taste and having a unique flavor can be made characteristically through a process comprising a first step of preparing first a basic dough by mixing wheat flour and water and kneading the mixture under heating to give a basic dough having a temperature of around 55 to 98° C., an additional step of preparing a finished dough by mixing the basic dough, wheat flour and auxiliary materials containing yeast and subsequently kneading the mixture, and a last step of subjecting the finished dough to fermentation and subsequently baking, frying or steaming the fermented dough into baked, fried or steamed goods or foodstuffs.
    Type: Application
    Filed: June 25, 2001
    Publication date: March 14, 2002
    Inventors: Hirohiko Saito, Norihiro Kanaya, Etsuko Homma
  • Patent number: 5972539
    Abstract: A flame retardant solid electrolyte comprising an ion conductive polymer matrix having moieties capable of imparting flame retardance to the polymer matrix and ether bonds in the molecule and an electrolyte salt dispersed in the polymer matrix. The flame retardant solid electrolyte may be one which comprises a non-ion-conductive polymer matrix and a liquid electrolyte consisting of an electrolyte salt dissolved in a solvent therefor, which is dispersed in the polymer matrix. The flame retardance-imparting moieties are derived from halogen or phosphorus-bearing compounds.
    Type: Grant
    Filed: August 18, 1997
    Date of Patent: October 26, 1999
    Assignees: Denso Corporation, Dai-Ichi Kogyo Seiyaku Co., Ltd.
    Inventors: Jun Hasegawa, Hiromochi Muramatsu, Hirohiko Saito, Michiyuki Kono, Hirohito Komori
  • Patent number: 5494762
    Abstract: In order to improve the charge-discharge energy density of a lithium secondary cell with a nonaqueous electrolyte having such a construction that a metallic compound capable of occluding or releasing lithium is used as an electrode active material, lithium or a lithium alloy is used as a negative electrode material and a solution of a lithium salt is used as an electrolyte, the microstructure of the metallic compound is rendered acicular. Further, a lithium-containing metallic compound grown into such a columnar form that has the angle .THETA. to the normal of the surface of the substrate of 0.degree..ltoreq..THETA.<90.degree. is used as the electrode active material.
    Type: Grant
    Filed: February 9, 1995
    Date of Patent: February 27, 1996
    Assignee: Nippondenso Co., Ltd.
    Inventors: Hirofumi Isoyama, Satoru Suzuki, Jun Hasegawa, Hirohiko Saito, Hisano Kojima
  • Patent number: 4962411
    Abstract: A semiconductor device with a current detecting function in which in place of an external resistor for detecting an operation current such as drain current or collector current of a device such as an FET or bipolar transistor, a probe electrode is formed in proximity to the device depletion layer to connect therethrough with the device channel to generate a probe voltage corresponding to the operation current.
    Type: Grant
    Filed: February 3, 1989
    Date of Patent: October 9, 1990
    Assignee: Nippondenso Co., Ltd.
    Inventors: Norihito Tokura, Hironari Kuno, Hiroyasu Ito, Hirohiko Saito, Kunihiko Hara