Abstract: A switching regulator and a semiconductor device having the same are disclosed, the switching regulator being capable of preventing turn-ON of a switching transistor when the connection between a control circuit controlling the operation of the switching transistor and ground potential is cut off. The switching regulator includes, for example, an NMOS transistor that is turned OFF to decrease the gate voltage of the switching transistor to turn off the switching transistor to be electrically non-conducting when the connection between a first ground terminal and ground potential is cut off by, for example, the disconnection between the first ground terminal and the ground line of the printed circuit board.

Abstract: A gas exchange chip comprises substrates (1,2); two flow channels (3,4) formed in the substrates (1,2) and each having an inlet port and an outlet port; and multiple grooves (9) interlinking the flow channels (3,4). The grooves (9) have the size of their sectional area predetermined and have at least a part of the internal surface thereof rendered hydrophobic so as to permit the transfer of gas component while inhibiting any liquid passage. A sample water containing carbon dioxide is caused to flow through one of the flow channels (3) while pure water is caused to flow through the other flow channel (4) to thereby transfer the carbon dioxide contained in the sample water into the pure water.

Abstract: A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength ? permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1? to 3? on the side surfaces.

Abstract: To provide a method for analyzing a nucleic acid according to high throughput microcapillary electrophoresis during microchip electrophoresis under non-steady electric field, the method being capable of detecting polymorphism of a large number of genes at a high speed. The present invention is useful for the diagnosis and treatment of diseases such as detection of gene diseases and application to Taylor-made therapy.

Abstract: A differential amplifying apparatus includes first and second differential transistor pairs of different polarities operated by different constant currents, and first to sixth current mirror circuits. The second, third, fifth, and sixth current mirror circuits are connected to an output terminal. The first, second, and sixth current mirror circuits receive a first power supply voltage, and the third, fourth, and fifth current mirror circuits receive a second power supply voltage. The first and second current mirror circuits respectively output mirror currents based on respective corresponding currents flowing through the first differential transistor pair. The third current mirror circuit outputs a current input from the first current mirror circuit. The fourth and fifth current mirror circuits respectively output mirror currents based on respective corresponding currents flowing through the second differential transistor pair.

Abstract: A direct current power supply apparatus includes a first power supply circuit and a second power supply circuit. The first power supply circuit converts a source voltage from an externally supplied direct current power source into a first voltage and provides the first voltage to an output terminal. The second power supply circuit converts the source voltage from the externally supplied direct current power source into a second voltage and provides the second voltage to the output terminal. The second power supply circuit is controlled to be turned on and off. The first power supply circuit detects voltage at the output terminal and, when the second voltage is not being provided because the second power supply circuit is inactivated, provides the first voltage.

Abstract: There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.

Abstract: A differential amplifying apparatus includes first and second differential transistor pairs of different polarities operated by different constant currents, and first to sixth current mirror circuits. The second, third, fifth, and sixth current mirror circuits are connected to an output terminal. The first, second, and sixth current mirror circuits receive a first power supply voltage, and the third, fourth, and fifth current mirror circuits receive a second power supply voltage. The first and second current mirror circuits respectively output mirror currents based on respective corresponding currents flowing through the first differential transistor pair. The third current mirror circuit outputs a current input from the first current mirror circuit. The fourth and fifth current mirror circuits respectively output mirror currents based on respective corresponding currents flowing through the second differential transistor pair.

Abstract: A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength ? permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1? to 3? on the side surfaces.

Abstract: A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength ? permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1 ? to 3 ? on the side surfaces.

Abstract: There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.

Abstract: There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.

Abstract: A direct current power supply apparatus includes a first power supply circuit and a second power supply circuit. The first power supply circuit converts a source voltage from an externally supplied direct current power source into a first voltage and provides the first voltage to an output terminal. The second power supply circuit converts the source voltage from the externally supplied direct current power source into a second voltage and provides the second voltage to the output terminal. The second power supply circuit is controlled to be turned on and off. The first power supply circuit detects voltage at the output terminal and, when the second voltage is not being provided because the second power supply circuit is inactivated, provides the first voltage.

Abstract: To provide a method for analyzing a nucleic acid according to high throughput microcapillary electrophoresis during microchip electrophoresis under non-steady electric field, the method being capable of detecting polymorphism of a large number of genes at a high speed. The present invention is useful for the diagnosis and treatment of diseases such as detection of gene diseases and application to Taylor-made therapy.

Abstract: A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength &lgr; permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1 &lgr; to 3 &lgr; on the side surfaces.

Abstract: The present invention is related to a composite flash memory device comprises a plural sector flash memory array which is divided to plural sector that is a minimum erasing unit of the flash memory device, a flash memory array storing control commands which control a total system of the composite flash memory device and/or the only composite flash memory device in and sharing I/O line of the plural sector flash memory array, the read operation of the flash memory array is enable when the plural sector flash memory array is gained access.

Abstract: There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.

Abstract: There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.

Abstract: The present invention is related to a composite flash memory device comprises a plural sector flash memory array which is divided to plural sector that is a minimum erasing unit of the flash memory device, a flash memory array storing control commands which control a total system of the composite flash memory device and/or the only composite flash memory device in and sharing I/O line of the plural sector flash memory array, the read operation of the flash memory array is enable when the plural sector flash memory array is gained access.

Abstract: The present invention is related to a composite flash memory device comprises a plural sector flash memory array which is divided to plural sector that is a minimum erasing unit of the flash memory device, a flash memory array storing control commands which control a total system of the composite flash memory device and/or the only composite flash memory device in and sharing I/O line of the plural sector flash memory array, the read operation of the flash memory array is enable when the plural sector flash memory array is gained access.