Abstract: In an organic electroluminescence display device which includes: a display region DR in which a plurality of pixels are arranged; and a power source part CC which is arranged outside the display region, each of the plurality of pixels includes: a lower electrode An; a light emitting layer stacked above the lower electrode; and an upper electrode which includes a thin silver film AG and is formed by a layer shared in common by other pixels above the light emitting layer, the upper electrode extends to the power source part for electrically connection, the thin silver film has a portion arranged between the display region and the power source part, and a background layer containing an electron pair donor is arranged as a background of at least a portion of the thin silver film between the display region and the power source part.

Abstract: Provided is an evaporation apparatus which reduces deformation of a mask, improves adhesion between a substrate and an evaporation mask, and improves accuracy of dividing a region on which a film is to be formed and a region on which the film is not to be formed. The evaporation apparatus includes a pressing mechanism for pressing a film forming substrate disposed on an evaporation mask including a magnetic material against the evaporation mask. The pressing mechanism includes a magnet for attracting the mask toward at least a corner portion of the film forming substrate.

Abstract: In an organic electroluminescence display device which includes: a display region DR in which a plurality of pixels are arranged; and a power source part CC which is arranged outside the display region, each of the plurality of pixels includes: a lower electrode An; a light emitting layer stacked above the lower electrode; and an upper electrode which includes a thin silver film AG and is formed by a layer shared in common by other pixels above the light emitting layer, the upper electrode extends to the power source part for electrically connection, the thin silver film has a portion arranged between the display region and the power source part, and a background layer containing an electron pair donor is arranged as a background of at least a portion of the thin silver film between the display region and the power source part.

Abstract: A milling apparatus is provided in which temperature rise of a treatment-object in milling treatment, especially of the substrate thereof, is prevented. In the apparatus, ionization mechanism 2 comprises casing 20d having an opening at the center portion of the face thereof opposing to substrate 5 held by substrate holder 6; a filament is placed at the position where the straight line drawn from the filament to substrate 5 is intercepted by casing 20d; and electromagnets 31, 32 are provided around ionization mechanism 2 for generating a magnetic field to produce magnetic lines extending through opening 20j to substrate 5.

Abstract: Sputtering particles emitted from a target are ionized by the Penning ionization process. And the sputtering particles ionized are caused to fly in the direction of the substrate by a magnetic field formed by ambipolar diffusion due to a magnetic field generating means without scattering the particles to deposit the particles on the substrate. The partial pressure of a sputtering discharge gas in a discharge space is set to 1.3 Pa or less and a distance from the target to an ionization space is within twice the mean free path of the partial pressure of the sputtering discharge gas.

Abstract: A method for ionization film formation to form a deposited film by ionizing vaporized particles with an ionization mechanism of the hot-cathode system and injecting the ionized particles into a substrate is provided. The method includes the step of introducing He gas inside the ionization mechanism.

Abstract: A method for ionization film formation to form a deposited film by ionizing vaporized particles with an ionization mechanism of the hot-cathode system and injecting the ionized particles into a substrate is provided. The method includes the step of introducing He gas inside the ionization mechanism.

Abstract: In a deposited-film-forming method of forming a compound film on a substrate by a chemical reaction between the particles of a raw material emitted from a raw material particle generation source opposed to the substrate in the direction of the substrate, and the atoms of a reactive gas supplied to a flying space of the particles of the raw material, the space being interposed between the substrate and the raw material particle source, the atoms of a rare gas in an excited state are supplied to the flying space of the particles of the raw material, in order to ionize the atoms of the reactive gas and the particles of the raw material and thereby induce the chemical reaction.

Abstract: A milling apparatus is provided in which temperature rise of a treatment-object in milling treatment, especially of the substrate thereof, is prevented. In the apparatus, ionization mechanism 2 comprises casing 20d having an opening at the center portion of the face thereof opposing to substrate 5 held by substrate holder 6; a filament is placed at the position where the straight line drawn from the filament to substrate 5 is intercepted by casing 20d; and electromagnets 31, 32 are provided around ionization mechanism 2 for generating a magnetic field to produce magnetic lines extending through opening 20j to substrate 5.

Abstract: Sputtering particles emitted from a target are ionized by the Penning ionization process. And the sputtering particles ionized are caused to fly in the direction of the substrate by a magnetic field formed by ambipolar diffusion due to a magnetic field generating means without scattering the particles to deposit the particles on the substrate. The partial pressure of a sputtering discharge gas in a discharge space is set to 1.3 Pa or less and a distance from the target to an ionization space is within twice the mean free path of the partial pressure of the sputtering discharge gas.

Abstract: In a deposited-film-forming method of forming a compound film on a substrate by a chemical reaction between the particles of a raw material emitted from a raw material particle generation source opposed to the substrate in the direction of the substrate, and the atoms of a reactive gas supplied to a flying space of the particles of the raw material, the space being interposed between the substrate and the raw material particle source, the atoms of a rare gas in an excited state are supplied to the flying space of the particles of the raw material, in order to ionize the atoms of the reactive gas and the particles of the raw material and thereby induce the chemical reaction.

Abstract: A method for ionization film formation to form a deposited film by ionizing vaporized particles with an ionization mechanism of the hot-cathode system and injecting the ionized particles into a substrate is provided. The method includes the step of introducing He gas inside the ionization mechanism.

Abstract: The present invention provides a film forming method comprising the steps of ionizing sputtering particles and applying a periodically changing voltage to an electrode near a substrate, wherein a time for applying a voltage equal to or higher than an intermediate value between maximum and minimum values of the periodically changing voltage is shorter than a time for applying a voltage equal to or less than the intermediate value, and a film forming apparatus for carrying out the above method.