Abstract: To reduce the wiring inductance when establishing electrical connection between a semiconductor laser and a laser driver in a semiconductor laser driving apparatus. A semiconductor laser driving apparatus includes a substrate, a laser driver, and a semiconductor laser. The substrate incorporates the laser driver. The semiconductor laser is mounted on one surface of the substrate. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. A shield suppresses flow of electromagnetic waves to/from an outside of the semiconductor laser driving apparatus for at least one of the semiconductor laser and the laser driver.

Abstract: In a semiconductor laser drive device, wiring inductance between a semiconductor laser and a laser driver is reduced. A substrate has a laser driver built inside. A semiconductor laser is mounted on one surface of a substrate of the semiconductor laser drive device and emits irradiation light from an irradiation surface. A connection wiring electrically connects the laser driver and the semiconductor laser with a wiring inductance of 0.5 nH or less. A passive component is disposed to face a side of the semiconductor laser having the least number of pads and connects to the semiconductor laser and the laser driver.

Abstract: An object of the present technique is to easily downsize a semiconductor laser driving apparatus incorporating a laser driver. A semiconductor laser driving apparatus includes a substrate, a laser driver, a semiconductor laser, side walls, and a test pad. The substrate incorporates the laser driver. The semiconductor laser is mounted on one surface of the substrate of the semiconductor laser driving apparatus. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. The outer walls surround a predetermined mounting region that is included in the one surface of the substrate and where the semiconductor laser is mounted. The test pad is provided in a region that is included in the one surface of the substrate but does not correspond to the mounting region.

Abstract: A light emitting device includes a first substrate, a light source on a first surface of the first substrate and that emits light toward an object, and a driver disposed in the first substrate and that drives the light source. The driver overlaps the light source in a plan view. The light emitting device includes at least one first via disposed in the first substrate and overlapping the driver in the plan view, and a first conductor on a second surface of the first substrate opposite the first surface and overlapping the light source, the driver, and the at least one first via in the plan view. The first conductor is connected to the at least one first via.

Abstract: An object of the present technique is to improve safety in a semiconductor laser driving apparatus that diffuses laser light by a diffusion plate. A substrate incorporates a laser driver, and a semiconductor laser is mounted on one surface of the substrate. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. A diffusion plate diffuses laser light irradiated by the semiconductor laser. A transparent conductive film is formed on a predetermined surface of the diffusion plate. In addition, the laser driver drives the semiconductor laser to irradiate the laser light on the basis of an electric characteristic value of the conductive film.

Abstract: An object of the present technique is to obtain excellent heat radiation characteristics with a simple structure in a semiconductor laser driving apparatus. A semiconductor laser driving apparatus includes a substrate, a laser driver, and a semiconductor laser. The substrate incorporates the laser driver. The semiconductor laser is mounted on one surface of the substrate. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. Side walls surround a region including the semiconductor laser on the surface of the substrate where the semiconductor laser is mounted. The side walls have a heat storage material therein.

Abstract: To reduce the wiring inductance between a semiconductor laser and a laser driver in a semiconductor laser driving apparatus. A substrate incorporates a laser driver. A semiconductor laser is mounted on one surface of the substrate of a semiconductor laser driving apparatus to emit irradiation light from an irradiation surface. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. A first optical element is provided on the irradiation surface side of the semiconductor laser. A second optical element is provided outside the first optical element on the irradiation surface side of the semiconductor laser.

Abstract: To reduce the wiring inductance between a semiconductor laser and a laser driver in a semiconductor laser driving apparatus. A substrate incorporates a laser driver. A semiconductor laser is mounted on one surface of the substrate of a semiconductor laser driving apparatus to emit irradiation light from an irradiation surface. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. A temperature sensor measures a temperature relating to the semiconductor laser. A memory stores control data from the laser driver to the semiconductor laser in a manner corresponding to the temperature.

Abstract: The present technique reduces the wiring inductance between a semiconductor laser and a laser driver in a semiconductor laser driving apparatus. A semiconductor laser driving apparatus includes a substrate, a laser driver, and a semiconductor laser. The substrate incorporates the laser driver. The semiconductor laser has at least one light emitting point. The semiconductor laser is mounted on one surface of the substrate in such a manner that an electrode of the light emitting point and a pattern of the substrate are connected to each other via a bump. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. A sealing portion seals a connection terminal portion of the semiconductor laser for the substrate.

Abstract: A device includes a first substrate (903), a second substrate (100) on the first substrate (903), and a light emitting device (11) including a light source (300) on the second substrate (100) and that emits light toward an object. The light emitting device includes a driver (200) disposed in the second substrate (100) and that drives the light source (300). A portion of the driver (200) overlaps a first portion of the light source (300) in a plan view. The device includes an imaging device (12) on the first substrate adjacent to the light emitting device (11) and that senses light reflected from the object. The light-emitting device (11) reduces the wiring inductance by electrically connecting the light source (300) and the driver (200) via the connecting via (101). Further, the second substrate (100) includes a thermal via (102) for heat radiation. Considering that a certain number of thermal vias (102) are arranged immediately below the light source (300), the amount of overlap is desirably 50% or less.

Abstract: An object of the present technique is to reduce a wiring inductance between a semiconductor laser and a laser driver in a semiconductor laser driving apparatus. A semiconductor laser driving apparatus includes a substrate, a laser driver, and a semiconductor laser. The substrate incorporates the laser driver. The semiconductor laser is mounted on one surface of the substrate of the semiconductor laser driving apparatus. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. A sealing portion seals a connection terminal portion of the semiconductor laser for the substrate.

Abstract: To provide a semiconductor device further reduced in size. A semiconductor device including: a multilayer wiring board one surface of which is provided with an external connection terminal; and a plurality of active components that are provided to be stacked inside the multilayer wiring board and are connected to the external connection terminal via a connection via. The plurality of active components include a first active component provided on another surface side that is opposite to the one surface, and a second active component that is provided closer to the one surface than the first active component is and has a smaller planar area than the first active component.

Abstract: To provide a semiconductor device further reduced in size. A semiconductor device including: a multilayer wiring board one surface of which is provided with an external connection terminal; and a plurality of active components that are provided to be stacked inside the multilayer wiring board and are connected to the external connection terminal via a connection via. The plurality of active components include a first active component provided on another surface side that is opposite to the one surface, and a second active component that is provided closer to the one surface than the first active component is and has a smaller planar area than the first active component.

Abstract: Deformation of a semiconductor chip is to be prevented in a semiconductor device in which a heat releasing plate and a circuit board are disposed. The semiconductor device includes the semiconductor chip, the circuit board, the heat releasing plate, an adhesive member, and a conductive member. The circuit board transmits a signal of the semiconductor chip. The heat releasing plate has the semiconductor chip disposed thereon, and has an opening in a region on the outer side of a semiconductor chip placement region that is a region in which the semiconductor chip is disposed. The adhesive member is disposed in a region on the outer side of the opening on a different surface of the heat releasing plate from the surface on which the semiconductor chip is disposed, and bonds the circuit board and the heat releasing plate to each other. The conductive member connects the semiconductor chip and the circuit board to each other via the opening.

Abstract: To provide a semiconductor device further reduced in size. A semiconductor device including: a multilayer wiring board one surface of which is provided with an external connection terminal; and a plurality of active components that are provided to be stacked inside the multilayer wiring board and are connected to the external connection terminal via a connection via. The plurality of active components include a first active component provided on another surface side that is opposite to the one surface, and a second active component that is provided closer to the one surface than the first active component is and has a smaller planar area than the first active component.

Abstract: In a semiconductor laser drive device, a wiring inductance in electrically connecting a semiconductor laser and a laser driver is reduced. The semiconductor laser drive device includes a substrate, the laser driver, and the semiconductor laser. The laser driver is built in the substrate. The semiconductor laser is mounted on one surface of the substrate of the semiconductor laser drive device. Connection wiring electrically connects the laser driver and the semiconductor laser by a wiring inductance of 0.5 nanohenries or less.

Abstract: Provided is a semiconductor device including a wiring board including a plurality of alternately stacked insulating layers and wiring layers, the wiring layers being connected to each other by via-plugs, a semiconductor chip mounted on the wiring board, a heat-dissipating member that is disposed on a side opposite to the wiring board with the semiconductor chip sandwiched between the wiring board and the heat-dissipating member, and dissipates heat generated in the semiconductor chip, a sealing resin layer that is bonded to the wiring board and the heat-dissipating member between the wiring board and the heat-dissipating member, and seals the semiconductor chip from an outer periphery side, and a heat-conducting material that is bonded to the semiconductor chip and the heat-dissipating member between the semiconductor chip and the heat-dissipating member inside the sealing resin layer and conducts heat generated in the semiconductor chip to the heat-dissipating member.

Abstract: A semiconductor device includes: a substrate including an electrode pad on a surface; a semiconductor chip placed on the substrate so as to be electrically connected to the electrode pad; a first resin layer which is formed on the substrate and is also filled between the substrate and the semiconductor chip; and a second resin layer, laminated on the first resin layer, which has an elastic modulus larger than that of the first resin layer.

Abstract: A semiconductor device includes: a substrate including an electrode pad on a surface; a semiconductor chip placed on the substrate so as to be electrically connected to the electrode pad; a first resin layer which is formed on the substrate and is also filled between the substrate and the semiconductor chip; and a second resin layer, laminated on the first resin layer, which has an elastic modulus larger than that of the first resin layer.

Abstract: Disclosed herein is an electronic device which includes a functional part provided in a housing. In a mounting surface of the housing, a mounting part is provided on the side of a side end of the housing with respect to a position corresponding to the functional part, and the mounting surface of the housing is provided with a groove for partitioning from each other the mounting part and a region corresponding to the functional part.