Abstract: A solar cell manufacturing method includes a step of forming a diffusion layer including a first section and a second section on a light-receiving side of a semiconductor substrate, where the first section has a first concentration of impurities, and the second section has a second concentration of the impurities that is higher than the first concentration, a step of irradiating the diffusion layer with detection light that is reflected at a higher reflectivity on the first section than on the second section, and a step of detecting the first section that corresponds to a first reflectivity, and the second section that corresponds to a second reflectivity that is lower than the first reflectivity in the diffusion layer on the basis of a difference in reflectivity of the detection light reflected off the respective sections of the diffusion layer.

Abstract: A solar cell manufacturing method includes a step of forming a diffusion layer including a first section and a second section on a light-receiving side of a semiconductor substrate, where the first section has a first concentration of impurities, and the second section has a second concentration of the impurities that is higher than the first concentration, a step of irradiating the diffusion layer with detection light that is reflected at a higher reflectivity on the first section than on the second section, and a step of detecting the first section that corresponds to a first reflectivity, and the second section that corresponds to a second reflectivity that is lower than the first reflectivity in the diffusion layer on the basis of a difference in reflectivity of the detection light reflected off the respective sections of the diffusion layer.

Abstract: The method comprises a first step (S1 in FIG. 1) of obtaining a transmission image, a second step (S2) of applying a quadratic differential filter to the transmission image, thereby to emphasize a part of large luminance change as a quadratic differential filter image, a third step (S3) of binarizing the quadratic differential filter image with a predetermined threshold value, and then storing the resulting binarized image, a fourth step (S4) of binarizing the transmission image with another predetermined threshold value, and then storing the resulting binarized image, a fifth step (S5) of performing the measurement of binary feature quantities for the binarized image stored at the third step (S3) and the binarized image stored at the fourth step (S4), and a sixth step (S6) of deciding the quality of the object to-be-inspected from the binary feature quantities.

Abstract: In an inspection of a semiconductor wafer for a defect, when infrared light passing through a semiconductor wafer is imaged by a camera and an inspection is conducted using the image, a problem that halation occurs in the camera due to light leaking from the side of the inspection object, which makes it impossible to conduct an inspection at the periphery portion occurs. An inspection object is irradiated by an infrared light source, and transmitted light is imaged by an infrared camera to be conducted. With the use of mask means that secures a clearance from the end portion on the outer side, it is possible to inspect on the peripheral portion. Also, as means for supporting the object, plural sets of those configured to be capable of evacuating are used, and by allowing the plural sets to evacuate alternately, it is possible to inspect across the entire surface.

Abstract: The method comprises a first step (S1 in FIG. 1) of obtaining a transmission image, a second step (S2) of applying a quadratic differential filter to the transmission image, thereby to emphasize a part of large luminance change as a quadratic differential filter image, a third step (S3) of binarizing the quadratic differential filter image with a predetermined threshold value, and then storing the resulting binarized image, a fourth step (S4) of binarizing the transmission image with another predetermined threshold value, and then storing the resulting binarized image, a fifth step (S5) of performing the measurement of binary feature quantities for the binarized image stored at the third step (S3) and the binarized image stored at the fourth step (S4), and a sixth step (S6) of deciding the quality of the object to-be-inspected from the binary feature quantities.

Abstract: In an inspection of a semiconductor wafer for a defect, when infrared light passing through a semiconductor wafer is imaged by a camera and an inspection is conducted using the image, a problem that halation occurs in the camera due to light leaking from the side of the inspection object, which makes it impossible to conduct an inspection at the periphery portion occurs. An inspection object is irradiated by an infrared light source, and transmitted light is imaged by an infrared camera to be conducted. With the use of mask means that secures a clearance from the end portion on the outer side, it is possible to inspect on the peripheral portion. Also, as means for supporting the object, plural sets of those configured to be capable of evacuating are used, and by allowing the plural sets to evacuate alternately, it is possible to inspect across the entire surface.

Abstract: In a mask assembly for a color cathode ray tube, the color selection mask has the form of a thin metal plate with relatively long vertical slits alternating with vertical columns of relatively short slots, at least in the central screen area. The metal strips bounding a column of slots are joined by real bridges, which define the slots. Dummy bridges project from the metal strips into the slits, to reduce the electron beam flux transmitted through the slits to approximately the same level as the electron beam flux transmitted through the columns of slots, thereby preventing brightness irregularities on the screen. The alternate arrangement of slits and columns of slots also reduces vibration and prevents doming.