Patents by Inventor Hirohisa Yamazaki

Hirohisa Yamazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220186368
    Abstract: A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. A second fluid supply part is configured to supply a second carrier gas toward the mixed fluid at the second portion.
    Type: Application
    Filed: March 8, 2022
    Publication date: June 16, 2022
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Atsushi MORIKAWA, Masakazu SHIMADA, Takeshi KASAI, Kenichi SUZAKI, Hirohisa YAMAZAKI, Yoshimasa NAGATOMI
  • Patent number: 11293096
    Abstract: A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. A second fluid supply part is configured to supply a second carrier gas toward the mixed fluid at the second portion.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: April 5, 2022
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Atsushi Morikawa, Masakazu Shimada, Takeshi Kasai, Kenichi Suzaki, Hirohisa Yamazaki, Yoshimasa Nagatomi
  • Publication number: 20220090260
    Abstract: A technique capable of suppressing an adhesion of deposits to an inside of a reaction vessel of a substrate processing apparatus is described. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate retainer provided with a substrate support region; a heat insulator provided below the substrate support region; and a reaction vessel of a cylindrical shape in which the substrate retainer and the heat insulator are accommodated, wherein the reaction vessel includes: an auxiliary chamber protruding outward in a radial direction of the reaction vessel and extending along an extending direction from at least a position below an upper end of the heat insulator to a position facing the substrate support region; and a first cover provided in the auxiliary chamber along a plane perpendicular to the extending direction of the auxiliary chamber so as to divide an inner space of the auxiliary chamber.
    Type: Application
    Filed: September 15, 2021
    Publication date: March 24, 2022
    Inventor: Hirohisa YAMAZAKI
  • Publication number: 20210292895
    Abstract: Described herein is a technique capable of stabilizing a supply flow rate of a vaporized gas. According to one aspect of the technique, there is provided a vaporizer including: a liquid vessel in which a liquid source is stored; a first heater capable of heating the liquid source by immersion into the liquid source stored in the liquid vessel; a second heater capable of heating the liquid vessel; a first temperature sensor capable of measuring a temperature of the liquid source by immersion into the liquid source; a second temperature sensor capable of measuring a temperature of the liquid vessel; and a controller capable of controlling the first heater based on the temperature measured by the first temperature sensor and controlling the second heater based on the temperature measured by the second temperature sensor.
    Type: Application
    Filed: March 17, 2021
    Publication date: September 23, 2021
    Applicant: Kokusai Electric Corporation
    Inventors: Gen LI, Hirohisa YAMAZAKI, Kenichi SUZAKI
  • Publication number: 20210193486
    Abstract: There is provided a technique that includes: (a) supplying a chlorine-containing gas to an interior of a process vessel, to which an oxide film adheres, under a first pressure; (b) exhausting the interior of the process vessel; (c) supplying an oxygen-containing gas into the process vessel; (d) exhausting the interior of the process vessel; (e) supplying the chlorine-containing gas into the process vessel under a second pressure lower than the first pressure; (f) exhausting the interior of the process vessel; (g) supplying the oxygen-containing gas into the process vessel; and (h) exhausting the interior of the process vessel, wherein the oxide film which adheres to the interior of the process vessel is removed by performing each of (a) to (h) one or more times and setting a supply amount of the oxygen-containing gas in (c) different from a supply amount of the oxygen-containing gas in (g).
    Type: Application
    Filed: March 3, 2021
    Publication date: June 24, 2021
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Gen LI, Hirohisa YAMAZAKI, Kenichi SUZAKI, Yuji TAKEBAYASHI
  • Publication number: 20210079523
    Abstract: There is provided a technique that includes a precursor vessel in which a liquid precursor is stored; a first heater immersed in the liquid precursor stored in the precursor vessel and configured to heat the liquid precursor; a second heater configured to heat the precursor vessel; a first temperature sensor immersed in the liquid precursor stored in the precursor vessel and configured to measure a temperature of the liquid precursor; a second temperature sensor immersed in the liquid precursor stored in the precursor vessel and configured to measure a temperature of the liquid precursor; and a controller configured to be capable of: controlling the first heater based on the temperature measured by the first temperature sensor; and controlling the second heater based on the temperature measured by the second temperature sensor.
    Type: Application
    Filed: September 16, 2020
    Publication date: March 18, 2021
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Hirohisa YAMAZAKI, Ryuichi NAKAGAWA, Kenichi SUZAKI, Yasunori EJIRI
  • Patent number: 10910217
    Abstract: By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.
    Type: Grant
    Filed: May 29, 2020
    Date of Patent: February 2, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshimasa Nagatomi, Hirohisa Yamazaki
  • Publication number: 20200294790
    Abstract: By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.
    Type: Application
    Filed: May 29, 2020
    Publication date: September 17, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshimasa NAGATOMI, Hirohisa YAMAZAKI
  • Patent number: 10707074
    Abstract: By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.
    Type: Grant
    Filed: March 22, 2018
    Date of Patent: July 7, 2020
    Assignee: Kokusai Electric Corporation
    Inventors: Yoshimasa Nagatomi, Hirohisa Yamazaki
  • Patent number: 10297440
    Abstract: Provided is a technique for forming a film having a desired stress on a substrate. A method of manufacturing a semiconductor device includes: forming a film having a predetermined stress on a substrate by controlling a ratio of a thickness of a first film having compressive stress to a thickness of a second film having tensile stress by performing: (a) supplying an organic source gas containing a first element and a reactive gas containing a second element to the substrate to form the first film containing the first element and the second element; and (b) supplying an inorganic source gas containing the first element and the reactive gas to the substrate to form the second film containing the first element and the second element.
    Type: Grant
    Filed: September 26, 2016
    Date of Patent: May 21, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Hirohisa Yamazaki, Noriyuki Isobe, Hiroshi Ashihara
  • Patent number: 10214313
    Abstract: The present invention is a bottle that is formed from a synthetic resin material in a cylindrical shape having a bottom at one end, including: a plurality of circumferential grooves that extend continuously around the entire circumference of a body portion and are formed at a distance from each other in a vertical direction. The circumferential grooves extend cyclically in a circumferential direction while undulating in the vertical direction when viewed from the side of the body portion as to form wave patterns, and the respective phases of circumferential grooves that are mutually adjacent to each other in the vertical direction are offset from each other.
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: February 26, 2019
    Assignee: YOSHINO KOGYOSHO CO., LTD.
    Inventors: Tadayoshi Oshino, Hiromichi Saito, Hirohisa Yamazaki, Takuya Nishimura
  • Publication number: 20180286725
    Abstract: Described is a technique capable of reducing an effect of a substrate retainer on a substrate processing while maintaining a strength of a substrate retainer. Provided is a substrate retainer configured to support a plurality of substrates in horizontal orientation with an interval therebetween, the substrate retainer including: main support columns; and auxiliary support columns, wherein: each main support columns is provided with a substrate support member configured to support a substrate; a diameter of each of the auxiliary support columns is larger than a diameter of each of the main support columns and smaller than a length of the substrate support member; a distance between an edge of the substrate and each of the auxiliary support columns is shorter than a distance between the edge of the substrate and each of the main support columns; and all of the auxiliary support columns are not in contact with the substrate.
    Type: Application
    Filed: March 29, 2018
    Publication date: October 4, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kazuki NONOMURA, Hirohisa YAMAZAKI
  • Publication number: 20180286662
    Abstract: By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.
    Type: Application
    Filed: March 22, 2018
    Publication date: October 4, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshimasa NAGATOMI, Hirohisa YAMAZAKI
  • Publication number: 20180135176
    Abstract: A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. A second fluid supply part is configured to supply a second carrier gas toward the mixed fluid at the second portion.
    Type: Application
    Filed: January 12, 2018
    Publication date: May 17, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Atsushi MORIKAWA, Masakazu SHIMADA, Takeshi KASAI, Kenichi SUZAKI, Hirohisa YAMAZAKI, Yoshimasa NAGATOMI
  • Patent number: 9768012
    Abstract: There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: September 19, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hirohisa Yamazaki, Yuji Takebayashi, Masanori Sakai, Tsutomu Kato
  • Publication number: 20170092490
    Abstract: Provided is a technique for forming a film having a desired stress on a substrate. A method of manufacturing a semiconductor device includes: forming a film having a predetermined stress on a substrate by controlling a ratio of a thickness of a first film having compressive stress to a thickness of a second film having tensile stress by performing: (a) supplying an organic source gas containing a first element and a reactive gas containing a second element to the substrate to form the first film containing the first element and the second element; and (b) supplying an inorganic source gas containing the first element and the reactive gas to the substrate to form the second film containing the first element and the second element.
    Type: Application
    Filed: September 26, 2016
    Publication date: March 30, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hirohisa YAMAZAKI, Noriyuki ISOBE, Hiroshi ASHIHARA
  • Patent number: 9401282
    Abstract: Provided is a method of manufacturing a semiconductor device, which efficiently removes a high permittivity film (high-k film). The method of manufacturing a semiconductor device includes: (a) supplying a processing gas containing an organic compound into a process chamber to form a predetermined film on a substrate; (b) supplying a first cleaning gas into the process chamber with the substrate being unloaded from the process chamber to remove films adhered to an inner wall of a reaction tube defining the process chamber and members disposed in the process chamber; (c) supplying a modifying gas into the process chamber after performing (b) to modify a carbon-containing film remaining in a nozzle of the members configured to supply the processing gas; and (d) supplying a second cleaning gas into the process chamber to remove a film obtained by modifying the carbon-containing film in (c).
    Type: Grant
    Filed: March 29, 2013
    Date of Patent: July 26, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventor: Hirohisa Yamazaki
  • Patent number: 9206931
    Abstract: Substrate processing uniformity is improved in the surfaces of wafers and between the wafers. A method of manufacturing a semiconductor device, including: loading a substrate holder into an inner tube, the substrate holder holding a plurality of substrates in a state where the plurality of substrates are horizontally oriented and stacked; forming thin films on the plurality of substrates by supplying a source gas to an inside of the inner tube; and unloading the substrate holder from the inner tube, wherein the forming the thin films is performed in a state where a conductance of a space between an inner wall of the inner tube and a gas penetration preventing cylinder is smaller than a conductance of a region where the plurality of substrates are stacked.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: December 8, 2015
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Hirohisa Yamazaki, Satoshi Okada, Tsutomu Kato
  • Publication number: 20150243493
    Abstract: There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.
    Type: Application
    Filed: May 13, 2015
    Publication date: August 27, 2015
    Inventors: Hirohisa YAMAZAKI, Yuji TAKEBAYASHI, Masanori SAKAI, Tsutomu KATO
  • Publication number: 20150008210
    Abstract: The present invention is a bottle that is formed from a synthetic resin material in a cylindrical shape having a bottom at one end, including: a plurality of circumferential grooves that extend continuously around the entire circumference of a body portion and are formed at a distance from each other in a vertical direction. The circumferential grooves extend cyclically in a circumferential direction while undulating in the vertical direction when viewed from the side of the body portion as to form wave patterns, and the respective phases of circumferential grooves that are mutually adjacent to each other in the vertical direction are offset from each other.
    Type: Application
    Filed: December 20, 2012
    Publication date: January 8, 2015
    Applicant: YOSHINO KOGYOSHO CO., LTD.
    Inventors: Tadayoshi Oshino, Hiromichi Saito, Hirohisa Yamazaki, Takuya Nishimura