Abstract: According to the present disclosure, there is provided a technique capable of improving device characteristics. According to some embodiments of the present disclosure, there is provided a technique that includes: (A) processing a substrate by performing a first cycle a first predetermined number of times, wherein the first cycle includes: (a) supplying a first halogen element-containing gas to the substrate; and (b) supplying a second halogen element-containing gas to the substrate; and (B) processing the substrate by performing a second cycle a second predetermined number of times, wherein the second cycle includes: (c) supplying a modification gas to the substrate; and (d) supplying a third halogen element-containing gas to the substrate.

Abstract: Described herein is a technique capable of stabilizing a supply flow rate of a vaporized gas. According to one aspect of the technique, there is provided a vaporizer including: a vessel in which a source is stored; a first heater capable of heating the source by immersion into the source stored in the vessel; a second heater capable of heating the vessel; a first temperature sensor capable of measuring a temperature of the source by immersion into the source; a second temperature sensor capable of measuring a temperature of the vessel; and a controller capable of controlling the first heater based on the temperature measured by the first temperature sensor and controlling the second heater based on the temperature measured by the second temperature sensor.

Abstract: Described herein is a technique capable of stabilizing a supply flow rate of a vaporized gas. According to one aspect of the technique, there is provided a vaporizer including: a liquid vessel in which a liquid source is stored; a first heater capable of heating the liquid source by immersion into the liquid source stored in the liquid vessel; a second heater capable of heating the liquid vessel; a first temperature sensor capable of measuring a temperature of the liquid source by immersion into the liquid source; a second temperature sensor capable of measuring a temperature of the liquid vessel; and a controller capable of controlling the first heater based on the temperature measured by the first temperature sensor and controlling the second heater based on the temperature measured by the second temperature sensor.

Abstract: There is provided a technique that includes a precursor vessel in which a liquid precursor is stored; a first heater immersed in the liquid precursor stored in the precursor vessel and configured to heat the liquid precursor; a second heater configured to heat the precursor vessel; a first temperature sensor immersed in the liquid precursor stored in the precursor vessel and configured to measure a temperature of the liquid precursor; a second temperature sensor immersed in the liquid precursor stored in the precursor vessel and configured to measure a temperature of the liquid precursor; and a controller configured to be capable of: controlling the first heater based on the temperature measured by the first temperature sensor; and controlling the second heater based on the temperature measured by the second temperature sensor.

Abstract: There is provided a technique that includes forming a film containing a first element and oxygen on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a modifying agent to the substrate to form, on the substrate, an adsorption layer containing the modifying agent physically adsorbed on a surface of the substrate; (b) supplying a precursor containing the first element to the substrate and causing the precursor to react with the surface of the substrate to form a first layer containing the first element on the substrate; and (c) supplying an oxidizing agent to the substrate and causing the oxidizing agent to react with the first layer to modify the first layer into a second layer containing the first element and oxygen.

Abstract: Described herein is a technique capable of suppressing an adhesion of deposits to an inside of a reaction vessel of a substrate processing apparatus. According to one aspect, there is provided a substrate processing apparatus including: a substrate retainer provided with a substrate support region; a heat insulator provided below the substrate support region; and a reaction vessel of a cylindrical shape in which the substrate retainer and the heat insulator are accommodated, wherein the reaction vessel includes: an auxiliary chamber protruding outward in a radial direction of the reaction vessel and extending along an extending direction from at least a position below an upper end of the heat insulator to a position facing the substrate support region; and a first cover provided in the auxiliary chamber along a plane perpendicular to the extending direction of the auxiliary chamber so as to divide an inner space of the auxiliary chamber.

Abstract: A technique capable of suppressing an adhesion of deposits to an inside of a reaction vessel of a substrate processing apparatus is described. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate retainer provided with a substrate support region; a heat insulator provided below the substrate support region; and a reaction vessel of a cylindrical shape in which the substrate retainer and the heat insulator are accommodated, wherein the reaction vessel includes: an auxiliary chamber protruding outward in a radial direction of the reaction vessel and extending along an extending direction from at least a position below an upper end of the heat insulator to a position facing the substrate support region; and a first cover provided in the auxiliary chamber along a plane perpendicular to the extending direction of the auxiliary chamber so as to divide an inner space of the auxiliary chamber.

Abstract: Provided is a technique including: a processing chamber that processes a substrate; a first gas supplier that supplies a metal-containing gas into the processing chamber; a second gas supplier that supplies a first oxygen-containing gas into the processing chamber; and an exhauster including a gas exhaust pipe and a trap that collects a component of the metal-containing gas contained in an exhaust gas using plasma, the exhauster discharging the exhaust gas from the processing chamber.

Abstract: A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. A second fluid supply part is configured to supply a second carrier gas toward the mixed fluid at the second portion.

Abstract: A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. A second fluid supply part is configured to supply a second carrier gas toward the mixed fluid at the second portion.

Abstract: A technique capable of suppressing an adhesion of deposits to an inside of a reaction vessel of a substrate processing apparatus is described. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate retainer provided with a substrate support region; a heat insulator provided below the substrate support region; and a reaction vessel of a cylindrical shape in which the substrate retainer and the heat insulator are accommodated, wherein the reaction vessel includes: an auxiliary chamber protruding outward in a radial direction of the reaction vessel and extending along an extending direction from at least a position below an upper end of the heat insulator to a position facing the substrate support region; and a first cover provided in the auxiliary chamber along a plane perpendicular to the extending direction of the auxiliary chamber so as to divide an inner space of the auxiliary chamber.

Abstract: Described herein is a technique capable of stabilizing a supply flow rate of a vaporized gas. According to one aspect of the technique, there is provided a vaporizer including: a liquid vessel in which a liquid source is stored; a first heater capable of heating the liquid source by immersion into the liquid source stored in the liquid vessel; a second heater capable of heating the liquid vessel; a first temperature sensor capable of measuring a temperature of the liquid source by immersion into the liquid source; a second temperature sensor capable of measuring a temperature of the liquid vessel; and a controller capable of controlling the first heater based on the temperature measured by the first temperature sensor and controlling the second heater based on the temperature measured by the second temperature sensor.

Abstract: There is provided a technique that includes: (a) supplying a chlorine-containing gas to an interior of a process vessel, to which an oxide film adheres, under a first pressure; (b) exhausting the interior of the process vessel; (c) supplying an oxygen-containing gas into the process vessel; (d) exhausting the interior of the process vessel; (e) supplying the chlorine-containing gas into the process vessel under a second pressure lower than the first pressure; (f) exhausting the interior of the process vessel; (g) supplying the oxygen-containing gas into the process vessel; and (h) exhausting the interior of the process vessel, wherein the oxide film which adheres to the interior of the process vessel is removed by performing each of (a) to (h) one or more times and setting a supply amount of the oxygen-containing gas in (c) different from a supply amount of the oxygen-containing gas in (g).

Abstract: There is provided a technique that includes a precursor vessel in which a liquid precursor is stored; a first heater immersed in the liquid precursor stored in the precursor vessel and configured to heat the liquid precursor; a second heater configured to heat the precursor vessel; a first temperature sensor immersed in the liquid precursor stored in the precursor vessel and configured to measure a temperature of the liquid precursor; a second temperature sensor immersed in the liquid precursor stored in the precursor vessel and configured to measure a temperature of the liquid precursor; and a controller configured to be capable of: controlling the first heater based on the temperature measured by the first temperature sensor; and controlling the second heater based on the temperature measured by the second temperature sensor.

Abstract: By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.

Abstract: By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.

Abstract: By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.

Abstract: Provided is a technique for forming a film having a desired stress on a substrate. A method of manufacturing a semiconductor device includes: forming a film having a predetermined stress on a substrate by controlling a ratio of a thickness of a first film having compressive stress to a thickness of a second film having tensile stress by performing: (a) supplying an organic source gas containing a first element and a reactive gas containing a second element to the substrate to form the first film containing the first element and the second element; and (b) supplying an inorganic source gas containing the first element and the reactive gas to the substrate to form the second film containing the first element and the second element.

Abstract: The present invention is a bottle that is formed from a synthetic resin material in a cylindrical shape having a bottom at one end, including: a plurality of circumferential grooves that extend continuously around the entire circumference of a body portion and are formed at a distance from each other in a vertical direction. The circumferential grooves extend cyclically in a circumferential direction while undulating in the vertical direction when viewed from the side of the body portion as to form wave patterns, and the respective phases of circumferential grooves that are mutually adjacent to each other in the vertical direction are offset from each other.

Abstract: By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.