Abstract: There is provided a method for processing an inner wall surface of a micro vacancy, capable of reliably etching and cleaning even if the hole provided to the substrate to be processed is narrow and deep. The substrate has a surface on which a processing solution is to be applied and a micro vacancy with an opening on the surface. An aspect ratio (l/r) of the micro vacancy being at least 5, or the aspect ratio being less than 5 and a ratio (V/S) of a micro vacancy volume (V) to a surface area of the opening (S) being at least 3. The substrate is arranged in a processing space. Next, the processing space is depressurized, and subsequently the processing solution is introduced into the processing space so as to process the inner wall surface of the micro vacancy.

Abstract: A production method of high purity silver tetrafluoroborate, capable of producing silver tetrafluoroborate (AgBF4) at purity higher than the conventional, without using an organic solvent. The production method of the present invention is characterized in that the method comprises the step of: reacting silver fluoride with boron trifluoride in the presence of anhydrous hydrofluoric acid. Boron trifluoride is delivered into a solution obtained by dissolving or suspending silver fluoride in an anhydrous hydrofluoric acid solution.

Abstract: Provided is an apparatus capable of producing a fluoride crystal in a very short period of time, and a method suitable for producing a fluoride crystal using the apparatus. The apparatus comprises a chamber, a window material, and the like, and is modified such that it can evacuate air from the chamber to provide a high degree vacuum there. The apparatus further includes a crucible, which has a perforation at its bottom. The capillary portion of the perforation is adjusted to facilitate the contact of a seed crystal with a melt. By using the apparatus it is possible to stably produce high quality single crystals of fluorides in a short period of time.

Abstract: A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NH4F), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution can advantageously be adjusted to maximize the etching rate.

Abstract: Provided is an apparatus capable of producing a fluoride crystal in a very short period of time, and a method suitable for producing a fluoride crystal using the apparatus. The apparatus comprises a chamber, a window material, and the like, and is modified such that it can evacuate air from the chamber to provide a high degree vacuum there. The apparatus further includes a crucible, which has a perforation at its bottom. The capillary portion of the perforation is adjusted to facilitate the contact of a seed crystal with a melt. By using the apparatus it is possible to stably produce high quality single crystals of fluorides in a short period of time.

Abstract: A carbon nanotube aggregate and a method for forming a carbon nanotube aggregate are provided. The carbon nanotube aggregate can be formed by treating carbon nanotubes with fluorine gas and sintering the resulting fluorinated carbon nanotubes. A carbon nanotube aggregate can be formed which does not contain a binder or resin matrix.

Abstract: A fine treatment agent according to the present invention is a fine treatment agent for the fine treatment of a multilayer film, including a tungsten film and a silicon oxide film comprising at least one from among hydrogen fluoride, nitric acid, ammonium fluoride and ammonium chloride. Thus, a fine treatment agent which makes fine treatment on a multilayer film, including a tungsten film and a silicon oxide film, possible by controlling the etching rate and a fine treatment method using the same can be provided.

Abstract: A surface treatment solution for finely processing a glass substrate containing multiple ingredients like the one used for the construction of a liquid crystal-based or organic electroluminescence-based flat panel display device, without evoking crystal precipitation and surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution is adjusted.

Abstract: A production method of high purity silver tetrafluoroborate, capable of producing silver tetrafluoroborate (AgBF4) at purity higher than the conventional, without using an organic solvent. The production method of the present invention is characterized in that the method comprises the step of: reacting silver fluoride with boron trifluoride in the presence of anhydrous hydrofluoric acid. Boron trifluoride is delivered into a solution obtained by dissolving or suspending silver fluoride in an anhydrous hydrofluoric acid solution.

Abstract: A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NH4F), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution can advantageously be adjusted to maximize the etching rate.

Abstract: A scintillator, characterized in that it comprises crystals of Pr1-xCexF3 [wherein 0<x<0.5]. It emits a light in ultraviolet and visible regions when it is irradiated with a light or a radiation. The scintillator uses a material which exhibits improved performance with respect to the strength in light emission and to the speed in attenuation, and further is relatively easy in the growth of its crystal.

Abstract: It is aimed at providing a fluoride crystal growing method capable of controlling a shape of the crystal by a micro-pulling-down method. Fluoride crystals in shapes depending on purposes, respectively, can be grown by adopting carbon, platinum, and iridium as crucible materials adaptable to fluorides, respectively, and by designing shapes of the crucibles taking account of wettabilities of the materials with the fluorides, respectively.

Abstract: A fine treatment agent according to the present invention is a fine treatment agent for the fine treatment of a multilayer film, including a tungsten film and a silicon oxide film comprising at least one from among hydrogen fluoride, nitric acid, ammonium fluoride and ammonium chloride. Thus, a fine treatment agent which makes fine treatment on a multilayer film, including a tungsten film and a silicon oxide film, possible by controlling the etching rate and a fine treatment method using the same can be provided.

Abstract: Disclosed is a process liquid which causes only little dissolution of atoms from a semiconductor surface and enables to form a clean and flat semiconductor surface. Also disclosed are a processing method and an apparatus for manufacturing a semiconductor. Specifically disclosed is a process liquid-which causes only little dissolution of atoms from a semiconductor surface by using an aqueous solution containing at least one alcohol or ketone, thereby realizing a clean and flat surface.

Abstract: A surface treatment solution for finely processing a glass substrate containing multiple ingredients like the one used for the construction of a liquid crystal-based or organic electroluminescence-based flat panel display device, without evoking crystal precipitation and surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution is adjusted.

Abstract: Provided is a method for purifying a quaternary alkyl ammonium salt enabling the obtainment of a particulate quaternary alkyl ammonium salt having a low water content at a high yield which is suitably used as an electrolyte in an electrolytic solution. The method for the purification of a quaternary alkyl ammonium salt comprises dispersing a quaternary alkyl ammonium salt to be purified into an organic solvent to allow it to form a suspension there. The alkyl groups constituting the quaternary alkyl ammonium salt have 1 to 5 carbon atoms each. The quaternary alkyl ammonium salt to be purified is dispersed into the organic solvent to make a suspension, and then the particles are washed with an alcohol solvent.

Abstract: Disclosed are a carbon nanotube aggregate and a method for forming a carbon nanotube aggregate. An aggregate can be obtained by fluorinating the surfaces of carbon nanotubes. The method for forming a carbon nanotube aggregate is characterized by comprising a step for firing a plurality of fluorinated carbon nanotubes.

Abstract: The object of the invention is to provide tantalum oxide and/or niobium oxide in the form of hollow particles. Disclosed is a method comprising adding hydrazine or an aqueous solution of hydrazine to (1) an aqueous solution of a tantalum compound and/or a niobium compound, to (2) an aqueous solution of fluorotantalic acid and/or fluoroniobic acid, or to (3) a solution obtained by dissolving crystallized fluorotantalic acid and/or crystallized fluoroniobic acid in water, to produce tantalum hydroxide and/or niobium hydroxide, and firing the tantalum hydroxide and/or niobium hydroxide.

Abstract: A method for preparing tantalum oxide and/or niobium oxide, characterized in that it comprises adding a basic aqueous solution to an aqueous solution of tantalum fluoride salt and/or niobium fluoride salt, to form tantalum hydroxide and/or niobium hydroxide, and then firing said tantalum hydroxide and/or niobium hydroxide. The above method allows the preparation of the tantalum oxide and/or niobium oxide in the state of a needle crystal or columnar crystal, not of a spherical crystal or an assemblage form.

Abstract: This invention aims to develop a chitin oligomer composition and/or a chitosan oligomer composition wherein the content of an oligomer from a trimer to a decamer is 60% or more, and to develop a process for preparing the above-mentioned oligomer composition. The object of the invention can be achieved by mixing hydrofluoric acid or hydrohalogenated acid other than hydrofluoric acid and hydrofluoric acid with a chitin-based material and/or a chitosan-based material.