Abstract: A bismuth-based lead-free glass composition containing 70 to 84% by weight of Bi2O3, 10 to 12% by weight of ZnO, and 6 to 12% by weight of B2O3.

Abstract: A substrate for flexible device. The substrate has a nickel-plated metal sheet having a nickel-plating layer formed on at least one surface of a metal sheet or a nickel-based sheet, and a glass layer of an electrically-insulating layered bismuth-based glass on a surface of the nickel-plating layer or the nickel-based sheet. An oxide layer having a roughened surface is formed on the surface of the nickel-plating layer or the surface of the nickel-based sheet, and the bismuth-based glass contains 70 to 84% by weight of Bi2O3, 10 to 12% by weight of ZnO, and 6 to 12% by weight of B2O3. Also disclosed is a method for producing the substrate for flexible device, a substrate for an organic EL device, a sheet used as a substrate for flexible device, a method for producing the sheet and a bismuth-based lead-free glass composition.

Abstract: A substrate for a flexible device which includes a stainless steel sheet, a nickel plating layer formed on a surface of the stainless steel sheet, and a glass layer of electrical insulating bismuth-based glass formed in the form of layer on a surface of the nickel plating layer.

Abstract: A substrate for flexible device. The substrate has a nickel-plated metal sheet having a nickel-plating layer formed on at least one surface of a metal sheet or a nickel-based sheet, and a glass layer of an electrically-insulating layered bismuth-based glass on a surface of the nickel-plating layer or the nickel-based sheet. An oxide layer having a roughened surface is formed on the surface of the nickel-plating layer or the surface of the nickel-based sheet, and the bismuth-based glass contains 70 to 84% by weight of Bi2O3, 10 to 12% by weight of ZnO, and 6 to 12% by weight of B2O3. Also disclosed is a method for producing the substrate for flexible device, a substrate for an organic EL device, a sheet used as a substrate for flexible device, a method for producing the sheet and a bismuth-based lead-free glass composition.

Abstract: A substrate for flexible device, including a stainless steel sheet, an oxide layer formed on a surface of the stainless steel sheet, and a glass layer of electrically-insulating bismuth-based glass formed in a form of layer on the surface of the oxide layer. Also disclosed is a sheet for flexible device, including a stainless steel sheet, and an oxide layer on a surface of the stainless steel sheet, the oxide layer having a thickness of not less than 30 nm.

Abstract: A substrate for flexible device. The substrate has a nickel-plated metal sheet having a nickel-plating layer formed on at least one surface of a metal sheet or a nickel-based sheet, and a glass layer of an electrically-insulating layered bismuth-based glass on a surface of the nickel-plating layer or the nickel-based sheet. An oxide layer having a roughened surface is formed on the surface of the nickel-plating layer or the surface of the nickel-based sheet, and the bismuth-based glass contains 70 to 84% by weight of Bi2O3, 10 to 12% by weight of ZnO, and 6 to 12% by weight of B2O3. Also disclosed is a method for producing the substrate for flexible device, a substrate for an organic EL device, a sheet used as a substrate for flexible device, a method for producing the sheet and a bismuth-based lead-free glass composition.

Abstract: A substrate for a flexible device which includes a stainless steel sheet, a nickel plating layer formed on a surface of the stainless steel sheet, and a glass layer of electrical insulating bismuth-based glass formed in the form of layer on a surface of the nickel plating layer.

Abstract: The present invention relates to a substrate for flexible device. The substrate has a nickel-plated metal sheet having a nickel-plating layer formed on at least one surface of a metal sheet or a nickel-based sheet, and a glass layer of an electrically-insulating layered bismuth-based glass on a surface of the nickel-plating layer or the nickel-based sheet. An oxide layer having a roughened surface is formed on the surface of the nickel-plating layer or the surface of the nickel-based sheet, and the bismuth-based glass contains 70 to 84% by weight of Bi2O3, 10 to 12% by weight of ZnO, and 6 to 12% by weight of B2O3. This substrate for flexible device is excellent in moisture barrier properties and adhesion of the glass layer, and also in a surface smoothness since occurrence of seeding and cissing on the glass layer surface can be prevented or controlled effectively.

Abstract: A unit cell for an integrated circuit includes a first conductive type active region and a second conductive type active region which extend in a first direction. Each of the active regions has first and second ends. The first end of the second conductive type active region opposes the second end of the first conductive type active region. A poly-silicon pattern extends in the first direction across the first conductive type active region and second conductive type active region. A first contact region is adjacent the first end of the first conductive type active region in the first direction. A second contact region is adjacent the second end of the second conductive type active region in the first direction.

Abstract: A unit cell for an integrated circuit includes a first conductive type active region and a second conductive type active region which extend in a first direction. Each of the active regions has first and second ends. The first end of the second conductive type active region opposes the second end of the first conductive type active region. A poly-silicon pattern extends in the first direction across the first conductive type active region and second conductive type active region. A first contact region is adjacent the first end of the first conductive type active region in the first direction. A second contact region is adjacent the second end of the second conductive type active region in the first direction.

Abstract: In a unit cell, a first conductive type active region and a second conductive type active region are provided. Those two active regions extend in a first direction. Each of the active regions have first and second ends thereof. The first end of the second conductive type active region opposes the second end of the first conductive type active region. A conductive pattern is provided to extend in the first direction across the first conductive type active region and the second conductive type active region. A first contact region is arranged adjacent the first end of the first conductive type active region in the first direction. A second contact region is arranged adjacent the second end of the second conductive type active region in the first direction.

Abstract: Disclosed is a lead-free low softening point glass whose composition lies within the system SnO—P2O5 and containing over 5 to 30 mol % of MnO. The addition of MnO allows the water resistance and coefficient of thermal expansion of the glass to be improved without spoiling its feature of a low softening point. The lead-free low softening point glass can be prepared through a simplified production process.

Abstract: Disclosed is a lead-free low softening point glass whose composition lies within the system SnO—P2O5 and containing over 5 to 30 mol % of MnO. The addition of MnO allows the water resistance and coefficient of thermal expansion of the glass to be improved without spoiling its feature of a low softening point. The lead-free low softening point glass can be prepared through a simplified production process.

Abstract: Disclosed is a lead-free low softening point glass whose composition lies within the system SnO—P2O5 and containing over 5 to 30 mol % of MnO. The addition of MnO allows the water resistance and coefficient of thermal expansion of the glass to be improved without spoiling its feature of a low softening point. The lead-free low softening point glass can be prepared through a simplified production process.

Abstract: Disclosed is a lead-free low softening point glass whose composition lies within the system, SnO—P2O5 and containing over 5 to 30 mol % of MnO. The addition of MnO allows the water resistance and coefficient of thermal expansion of the glass to be improved without spoiling its feature of a low softening point. The lead-free low softening point glass can be prepared through a simplified production process.

Abstract: In a method for designing a unit cell, a first conductive type active region and a second conductive type active region are provided. Those two active regions extend in a first direction. Each of the active regions has first and second ends thereof. The first end of the second conductive type active regions is opposing to the second end of the first conductive type active region. In the method, a poly-silicon pattern is provided to extend in the first direction across the first conductive type active region and second conductive type active region. A first contact region is arranged adjacent the first end of the first conductive type active region in the first direction. A second contact region is arranged adjacent the second end of the second conductive type active region in the first direction.

Abstract: In a unit cell, a first conductive type active region and a second conductive type active region are provided. Those two active regions extend in a first direction. Each of the active regions has first and second ends thereof. The first end of the second conductive type active region opposes the second end of the first conductive type active region. A poly-silicon pattern is provided to extend in the first direction across the first conductive type active region and second conductive type active region. A first contact region is arranged adjacent the first end of the first conductive type active region in the first direction. A second contact region is arranged adjacent the second end of the second conductive type active region in the first direction.

Abstract: In a method for designing a unit cell, a first conductive type active region and a second conductive type active region are provided. Those two active regions extend in a first direction. Each of the active regions has first and second ends thereof. The first end of the second conductive type active regions is opposing to the second end of the first conductive type active region. In the method, a poly-silicon pattern is provided to extend in the first direction across the first conductive type active region and second conductive type active region. A first contact region is arranged adjacent the first end of the first conductive type active region in the first direction. A second contact region is arranged adjacent the second end of the second conductive type active region in the first direction.

Abstract: In a unit cell, a first conductive type active region and a second conductive type active region are provided. Those two active regions extend in a first direction. Each of the active regions have first and second ends thereof. The first end of the second conductive type active region opposes the second end of the first conductive type active region. A conductive pattern is provided to extend in the first direction across the first conductive type active region and the second conductive type active region. A first contact region is arranged adjacent the first end of the first conductive type active region in the first direction. A second contact region is arranged adjacent the second end of the second conductive type active region in the first direction.

Abstract: In order to solve the above-described problem, a semiconductor integrated circuit according to the present invention comprises a semiconductor chip, a core area formed over the semiconductor chip and comprised of predetermined circuits, and a plurality of input/output unit cells placed along peripheral edge portions of the semiconductor chip so as to surround the core area and shaped in the form of bent patterns. Further, a semiconductor integrated circuit according to another invention comprises a semiconductor chip, a core area formed over the semiconductor chip and comprised of predetermined circuits, and a plurality of input/output unit cells placed aslant toward peripheral portions of the semiconductor chip so as to surround the core area.