Abstract: A semiconductor laser device includes: a substrate having a principal plane; a photonic crystal layer having an epitaxial layer of gallium nitride formed on substrate in a direction in which principal plane extends and a low refractive index material having a refractive index lower than that of epitaxial layer; an n-type clad layer formed on substrate; a p-type clad layer formed on substrate; an active layer that is interposed between n-type clad layer and p-type clad layer and emits light when a carrier is injected thereinto; and a GaN layer that covers a region directly on photonic crystal layer. Thus, the semiconductor laser device can be manufactured without fusion.

Abstract: A semiconductor laser device (1) includes: a substrate (3) having a principal plane (3a); a photonic crystal layer (7) having an epitaxial layer (2a) of gallium nitride formed on substrate (3) in a direction in which principal plane (3a) extends and a low refractive index material (2b) having a refractive index lower than that of epitaxial layer (2a); an n-type clad layer (4) formed on substrate (3); a p-type clad layer (6) formed on substrate (3); an active layer (5) that is interposed between n-type clad layer (4) and p-type clad layer (6) and emits light when a carrier is injected thereinto; and a GaN layer (12) that covers a region directly on photonic crystal layer (7). Thus, the semiconductor laser device can be manufactured without fusion.