Abstract: In an example, use of a solder joint may include a solder joint layer having a melted solder material containing Sn as a main component and further containing Ag and/or Sb and/or Cu; and a joined body including a Ni—P—Cu plating layer on a surface of the joined body in contact with the solder joint layer. The Ni—P—Cu plating layer may contain Ni as a main component and may contain 0.5% by mass or greater and 8% by mass or less of Cu and 3% by mass or greater and 10% by mass or less of P, and the Ni—P—Cu plating layer may have a microcrystalline layer at an interface with the solder joint layer.

Abstract: A solder material having a good thermal-cycle fatigue property and wettability. The solder material contains not less than 6.0% by mass and not more than 8.0% by mass Sb, not less than 3.0% by mass and not more than 5.0% by mass Ag, and the balance of Sn and incidental impurities. Also, a semiconductor device may include a joining layer between a semiconductor element and a substrate electrode or a lead frame, the joining layer being obtained by melting this solder material.

Abstract: The present invention provides a highly reliable solder joint, the solder joint including a solder joint layer having a melted solder material containing Sn as a main component and further containing Ag and/or Sb and/or Cu; and a joined body including a Ni—P—Cu plating layer on a surface in contact with the solder joint layer, wherein the Ni—P—Cu plating layer contains Ni as a main component and contains 0.5% by mass or greater and 8% by mass or less of Cu and 3% by mass or greater and 10% by mass or less of P, the Ni—P—Cu plating layer has a microcrystalline layer at an interface with the solder joint layer, and the microcrystalline layer includes a phase containing microcrystals of a NiCuP ternary alloy, a phase containing microcrystals of (Ni,Cu)3P, and a phase containing microcrystals of Ni3P.

Abstract: A solder material having a good thermal-cycle fatigue property and wettability. The solder material contains not less than 5.0% by mass and not more than 8.0% by mass Sb, not less than 3.0% by mass and not more than 5.0% by mass Ag, and the balance of Sn and incidental impurities. Also, a semiconductor device may include a joining layer between a semiconductor element and a substrate electrode or a lead frame, the joining layer being obtained by melting this solder material.

Abstract: A lead-free solder has a heat resistance temperature which is high and a thermal conductive property which is not changed in a high temperature range. A semiconductor device includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, an element selected from the group consisting of: more than 0 and 1.0% by mass or less of Si, more than 0 and 0.1% by mass or less of V, 0.001 to 0.1% by mass of Ge, 0.001 to 0.1% by mass of P, and more than 0 and 1.2% by mass or less of Cu, and the remainder consisting of Sn and inevitable impurities. A bonding layer including the solder material, is formed between a semiconductor element and a substrate electrode or a lead frame.

Abstract: A lead-free solder has a heat resistance temperature which is high and a thermal conductive property which is not changed in a high temperature range. A semiconductor device includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities. A bonding layer including the solder material, is formed between a semiconductor element and a substrate electrode or a lead frame.

Abstract: The present invention provides a highly reliable solder joint, the solder joint including a solder joint layer having a melted solder material containing Sn as a main component and further containing Ag and/or Sb and/or Cu; and a joined body including a Ni—P—Cu plating layer on a surface in contact with the solder joint layer, wherein the Ni—P—Cu plating layer contains Ni as a main component and contains 0.5% by mass or greater and 8% by mass or less of Cu and 3% by mass or greater and 10% by mass or less of P, the Ni—P—Cu plating layer has a microcrystalline layer at an interface with the solder joint layer, and the microcrystalline layer includes a phase containing microcrystals of a NiCuP ternary alloy, a phase containing microcrystals of (Ni,Cu)3P, and a phase containing microcrystals of Ni3P.

Abstract: A lead-free solder has a heat resistance temperature which is high and a thermal conductive property which is not changed in a high temperature range. A semiconductor device includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities. A bonding layer including the solder material, is formed between a semiconductor element and a substrate electrode or a lead frame.

Abstract: To provide a lead-free solder the heat resistance temperature of which is high and thermal conductive property of which are not changed in a high temperature range. A semiconductor device of the present invention includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities, and a bonding layer including the solder material, which is formed between a semiconductor element and a substrate electrode or a lead frame.

Abstract: The present invention suppresses fracture at an interface between different materials, and provides a solder joining which includes: a solder joining layer 10 having a melted solder material, containing Sb at more than 5.0% by mass and 10.0% by mass or less, Ag at 2.0 to 4.0% by mass, Ni at more than 0 and 1.0% by mass or less, and a balance made up of Sn and inevitable impurities; and joining members 11 and 123 at least one of which is a Cu or Cu-alloy member 123, in which the solder joining layer includes a first structure 1 containing (Cu, Ni)6(Sn, Sb)5 and a second structure 2 containing (Ni, Cu)3(Sn, Sb)X (in the formula, X is 1, 2, or 4) at an interface with the Cu or Cu-alloy member 123, and an electronic device and a semiconductor device including the solder joining.

Abstract: A solder material having a good thermal-cycle fatigue property and wettability. The solder material contains not less than 5.0% by mass and not more than 8.0% by mass Sb, not less than 3.0% by mass and not more than 5.0% by mass Ag, and the balance of Sn and incidental impurities. Also, a semiconductor device may include a joining layer between a semiconductor element and a substrate electrode or a lead frame, the joining layer being obtained by melting this solder material.

Abstract: An object of the invention is to provide a lead-free solder for die bonding having a high heat resistance temperature and an improved wetting property. Provided are a solder alloy for die bonding which contains 0.05% by mass to 3.0% by mass of antimony and the remainder consisting of bismuth and inevitable impurities, and a solder alloy for die bonding which contains 0.01% by mass to 2.0% by mass of germanium and the remainder consisting of bismuth and inevitable impurities.

Abstract: The present invention suppresses fracture at an interface between different materials, and provides a solder joining which includes: a solder joining layer 10 having a melted solder material, containing Sb at more than 5.0% by mass and 10.0% by mass or less, Ag at 2.0 to 4.0% by mass, Ni at more than 0 and 1.0% by mass or less, and a balance made up of Sn and inevitable impurities; and joining members 11 and 123 at least one of which is a Cu or Cu-alloy member 123, in which the solder joining layer includes a first structure 1 containing (Cu, Ni)6(Sn, Sb)5 and a second structure 2 containing (Ni, Cu)3(Sn, Sb)X (in the formula, X is 1, 2, or 4) at an interface with the Cu or Cu-alloy member 123, and an electronic device and a semiconductor device including the solder joining.

Abstract: In a soldering method for Ag-containing lead-free solders to be soldered to an Ag-containing member, void generation is prevented and solder wettability is improved. The soldering method for Ag-containing lead-free solders of the present invention is a soldering method for Ag-containing lead-free solders includes a first step of bringing a lead-free solder having a composition that contains Ag that a relation between a concentration C (mass %) of Ag contained in an Sn—Ag-based lead-free solder before soldering of a mass M(g) and an elution amount B(g) of Ag contained in the Ag-containing member becomes 1.0 mass %?(M×C+B)×100/(M+B)?4.6 mass % and that the balance consists of Sn and unavoidable impurities into contact with the Ag-containing member, a second step of heating and melting the lead-free solder, and a third step of cooling the lead-free solder.

Abstract: To provide a lead-free solder the heat resistance temperature of which is high and thermal conductive property of which are not changed in a high temperature range. A semiconductor device of the present invention includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities, and a bonding layer including the solder material, which is formed between a semiconductor element and a substrate electrode or a lead frame.

Abstract: In a soldering method for Ag-containing lead-free solders to be soldered to an Ag-containing member, void generation is prevented and solder wettability is improved. The soldering method for Ag-containing lead-free solders of the present invention is a soldering method for Ag-containing lead-free solders includes a first step of bringing a lead-free solder having a composition that contains Ag that a relation between a concentration C (mass %) of Ag contained in an Sn—Ag-based lead-free solder before soldering of a mass M(g) and an elution amount B(g) of Ag contained in the Ag-containing member becomes 1.0 mass %?(M×C+B)×100/(M+B)?4.6 mass % and that the balance consists of Sn and unavoidable impurities into contact with the Ag-containing member, a second step of heating and melting the lead-free solder, and a third step of cooling the lead-free solder.

Abstract: Provided is flux composition for a solder, which thermally cures so as to cover and reinforce a solder ball during solder ball bonding. Employed is a flux for soldering, containing an epoxy resin, an organocarboxylic acid containing at least 0.1-40 mass % of a dicarboxylic acid having molecular weight of 180 or less, and a thixotropy-imparting agent, the epoxy resin and the organocarboxylic acid being blended such that there is 0.8-2.0 eq of the carboxyl groups of the organocarboxylic acid per 1.0 eq of the epoxy groups of the epoxy resin, and the epoxy resin, the organocarboxylic acid, and the thixotropy-imparting agent being contained in a total amount of 70 mass % or more relative to the total amount of the flux.

Abstract: An object of the invention is to provide a lead-free solder for die bonding having a high heat resistance temperature and an improved wetting property. Provided are a solder alloy for die bonding which contains 0.05% by mass to 3.0% by mass of antimony and the remainder consisting of bismuth and inevitable impurities, and a solder alloy for die bonding which contains 0.01% by mass to 2.0% by mass of germanium and the remainder consisting of bismuth and inevitable impurities.

Abstract: A flux for resin cored solder containing a thermosetting resin is disclosed which is excellent in storage stability and productivity, and a resin cored solder having the flux built in. The flux for resin cored solder comprises a solid-state first flux containing a thermosetting resin, and a solid-state second flux containing a curing agent having redox activity, the first flux and the second flux being present in a non-contact state. A resin cored solder comprises the flux for resin cored solder and a lead-free solder alloy having a melting point ranging from 130° C. to 250° C. The resin cored solder is made up of a first resin cored solder in which the first flux is built into the lead-free solder alloy, and a second resin cored solder in which the second flux is built into the lead-free solder alloy.

Abstract: A heat exchanger includes a heat exchange core including a plurality of heat exchange tubes, a refrigerant inlet header and a refrigerant outlet header arranged toward one end of each heat exchange tube, and a refrigerant inflow header and a refrigerant outflow header arranged toward the other end of each heat exchange tube. The outlet header has an interior divided into two spaces by a flow dividing resistance plate, and some of the heat exchange tubes are joined to the outlet header so as to communicate with the space. The resistance plate has a plurality of refrigerant passing holes formed therein that are different in shape and/or size. The outlet header is provided on the outer surface thereof with identification marks for discriminating the positions of the refrigerant passing holes and representing the shapes and/or sizes of the holes.